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M29F400BT70M6E

STMicroelectronics

M29F400BT70M6E by STMicroelectronics

M29F400BT70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SO package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,108 parts In-Stock

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Vyrian

USA . 1,937 parts In-Stock

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Anansix

USA . 632 parts In-Stock

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Maverick Electronics, Inc.

USA . 160 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,216 parts In-Stock

1+ parts

$3.710

100+ parts

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$3.339

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$3.710

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$3.339

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MKK Technologies

India . 475 parts In-Stock

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$6.977

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475

$6.977

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DigiPath Technology Company

USA . 475 parts In-Stock

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$6.977

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475

$6.977

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AZTECH Wire

Italy . 768 parts In-Stock

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$13.690

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768

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Corphita

USA . 4,469 parts In-Stock

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Parana Technologies

USA . 1,097 parts In-Stock

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$4.436

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$4.436

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Kepictronics

USA . 667 parts In-Stock

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Microchip USA

USA . 354 parts In-Stock

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Overview

Elevate your designs with the M29F400BT70M6E flash memory from STMicroelectronics, a trusted leader in semiconductor innovation. This versatile NOR flash memory delivers exceptional durability and performance, making it perfect for industrial applications. With a robust temperature range and efficient power management, it ensures reliability in even the most demanding environments. Experience enhanced data storage solutions that empower your projects and drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of PCB space.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into various circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation improves performance in applications requiring fast data access.

Nominal Supply Voltage / Vsup: 5 V

Standard nominal voltage ensures compatibility with a wide range of electronic systems.

Power Supplies (V): 5

Single 5V supply simplifies power management and reduces design complexity.

No. of Terminals: 44

A higher number of terminals allows for increased connections and greater functionality.

Package Style (Meter): SMALL OUTLINE

Small outline package style is ideal for space-constrained applications.

Alternate Memory Width: 8

Supports 8-bit data width, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

High temperature tolerance makes this product suitable for industrial environments.

Organization: 256KX16

Organizational structure provides efficient data handling and retrieval capabilities.

Minimum Operating Temperature: -40 °C

Operational at low temperatures allows for diverse application in extreme environments.

No. of Sectors/Size: 1,2,1,7

Flexible sector architecture ensures efficient memory management and data organization.

Terminal Finish: TIN/NICKEL PALLADIUM GOLD

High-quality terminal finish enhances connectivity and reduces corrosion, improving reliability.

Terminal Position: DUAL

Dual terminal position allows for versatile PCB layout designs.

Maximum Seated Height: 2.62 mm

Compact height enables use in low-profile applications.

Width: 13.3 mm

Narrow width is suitable for high-density designs.

Minimum Supply Voltage (Vsup): 4.5 V

Operational at lower voltage allows flexibility in power supply design.

Type: NOR TYPE

NOR type is ideal for fast random access, making it suitable for code storage.

Length: 28.2 mm

Compact length promotes efficient use of board space in electronic applications.

Programming Voltage (V): 5

Standard programming voltage simplifies design and reduces complexity.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring reliability in demanding environments.

Technology: CMOS

CMOS technology provides low power consumption, enhancing overall efficiency.

Parallel or Serial: PARALLEL

Parallel operation allows for faster data retrieval, improving performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and help to ensure strong electrical connections.

Sector Size (Words): 16K,8K,32K,64K

Various sector sizes allow for flexibility in memory allocation and usage.

Maximum Supply Current: 20 mA

Low current consumption contributes to efficient power management in applications.

No. of Words: 262144 words

Ample word count ensures sufficient memory for complex applications.

Toggle Bit: YES

Toggle bit feature simplifies the interface for memory operations.

Memory Width: 16

The 16-bit memory width provides a good balance between performance and data capacity.

Terminal Pitch: 1.27 mm

Standard terminal pitch enhances compatibility with various PCB designs.

No. of Words Code: 256K

256K word code supports sizable applications, ensuring ample data storage capability.

Command User Interface: YES

User-friendly command interface simplifies interaction and enhances usability.

Ready or Busy: YES

The ready/busy feature facilitates synchronization between the memory and host.

Maximum Supply Voltage (Vsup): 5.5 V

Supports a wide supply voltage range, allowing for flexibility in design.

Endurance: 100000 Write/Erase Cycles

High endurance guarantees long-term usage, making it suitable for frequent write applications.

Boot Block: TOP

Top boot block configuration enhances security for firmware storage.

Memory Density: 4194304 bit

High memory density facilitates the storage of large amounts of data in a compact footprint.

Memory IC Type: FLASH

Flash memory type offers non-volatile storage, important for critical data retention.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current contributes to overall energy efficiency in hardware applications.

Maximum Access Time: 70 ns

Fast access time ensures swift memory operations, enhancing overall system performance.

Data Polling: YES

Data polling capability allows for efficient status checking of the memory operations.

Technical Specifications

Flash Memory M29F400BT70M6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3/e4

Length:

28.2 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,7

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

2.62 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

NOR TYPE

Width:

13.3 mm

Trade Compliance

M29F400BT70M6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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