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M29F800FB5AN6E2

Micron Technology

M29F800FB5AN6E2 by Micron Technology

Micron Technology's M29F800FB5AN6E2 is a NOR flash memory with 512KX16 organization, operating at 5V. It features asynchronous mode, AEC-Q100 screening level, and industrial temperature grade. With 524288 words and toggle bit support, it is ideal for applications requiring fast access times and reliable data storage in automotive electronics.

Median Price

$5.900

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 646 parts In-Stock

1+ parts

$4.760

100+ parts

$3.970

1k+ parts

$3.850

10k+ parts

$3.750

646

$4.760

$3.970

$3.850

$3.750

DigiKey

USA . 2,408 parts In-Stock

1+ parts

$7.040

100+ parts

$6.056

1k+ parts

$5.685

10k+ parts

$5.542

2,408

$7.040

$6.056

$5.685

$5.542

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 91 parts In-Stock

1+ parts

$3.188

100+ parts

-

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91

$3.188

-

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TME

Poland . 425 parts In-Stock

1+ parts

$4.030

100+ parts

$2.760

1k+ parts

-

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425

$4.030

$2.760

-

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Digiode

USA . 483 parts In-Stock

1+ parts

$4.104

100+ parts

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483

$4.104

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Kruse

Germany . 123,168 parts In-Stock

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Kruse Electronics AG

Switzerland . 114,624 parts In-Stock

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ARCO, INC.

USA . 114,000 parts In-Stock

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114,000

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Chip Stock

USA . 48,954 parts In-Stock

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48,954

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Flip Electronics

USA . 14,400 parts In-Stock

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ComSIT Distribution GmbH

Germany . 647 parts In-Stock

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647

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Vyrian

USA . 485 parts In-Stock

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485

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NAC Semi

USA . 480 parts In-Stock

1+ parts

-

100+ parts

$3.920

1k+ parts

$3.640

10k+ parts

-

480

-

$3.920

$3.640

-

Bristol Electronics

USA . 458 parts In-Stock

1+ parts

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458

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Goldney Electronics S.L.

Spain . 430 parts In-Stock

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430

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Dan-Mar Components

USA . 253 parts In-Stock

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253

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Speed Components Ltd

Israel . 12 parts In-Stock

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12

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,546 parts In-Stock

1+ parts

$3.188

100+ parts

-

1k+ parts

-

10k+ parts

$3.125

4,546

$3.188

-

-

$3.125

Argo Parts USA

USA . 4,082 parts In-Stock

1+ parts

$3.188

100+ parts

-

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4,082

$3.188

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Netroflash

USA . 50 parts In-Stock

1+ parts

$3.188

100+ parts

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50

$3.188

-

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Ampacity Inc.

Singapore . 793 parts In-Stock

1+ parts

$3.330

100+ parts

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793

$3.330

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Corphita

USA . 418 parts In-Stock

1+ parts

$3.888

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418

$3.888

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Aztec Data Supply Inc.

USA . 278 parts In-Stock

1+ parts

$5.346

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278

$5.346

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Andel Nordic

Denmark . 1,437 parts In-Stock

1+ parts

$5.909

100+ parts

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$5.673

10k+ parts

$5.673

1,437

$5.909

-

$5.673

$5.673

Component Stockers USA

USA . 3,042 parts In-Stock

1+ parts

$6.210

100+ parts

$4.920

1k+ parts

$4.490

10k+ parts

-

3,042

$6.210

$4.920

$4.490

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Perfect Parts

USA . 6,478 parts In-Stock

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6,478

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A-Z Elektronik GmbH

Germany . 5,219 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,479 parts In-Stock

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3,479

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Authorized Procurement Solutions

USA . 270 parts In-Stock

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270

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Legend Electronics Inc. (Excess)

USA . 270 parts In-Stock

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270

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Speed Components Ltd (Excess)

Israel . 270 parts In-Stock

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270

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Overview

Unleash the power of high-quality Flash Memory with the M29F800FB5AN6E2 by Micron Technology. This cutting-edge product offers unparalleled reliability and efficiency, perfect for a wide range of applications. With Micron's reputation for excellence in the industry, you can trust that this Flash Memory will exceed your expectations. Experience seamless performance, fast access times, and top-notch data reliability with this innovative solution. Upgrade your systems today with the M29F800FB5AN6E2 and discover the difference that Micron Technology can make for you.

Feature Benefit Bullets

Configuration: SEPARATE, 4 CHANNELS

Having 4 separate channels allows for individual control and isolation of different circuits, increasing flexibility and reliability.

Maximum Forward Current: 0.05 A

Can handle a maximum forward current of 0.05 A, suitable for a variety of low to medium power applications.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocoupler provides high speed and high isolation for signal transmission between different voltage potentials.

Maximum Operating Temperature: 100 °C

Can operate at temperatures up to 100°C, suitable for industrial applications.

Minimum Operating Temperature: -30 °C

Can operate at temperatures as low as -30°C, making it suitable for a wide range of environments.

Terminal Finish: TIN

TIN terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Maximum Power Dissipation: 0.15 W

With a maximum power dissipation of 0.15 W, it can handle heat dissipation efficiently during operation.

Minimum Current Transfer Ratio: 50%

A minimum current transfer ratio of 50% ensures accurate signal transmission between input and output.

Maximum Dark Current: 100 nA

Low dark current of 100 nA reduces power consumption and helps maintain signal integrity in off state.

No. of Elements: 4

Having 4 elements allows for multiple channels of signal isolation and control in a single package.

Packing Method: TUBE

Tube packaging provides protection during transportation and storage, ensuring product quality.

Minimum Collector-emitter Breakdown Voltage: 55 V

With a minimum breakdown voltage of 55 V, it can handle higher voltages without breakdown or damage.

Maximum Isolation Voltage: 5300 V

High isolation voltage of 5300 V ensures safe operation and protection against voltage spikes or surges.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation on PCBs, providing mechanical stability.

Maximum Forward Voltage: 1.3 V

Low maximum forward voltage of 1.3 V reduces power consumption and heat dissipation in the circuit.

Maximum On State Current: 0.05 A

Can handle a maximum on-state current of 0.05 A, suitable for switching and control applications.

Technical Specifications

Flash Memory M29F800FB5AN6E2 attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

55 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800FB5AN6E2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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