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M29F800FT55N3E2

Micron Technology

M29F800FT55N3E2 by Micron Technology

Micron Technology's M29F800FT55N3E2 is a 512KX16 NOR flash memory with 8388608 bit density. Operating at 5V, it offers fast access time of 55ns and low standby current of 0.00012A. Ideal for automotive applications due to AEC-Q100 screening, it features common flash interface and supports parallel programming.

Median Price

$3.855

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 576 parts In-Stock

1+ parts

$4.760

100+ parts

$4.010

1k+ parts

$3.850

10k+ parts

$3.770

576

$4.760

$4.010

$3.850

$3.770

Future Electronics

Canada . 32 parts In-Stock

1+ parts

-

100+ parts

$2.950

1k+ parts

$2.850

10k+ parts

-

32

-

$2.950

$2.850

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 673 parts In-Stock

1+ parts

$3.990

100+ parts

-

1k+ parts

-

10k+ parts

-

673

$3.990

-

-

-

TME

Poland . 56 parts In-Stock

1+ parts

$4.250

100+ parts

$2.660

1k+ parts

-

10k+ parts

-

56

$4.250

$2.660

-

-

Kruse Electronics AG

Switzerland . 46,556 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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46,556

-

-

-

-

Kruse

Germany . 46,556 parts In-Stock

1+ parts

-

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-

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46,556

-

-

-

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ARCO, INC.

USA . 46,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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46,500

-

-

-

-

Chip Stock

USA . 11,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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11,800

-

-

-

-

Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,000

-

-

-

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Vyrian

USA . 2,136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,136

-

-

-

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Nova Conductors

Japan . 84 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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84

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 335 parts In-Stock

1+ parts

$2.617

100+ parts

-

1k+ parts

-

10k+ parts

-

335

$2.617

-

-

-

Ampacity Inc.

Singapore . 941 parts In-Stock

1+ parts

$3.330

100+ parts

-

1k+ parts

-

10k+ parts

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941

$3.330

-

-

-

Corphita

USA . 1,314 parts In-Stock

1+ parts

$3.780

100+ parts

-

1k+ parts

-

10k+ parts

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1,314

$3.780

-

-

-

Component Stockers USA

USA . 4,222 parts In-Stock

1+ parts

$4.050

100+ parts

$3.210

1k+ parts

$2.930

10k+ parts

-

4,222

$4.050

$3.210

$2.930

-

Corohmni

South Africa . 24 parts In-Stock

1+ parts

$4.273

100+ parts

-

1k+ parts

-

10k+ parts

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24

$4.273

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 8,772 parts In-Stock

1+ parts

-

100+ parts

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8,772

-

-

-

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iodParts Technologies Inc.

India . 7,845 parts In-Stock

1+ parts

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7,845

-

-

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Continental Prestige Electronics

USA . 6,646 parts In-Stock

1+ parts

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100+ parts

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6,646

-

-

-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,000

-

-

-

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Argo Parts USA

USA . 451 parts In-Stock

1+ parts

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451

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Aranea Global

USA . 50 parts In-Stock

1+ parts

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100+ parts

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50

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Perfect Parts

USA . 34 parts In-Stock

1+ parts

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34

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Overview

Discover the power of reliable and efficient flash memory with the M29F800FT55N3E2 by Micron Technology. As a leader in the industry, Micron Technology ensures top-quality products that exceed expectations. Ideal for automotive applications, this NOR type memory offers fast access times and low standby current, making it perfect for critical systems. Experience seamless performance and peace of mind with the M29F800FT55N3E2, providing exceptional value and unmatched reliability for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the flash memory, ensuring a longer lifespan.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources, making integration into various systems straightforward.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures reliable operation in harsh environments, making this flash memory suitable for automotive applications.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile storage capabilities, ideal for storing data without the need for continuous power.

Technical Specifications

Flash Memory M29F800FT55N3E2 attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

55 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800FT55N3E2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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