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M29F010B70N6E

STMicroelectronics

M29F010B70N6E by STMicroelectronics

M29F010B70N6E from STMicroelectronics is a NOR flash memory with 128K x 8 organization, operating at 5V. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 18,400 parts In-Stock

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Vyrian

USA . 4,640 parts In-Stock

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Anansix

USA . 2,096 parts In-Stock

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2,096

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Digiode

USA . 1,245 parts In-Stock

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1,245

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ComSIT Distribution GmbH

Germany . 240 parts In-Stock

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240

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ComSIT USA

USA . 240 parts In-Stock

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240

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ACDS - Activité Composants Distribution Service

France . 44 parts In-Stock

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44

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,245 parts In-Stock

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$1.969

100+ parts

-

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$1.772

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$1.969

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$1.772

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MKK Technologies

India . 668 parts In-Stock

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$3.702

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668

$3.702

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DigiPath Technology Company

USA . 668 parts In-Stock

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$3.702

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668

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AZTECH Wire

Italy . 619 parts In-Stock

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$19.920

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619

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Component Stockers USA

USA . 546 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 5,255 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,503 parts In-Stock

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Corphita

USA . 2,984 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Parana Technologies

USA . 1,372 parts In-Stock

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$2.354

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Microchip USA

USA . 314 parts In-Stock

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Overview

Unlock the potential of your designs with the M29F010B70N6E Flash Memory from STMicroelectronics, a leader in high-quality semiconductor solutions. Renowned for its reliability and performance, this NOR flash memory delivers exceptional endurance and speed, making it ideal for automotive and industrial applications where durability matters. Experience seamless integration with a compact design, empowering your innovations while ensuring longevity and efficiency. Elevate your projects with STMicroelectronics’ trusted technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures reliability and protection for the internal components.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape enables straightforward integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access without waiting on clock signals.

Nominal Supply Voltage / Vsup (V): 5V

5V operation is standard for many applications, making it compatible with a wide range of systems.

Power Supplies (V): 5V

Single voltage supply simplifies circuit design and power management within electronic systems.

No. of Terminals: 32

32 terminals provide ample connection points for data and control signals for effective operation.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile make it ideal for applications with space constraints.

Maximum Operating Temperature: 85 °C

Operating up to 85 °C ensures performance in various environmental conditions, suitable for industrial applications.

Organization: 128KX8

This organization provides a balance of storage capacity and data accessibility for efficient processing.

Minimum Operating Temperature: -40 °C

The wide temperature range (-40 °C to 85 °C) makes it suitable for extreme operating environments.

No. of Sectors/Size: 8

Multiple sectors allow for organized data management and efficient memory utilization.

Terminal Finish: TIN/TIN BISMUTH

This finish enhances solderability and long-term reliability of the connections.

Terminal Position: DUAL

Dual terminal positions enhance flexibility and integration in complex circuits.

Maximum Seated Height: 1.2 mm

Low height profile ensures compatibility with slimline designs and enhances device compactness.

Width: 8 mm

An 8mm width fits well in modern electronic assembly requirements, optimizing layout and performance.

Minimum Supply Voltage (Vsup): 4.5 V

Flexibility in operating voltage allows for various power supply options to suit different designs.

Type: NOR TYPE

NOR type flash memory provides faster read speeds, making it ideal for applications needing quick data access.

Length: 18.4 mm

The length fits standard PCB layouts while allowing for efficient memory organization.

Programming Voltage (V): 5

A standard programming voltage simplifies the development and interface with existing systems.

Temperature Grade: INDUSTRIAL

Industrial grade ensures durability and reliability in harsh operating conditions typical in manufacturing.

Technology: CMOS

CMOS technology provides lower power consumption and higher density memory storage capabilities.

Parallel or Serial: PARALLEL

Parallel processing allows for high-speed data transfer rates, improving overall performance.

Terminal Form: GULL WING

Gull wing terminals are easy to solder and provide excellent mechanical stability on PCBs.

Sector Size (Words): 16K

A 16K sector size optimizes performance for applications requiring frequent read/write cycles.

Maximum Supply Current: 20 mA

Low maximum supply current ensures energy efficiency, important for battery-powered devices.

No. of Words: 131072 words

With 131072 words, this memory provides substantial data storage capacity for various applications.

Toggle Bit: YES

Toggle bit functionality allows for easy detection of memory readiness, enhancing operational efficiency.

Memory Width: 8

An 8-bit memory width supports standard data formats, ensuring compatibility with common data buses.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch allows for dense packaging, suitable for modern compact devices.

No. of Words Code: 128K

Supports 128K commands, ensuring ample command interfaces for various applications.

Command User Interface: YES

A command interface allows for user-friendly control and operation within systems.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V provides a safe operating margin for variability in power supply.

Endurance: 100000 Write/Erase Cycles

High endurance ensures long-term reliability and performance in applications requiring frequent updates.

Memory Density: 1048576 bit

A dense memory capacity ensures considerable data storage in a compact package, perfect for modern applications.

Memory IC Type: FLASH

Flash memory technology provides non-volatile storage, retaining data even when power is lost.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current consumption enhances energy efficiency, crucial for portable devices.

Maximum Access Time: 70 ns

Fast access times improve read performance, ideal for applications that require quick data retrieval.

Data Polling: YES

Data polling functionality enhances efficiency in data checks, promoting reliable memory operations.

Technical Specifications

Flash Memory M29F010B70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29F010B70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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