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M50LPW040K1T

STMicroelectronics

M50LPW040K1T by STMicroelectronics

M50LPW040K1T from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an access time of 11 ns and a temperature range of 0 °C to 70 °C. It’s ideal for applications requiring fast data storage in compact devices. Its quad terminal design ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,931 parts In-Stock

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3,931

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Anansix

USA . 1,624 parts In-Stock

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1,624

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Digiode

USA . 487 parts In-Stock

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487

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IDEA Electronic Components Group

UK . 165 parts In-Stock

1+ parts

$4.782

100+ parts

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1k+ parts

$4.304

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165

$4.782

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$4.304

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MKK Technologies

India . 113 parts In-Stock

1+ parts

$8.993

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113

$8.993

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DigiPath Technology Company

USA . 113 parts In-Stock

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$8.993

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113

$8.993

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Corphita

USA . 4,017 parts In-Stock

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4,017

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Parana Technologies

USA . 2,131 parts In-Stock

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$5.718

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2,131

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$5.718

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Overview

Unlock the power of seamless data storage with the M50LPW040K1T from STMicroelectronics, a leader in innovative technology. This high-quality NOR flash memory promises reliability and efficiency for your applications, from consumer electronics to industrial systems. With its compact design and low power consumption, it ensures optimal performance while saving valuable board space. Elevate your projects with trusted excellence and experience the benefits of advanced memory solutions that drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection against environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into various PCBs, enhancing application flexibility.

Package Shape: RECTANGULAR

The rectangular shape is standard for flash memory products, facilitating easier placement on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer speeds, making it suitable for applications demanding high performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage of 3.3V, ensuring compatibility with most modern electronic systems.

Power Supplies (V): 3.3

Utilizes a common power supply voltage, simplifying design and reducing power supply complexity.

No. of Terminals: 32

With 32 terminals, it offers a wide range of connections, making it versatile for different applications.

Package Style (Meter): CHIP CARRIER

The chip carrier style is conducive to effective heat dissipation and provides reliable connections.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C allows for use in various environments without overheating.

Organization: 512KX8

This organization means the memory is well-structured for efficient data access and storage.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C allows it to function in a wide range of conditions.

No. of Sectors/Size: 8

Having 8 sectors enables improved management of data storage and retrieval.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides excellent solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: QUAD

Quad terminal position allows for better signal integrity and reduces the risk of data loss during transfers.

Maximum Seated Height: 3.56 mm

A low seated height allows for a more compact design in devices, saving space in housings.

Width: 11.43 mm

This width is suitable for various applications, providing a balance between size and performance.

Minimum Supply Voltage (Vsup): 3 V

Ability to operate down to 3V enhances flexibility in battery-powered applications.

Type: NOR TYPE

NOR type offers fast read access times and is excellent for code storage applications.

Length: 13.97 mm

A compact length helps in optimizing board space while maintaining performance.

Programming Voltage (V): 3

Using a 3V programming voltage simplifies integration and reduces the power demand during programming operations.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable operation in typical consumer electronics environments.

Technology: CMOS

CMOS technology improves power efficiency and performance, making it ideal for low-power applications.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data access and transfer, suitable for high-speed applications.

Terminal Form: J BEND

J bend terminals enhance soldering and mounting capabilities, ensuring robust connections.

Sector Size (Words): 64K

The sector size of 64K words allows efficient block-level data management, improving performance during write operations.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA indicates moderate power consumption, making it suitable for portable devices.

No. of Words: 524288 words

Offering 524,288 words provides substantial storage capacity for various applications.

Memory Width: 8

An 8-bit memory width strikes a balance between performance and complexity for many applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm provides sufficient space for easy soldering and connectivity.

No. of Words Code: 512K

A total of 512K words provides ample space for data storage, catering to applications with moderate memory needs.

Command User Interface: YES

Having a command user interface makes it user-friendly and easier to integrate into existing systems.

Maximum Supply Voltage (Vsup): 3.6 V

Operating up to 3.6V gives flexibility in power supply design and can accommodate slight voltage fluctuations.

Memory Density: 4194304 bit

With a density of 4194304 bits, it offers large storage capacity, making it suitable for data-intensive applications.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage, retaining data even when power is lost.

Maximum Standby Current: 0.0001 Amp

A very low standby current is ideal for battery-powered devices, prolonging the battery life.

Maximum Access Time: 11 ns

A maximum access time of 11 ns ensures fast retrieval of data, enhancing system performance.

Technical Specifications

Flash Memory M50LPW040K1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50LPW040K1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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