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M50LPW002K5T

STMicroelectronics

M50LPW002K5T by STMicroelectronics

M50LPW002K5T by STMicroelectronics is a 256Kx8 NOR Flash memory with a 3.3V supply, ideal for embedded applications. It features a max access time of 11 ns and operates in synchronous mode, ensuring fast data retrieval. With a compact chip carrier design, it suits space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,612 parts In-Stock

1+ parts

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1k+ parts

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4,612

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Digiode

USA . 3,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,809

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Anansix

USA . 599 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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599

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2 parts In-Stock

1+ parts

$1.871

100+ parts

-

1k+ parts

$1.684

10k+ parts

-

2

$1.871

-

$1.684

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MKK Technologies

India . 538 parts In-Stock

1+ parts

$3.519

100+ parts

-

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538

$3.519

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DigiPath Technology Company

USA . 538 parts In-Stock

1+ parts

$3.519

100+ parts

-

1k+ parts

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538

$3.519

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-

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Corphita

USA . 1,523 parts In-Stock

1+ parts

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1,523

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Parana Technologies

USA . 327 parts In-Stock

1+ parts

-

100+ parts

$2.237

1k+ parts

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10k+ parts

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327

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$2.237

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Overview

Unlock unparalleled performance with the M50LPW002K5T Flash Memory from STMicroelectronics, a trusted leader in innovative technology. Designed for reliability and efficiency, this memory solution excels in applications demanding high speed and low power consumption, making it perfect for consumer electronics, automotive systems, and industrial devices. Experience superior quality and support, driving your projects to success with a product backed by industry expertise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of space on PCBs, enhancing overall product performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into circuit designs, providing flexibility in layout options.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, improving overall system performance in applications requiring speedy access.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V indicates compatibility with a wide range of modern digital systems, ensuring energy-efficient performance.

Power Supplies (V): 3.3

Utilizing a single power supply voltage of 3.3V simplifies power management in circuits.

No. of Terminals: 32

A 32-terminal configuration provides ample connection points for versatile applications, enhancing connectivity and performance.

Package Style (Meter): CHIP CARRIER

Chip carrier package style is designed for high-density applications, supporting efficient use of space on circuit boards.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this flash memory can operate reliably in high-temperature environments.

Organization: 256KX8

The 256Kx8 organization supports larger data storage and efficient memory management, making it suitable for complex applications.

Minimum Operating Temperature: -20 °C

The ability to function at -20 °C expands usability in diverse environments, including colder climates.

No. of Sectors/Size: 1,2,1,3

Flexibility in sector size enhances the memory’s ability to handle different data types and sizes efficiently.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good solderability and reliable electrical connections, contributing to overall product lifespan.

Terminal Position: QUAD

Quad terminal positioning allows for better signal integrity and layout flexibility, especially in high-speed applications.

Maximum Seated Height: 3.56 mm

A low profile of 3.56 mm assists in saving space, allowing for compact device designs.

Width: 11.455 mm

The compact width makes it suitable for applications where space is a premium.

Minimum Supply Voltage (Vsup): 3 V

Operating at a minimum voltage of 3V enhances versatility and compatibility with various power sources.

Type: NOR TYPE

NOR flash memory is ideal for random access and fast read times, making it valuable for applications needing quick data retrieval.

Length: 13.995 mm

A moderate length allows for various design configurations within compact electronic devices.

Programming Voltage (V): 3

A programming voltage of 3V aligns with standard operating conditions, facilitating ease of integration.

Technology: CMOS

CMOS technology provides low power consumption and high performance, making it a good choice for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel architecture allows for faster data access and transfer rates, enhancing system performance.

Terminal Form: J BEND

J bend terminals offer secure connections and are suitable for various mounting styles.

Sector Size (Words): 16K,8K,32K,64K

Diverse sector sizes enable optimized data management and flexibility for different application needs.

Maximum Supply Current: 60 mA

A maximum supply current of 60mA ensures sufficient power availability for demanding operations while maintaining efficient power consumption.

No. of Words: 262144 words

With 262144 words available, this memory solution provides a substantial amount of storage for various applications.

Memory Width: 8

An 8-bit memory width allows for efficient data organization and processing, essential for many digital applications.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27 mm offers compatibility with standard PCB design practices for easy integration.

No. of Words Code: 256K

Providing a 256K word code enhances data storage capacity, suitable for applications requiring significant memory.

Command User Interface: YES

A command user interface allows for straightforward interaction with the memory, making it easier to implement in various systems.

Ready or Busy: YES

The ready or busy signal facilitates better management of read/write operations, optimizing performance in time-critical applications.

Maximum Supply Voltage (Vsup): 3.6 V

The capability to handle up to 3.6V ensures reliable performance under varying conditions and power fluctuations.

Boot Block: TOP

A top boot block design allows for easier firmware updates and quick access to boot code, beneficial for many embedded applications.

Memory Density: 2097152 bit

With a memory density of 2097152 bits, this product is capable of storing large amounts of data, catering to modern application demands.

Memory IC Type: FLASH

As a flash memory IC type, it offers non-volatile storage and faster access times, making it ideal for applications like smartphones and automotive electronics.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current makes this product energy-efficient, helping to extend battery life in portable devices.

Maximum Access Time: 11 ns

A fast access time of 11 ns enhances the speed of data retrieval and processing, critical for performance in high-speed applications.

Technical Specifications

Flash Memory M50LPW002K5T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Additional Features:

TOP BOOT BLOCK

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.995 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.455 mm

Trade Compliance

M50LPW002K5T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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