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M29F160FB5AN6F2

Micron Technology

M29F160FB5AN6F2 by Micron Technology

Micron Technology's M29F160FB5AN6F2 is a NOR flash memory with 1MX16 organization, operating at 5V. It features asynchronous mode, AEC-Q100 screening, and industrial temperature grade. With fast access time of 55ns and toggle bit support, it's ideal for automotive electronics, industrial applications, and embedded systems requiring reliable non-volatile storage.

Median Price

$9.150

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,779 parts In-Stock

1+ parts

$4.290

100+ parts

$3.390

1k+ parts

$3.110

10k+ parts

$2.930

2,779

$4.290

$3.390

$3.110

$2.930

Arrow

USA . 177,000 parts In-Stock

1+ parts

$11.550

100+ parts

-

1k+ parts

$6.270

10k+ parts

$5.420

177,000

$11.550

-

$6.270

$5.420

Verical

USA . 337 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$9.150

10k+ parts

-

337

-

-

$9.150

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,392 parts In-Stock

1+ parts

$4.076

100+ parts

-

1k+ parts

-

10k+ parts

-

1,392

$4.076

-

-

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Vyrian

USA . 2,017 parts In-Stock

1+ parts

$4.290

100+ parts

-

1k+ parts

-

10k+ parts

-

2,017

$4.290

-

-

-

Kruse

Germany . 60,000 parts In-Stock

1+ parts

-

100+ parts

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60,000

-

-

-

-

Kruse Electronics AG

Switzerland . 37,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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37,500

-

-

-

-

Semi Source

USA . 37,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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37,500

-

-

-

-

Chip Stock

USA . 17,237 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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17,237

-

-

-

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North Shore Components

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,000

-

-

-

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Semtec, LLC

USA . 30 parts In-Stock

1+ parts

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30

-

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Cyclops Electronics Ltd

UK . 19 parts In-Stock

1+ parts

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19

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

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15

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 89,453 parts In-Stock

1+ parts

$3.650

100+ parts

-

1k+ parts

-

10k+ parts

-

89,453

$3.650

-

-

-

Corphita

USA . 1,325 parts In-Stock

1+ parts

$3.861

100+ parts

-

1k+ parts

-

10k+ parts

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1,325

$3.861

-

-

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Component Stockers USA

USA . 2,307 parts In-Stock

1+ parts

$4.160

100+ parts

$3.290

1k+ parts

$3.560

10k+ parts

$2.570

2,307

$4.160

$3.290

$3.560

$2.570

Kepictronics

USA . 185,300 parts In-Stock

1+ parts

-

100+ parts

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185,300

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-

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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25,000

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 24,760 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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24,760

-

-

-

-

Sternenhof Electronics (Excess)

Switzerland . 18,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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18,000

-

-

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Argo Parts USA

USA . 5,313 parts In-Stock

1+ parts

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5,313

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A-Z Elektronik GmbH

Germany . 2,298 parts In-Stock

1+ parts

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100+ parts

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2,298

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-

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Continental Prestige Electronics

USA . 1,702 parts In-Stock

1+ parts

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1,702

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-

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Perfect Parts

USA . 1,680 parts In-Stock

1+ parts

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100+ parts

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1,680

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-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

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-

Overview

Upgrade your devices with the M29F160FB5AN6F2 Flash Memory from Micron Technology. With top-notch quality and reliability, this flash memory offers fast access times and low power consumption, perfect for industrial applications. Experience seamless operation and store all your data efficiently with this NOR type memory. Say goodbye to slow loading times and hello to increased performance. Trust Micron Technology to deliver cutting-edge technology that meets all your storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the flash memory suitable for rugged environments.

No. of Words: 1048576 words

With a large number of words, this flash memory offers ample storage capacity for various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows this flash memory to function reliably in a wide range of environments.

Memory Density: 16777216 bit

The high memory density enables this flash memory to store a large amount of data in a compact form factor.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the flash memory efficient and reliable.

Technical Specifications

Flash Memory M29F160FB5AN6F2 attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

55 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,31

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F160FB5AN6F2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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