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M29F200FT5AN6E2

Micron Technology

M29F200FT5AN6E2 by Micron Technology

Micron Technology's M29F200FT5AN6E2 is a NOR flash memory with 128KX16 organization, operating at 5V. It features asynchronous mode, AEC-Q100 screening level, and industrial temperature grade. Suitable for applications requiring fast access times and reliable data storage in automotive electronics or industrial control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 24,600 parts In-Stock

1+ parts

-

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24,600

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Dynamic Solutions

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

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900

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Digiode

USA . 847 parts In-Stock

1+ parts

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847

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Vyrian

USA . 320 parts In-Stock

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320

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 99 parts In-Stock

1+ parts

$1.338

100+ parts

-

1k+ parts

$1.284

10k+ parts

$1.284

99

$1.338

-

$1.284

$1.284

Ampacity Inc.

Singapore . 1,121 parts In-Stock

1+ parts

$8.000

100+ parts

-

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1,121

$8.000

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AZTECH Wire

Italy . 522 parts In-Stock

1+ parts

$18.715

100+ parts

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522

$18.715

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Component Stockers USA

USA . 292 parts In-Stock

1+ parts

$99.990

100+ parts

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292

$99.990

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RC Electronics

USA . 13,576 parts In-Stock

1+ parts

-

100+ parts

$1.830

1k+ parts

$1.720

10k+ parts

$1.690

13,576

-

$1.830

$1.720

$1.690

Continental Prestige Electronics

USA . 6,600 parts In-Stock

1+ parts

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6,600

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A-Z Elektronik GmbH

Germany . 4,566 parts In-Stock

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4,566

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Alle Elektronik GmbH

Germany . 3,044 parts In-Stock

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3,044

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Corphita

USA . 1,684 parts In-Stock

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1,684

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Perfect Parts

USA . 1,324 parts In-Stock

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1,324

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Kepictronics

USA . 1,152 parts In-Stock

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1,152

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Argo Parts USA

USA . 772 parts In-Stock

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772

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Experience reliable and high-quality performance with the Micron Technology M29F200FT5AN6E2 flash memory. As a leading manufacturer in the industry, Micron Technology delivers top-notch products for various applications. This flash memory offers exceptional value, benefits, and advantages to customers looking for a dependable solution. Whether you need it for industrial or automotive purposes, this product's features, and specifications make it a versatile and efficient choice. Trust Micron Technology to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions without performance degradation.

No. of Sectors/Size: 1,2,1,3

Having multiple sector sizes allows for efficient memory management and organization of data, enhancing overall performance.

Memory IC Type: FLASH

Being a flash memory IC ensures fast read and write speeds, making it ideal for applications that require quick access to data.

Technical Specifications

Flash Memory M29F200FT5AN6E2 attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

55 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00012 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F200FT5AN6E2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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