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M29F800FT55N3E2

Alliance Memory

M29F800FT55N3E2 by Alliance Memory

FLASH; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS; Terminal Form: GULL WING;

Median Price

$3.855

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 576 parts In-Stock

1+ parts

$4.760

100+ parts

$4.010

1k+ parts

$3.850

10k+ parts

$3.770

576

$4.760

$4.010

$3.850

$3.770

Future Electronics

Canada . 32 parts In-Stock

1+ parts

-

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$2.950

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$2.850

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32

-

$2.950

$2.850

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Distributors (In-Stock)

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Digiode

USA . 673 parts In-Stock

1+ parts

$3.990

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673

$3.990

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TME

Poland . 56 parts In-Stock

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$4.250

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$2.660

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56

$4.250

$2.660

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Kruse Electronics AG

Switzerland . 46,556 parts In-Stock

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Kruse

Germany . 46,556 parts In-Stock

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ARCO, INC.

USA . 46,500 parts In-Stock

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46,500

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Chip Stock

USA . 11,800 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Vyrian

USA . 2,136 parts In-Stock

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Nova Conductors

Japan . 84 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 335 parts In-Stock

1+ parts

$2.617

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335

$2.617

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Ampacity Inc.

Singapore . 941 parts In-Stock

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$3.330

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941

$3.330

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Corphita

USA . 1,314 parts In-Stock

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$3.780

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$3.780

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Component Stockers USA

USA . 4,222 parts In-Stock

1+ parts

$4.050

100+ parts

$3.210

1k+ parts

$2.930

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4,222

$4.050

$3.210

$2.930

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Corohmni

South Africa . 24 parts In-Stock

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$4.273

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24

$4.273

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QUARKTWIN TECHNOLOGY LTD

USA . 8,772 parts In-Stock

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iodParts Technologies Inc.

India . 7,845 parts In-Stock

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Continental Prestige Electronics

USA . 6,646 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 451 parts In-Stock

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451

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Aranea Global

USA . 50 parts In-Stock

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Perfect Parts

USA . 34 parts In-Stock

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Technical Specifications

Flash Memory M29F800FT55N3E2 attributes and parameters. Explore more Flash Memory devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

5

Ready or Busy:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00012 Amp

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800FT55N3E2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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