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M29F040B70N6

STMicroelectronics

M29F040B70N6 by STMicroelectronics

STMicroelectronics M29F040B70N6 is a 512Kx8 NOR Flash Memory with 100,000 Write/Erase Cycles. Operating at 5V, it offers fast access time of 70ns and industrial temperature grade. Ideal for applications requiring high endurance and reliable data storage in a compact small outline package.

Median Price

$1.174

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 45 parts In-Stock

1+ parts

$1.174

100+ parts

-

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45

$1.174

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R&J Components

USA . 4,720 parts In-Stock

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4,720

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Bristol Electronics

USA . 3,209 parts In-Stock

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3,209

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Dan-Mar Components

USA . 3,209 parts In-Stock

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3,209

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Digiode

USA . 2,883 parts In-Stock

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2,883

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Anansix

USA . 1,980 parts In-Stock

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1,980

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Vyrian

USA . 1,371 parts In-Stock

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1,371

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Cyclops Electronics Ltd

UK . 1,235 parts In-Stock

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1,235

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ACDS - Activité Composants Distribution Service

France . 936 parts In-Stock

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936

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Sternenhof Electronics

Switzerland . 936 parts In-Stock

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936

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ComSIT Distribution GmbH

Germany . 598 parts In-Stock

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598

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Avant Electronics Limited

UK . 597 parts In-Stock

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597

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Zilex Electronics Inc.

Canada . 146 parts In-Stock

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146

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Component Sense

UK . 122 parts In-Stock

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122

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Ashlea Components Ltd

UK . 39 parts In-Stock

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39

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Pegasus Components GmbH

Germany . 38 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,043 parts In-Stock

1+ parts

$1.174

100+ parts

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3,043

$1.174

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Netroflash

USA . 500 parts In-Stock

1+ parts

$1.174

100+ parts

-

1k+ parts

$1.115

10k+ parts

$1.092

500

$1.174

-

$1.115

$1.092

Continental Prestige Electronics

USA . 202 parts In-Stock

1+ parts

$1.174

100+ parts

-

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10k+ parts

$1.151

202

$1.174

-

-

$1.151

IDEA Electronic Components Group

UK . 643 parts In-Stock

1+ parts

$3.386

100+ parts

-

1k+ parts

$3.047

10k+ parts

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643

$3.386

-

$3.047

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MKK Technologies

India . 1,540 parts In-Stock

1+ parts

$6.366

100+ parts

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1,540

$6.366

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DigiPath Technology Company

USA . 1,540 parts In-Stock

1+ parts

$6.366

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1,540

$6.366

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AZTECH Wire

Italy . 601 parts In-Stock

1+ parts

$18.562

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601

$18.562

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Ampacity Inc.

Singapore . 1,628 parts In-Stock

1+ parts

$29.000

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$29.000

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Component Stockers USA

USA . 511 parts In-Stock

1+ parts

$99.990

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511

$99.990

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Authorized Procurement Solutions

USA . 100,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,541 parts In-Stock

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Corphita

USA . 4,619 parts In-Stock

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4,619

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Alle Elektronik GmbH

Germany . 3,694 parts In-Stock

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3,694

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Parana Technologies

USA . 1,316 parts In-Stock

1+ parts

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$4.048

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$4.048

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Kepictronics

USA . 1,235 parts In-Stock

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Assy Fe

Spain . 1,003 parts In-Stock

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Microchip USA

USA . 437 parts In-Stock

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437

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Overview

Unlock the power of reliable and high-quality Flash Memory with the M29F040B70N6 by STMicroelectronics. Built with precision and expertise, this product offers unparalleled value and benefits to customers in various applications. Whether you're looking for a dependable memory solution for industrial-grade electronics or robust data storage for your next project, this NOR type memory device delivers optimal performance and endurance with 100,000 write/erase cycles. Trust in STMicroelectronics for cutting-edge technology and innovative solutions that drive your success. Choose the M29F040B70N6 for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it suitable for a variety of environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and simultaneous read and write operations, enhancing performance and efficiency.

Nominal Supply Voltage / Vsup (V): 5

A stable supply voltage of 5V ensures consistent and reliable performance of the flash memory.

Endurance: 100000 Write/Erase Cycles

With a high endurance rating, this flash memory can withstand frequent read and write cycles, ensuring long-term reliability.

Memory Density: 4194304 bit

With a high memory density, this flash memory offers ample storage capacity for data-intensive applications.

Maximum Operating Temperature: 85 °C

The flash memory can operate efficiently in high-temperature environments, making it versatile for various applications.

Technical Specifications

Flash Memory M29F040B70N6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29F040B70N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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