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M50LPW040N1

STMicroelectronics

M50LPW040N1 by STMicroelectronics

M50LPW040N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and a compact SOIC package. Ideal for embedded applications, it operates in synchronous mode with 512Kx8 organization. Its commercial grade ensures reliability in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,590 parts In-Stock

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3,590

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Digiode

USA . 2,446 parts In-Stock

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Anansix

USA . 1,997 parts In-Stock

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1,997

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Lakeland Logistics Inc

USA . 31 parts In-Stock

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Bristol Electronics

USA . 31 parts In-Stock

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Prism Electronics

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 92 parts In-Stock

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$1.878

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$1.690

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92

$1.878

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$1.690

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MKK Technologies

India . 791 parts In-Stock

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$3.531

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DigiPath Technology Company

USA . 791 parts In-Stock

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$3.531

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$3.531

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Parana Technologies

USA . 1,734 parts In-Stock

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$2.245

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Corphita

USA . 1,685 parts In-Stock

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Perfect Parts

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Overview

Elevate your designs with the M50LPW040N1 from STMicroelectronics, a leader in innovative memory solutions. This compact flash memory offers exceptional performance and reliability, perfect for applications in IoT devices, automotive systems, and consumer electronics. With its sleek, low-profile design and synchronous operation, enjoy faster access times and lower power consumption. Trust in STMicroelectronics for quality that drives your projects to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials enhances durability and resistance to environmental factors, making it a reliable choice for various applications.

Surface Mount: YES

Surface mount technology allows for compact circuit design, facilitating easier integration into modern electronics.

Package Shape: RECTANGULAR

A rectangular shape optimizes board space, accommodating potentially denser layouts in electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfer rates, enhancing overall performance for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common supply voltage of 3.3 V is compatible with most electronic designs, ensuring broad usability.

Power Supplies (V): 3.3

The requirement for a 3.3 V power supply is typical for modern digital circuits, simplifying the design process.

No. of Terminals: 40

Forty terminals allow for ample connections, supporting more complex functionality and data transfer requirements.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile design contributes to space-saving solutions, making it perfect for compact electronic devices.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in various environments, suitable for commercial applications.

Organization: 512KX8

This organization allows for effective memory management, making it suitable for a variety of applications that require organized data storage.

Minimum Operating Temperature: 0 °C

Operating from 0 °C ensures functionality in standard environmental conditions, catering to a wide range of applications.

No. of Sectors/Size: 8

Having 8 sectors allows for efficient data handling and organization, improving read/write performance for different application demands.

Terminal Finish: TIN LEAD

The tin-lead finish provides good solderability and reliability in electronic assemblies.

Terminal Position: DUAL

Dual terminal positioning aids in versatile mounting and connection options, catering to different design preferences.

Maximum Seated Height: 1.2 mm

The low profile of 1.2 mm minimizes space requirements and enhances design versatility.

Width: 10 mm

A width of 10 mm is manageable for compact PCB layouts, allowing for more design flexibility in smaller devices.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3 V is practical for most modern circuits, ensuring a wide range of compatibility.

Type: NOR TYPE

NOR type architecture is known for faster read speeds, making it ideal for applications needing quick access to stored data.

Length: 18.4 mm

The compact length of 18.4 mm fits well in space-constrained applications, providing versatility in designs.

Programming Voltage (V): 3

A programming voltage of 3 V keeps power requirements low while ensuring effective programming performance.

Temperature Grade: COMMERCIAL

Classified as commercial grade, this product is suitable for general electronic use, ensuring it meets average operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making it energy-efficient for portable devices.

Parallel or Serial: PARALLEL

The parallel data transfer allows for higher throughput, which is essential for applications demanding fast performance.

Terminal Form: GULL WING

Gull wing terminals facilitate reliable connections and ease of soldering to PCB, enhancing manufacturing efficiency.

Sector Size (Words): 64K

Sector sizes of 64K allow for manageable data segments, providing efficiency in data management strategies.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, the product is energy-efficient while maintaining adequate performance levels.

No. of Words: 524288 words

The substantial word count offers ample storage for various applications, from simple data logging to complex embedded systems.

Memory Width: 8

An 8-bit memory width is standard in many applications, allowing for compatibility with a wide range of microcontrollers.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch is advantageous for high-density designs, allowing tighter spacing in compact systems.

No. of Words Code: 512K

This coding provides clear identification of the memory capacity, making it easy to understand the resource availability.

Command User Interface: YES

An available command user interface simplifies control and integration into various systems, enhancing usability.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V provides flexibility in circuit design and ensures compatibility with a range of power sources.

Memory Density: 4194304 bit

High memory density offers more data storage capacity in a compact form, enabling advanced functionalities in devices.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage options, perfect for applications needing persistent data retention.

Maximum Standby Current: 0.0001 Amp

With a very low standby current, this product is highly efficient, making it ideal for battery-powered applications.

Maximum Access Time: 11 ns

The fast access time of 11 ns allows for quick data retrieval, boosting performance in applications requiring rapid responses.

Technical Specifications

Flash Memory M50LPW040N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50LPW040N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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