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M29F010B45K6E

STMicroelectronics

M29F010B45K6E by STMicroelectronics

M29F010B45K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 14,500 parts In-Stock

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Vyrian

USA . 8,229 parts In-Stock

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Anansix

USA . 2,768 parts In-Stock

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2,768

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Digiode

USA . 604 parts In-Stock

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Sensible Micro Corp

USA . 21 parts In-Stock

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EMSNET

USA . 21 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,010 parts In-Stock

1+ parts

$2.117

100+ parts

-

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$1.905

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2,010

$2.117

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$1.905

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Modulus Dynamics

Lithuania . 2,500 parts In-Stock

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$3.224

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$3.224

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$3.224

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$3.224

$3.224

$3.224

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MKK Technologies

India . 1,748 parts In-Stock

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$3.981

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$3.981

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DigiPath Technology Company

USA . 1,748 parts In-Stock

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$3.981

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$3.981

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AZTECH Wire

Italy . 804 parts In-Stock

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$20.420

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804

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Component Stockers USA

USA . 237 parts In-Stock

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$99.990

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$99.990

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Kepictronics

USA . 3,700 parts In-Stock

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Corphita

USA . 3,222 parts In-Stock

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Parana Technologies

USA . 1,359 parts In-Stock

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$2.531

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$2.531

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Microchip USA

USA . 156 parts In-Stock

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Overview

Unlock endless possibilities with the M29F010B45K6E Flash Memory from STMicroelectronics, a leader in semiconductor innovation. Built for reliability and efficiency, this high-performance memory solution excels in diverse applications—from industrial automation to consumer electronics. Enjoy rapid access speeds and impressive endurance, ensuring your designs are both robust and future-proof. Elevate your projects with quality you can trust and performance that sets you apart!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and protection against environmental factors.

Surface Mount: YES

Surface mountability allows for compact designs and easier integration into modern circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for efficient use of space on PCBs and easy stacking in designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation offers faster memory access without the need for a clock signal, increasing efficiency.

Nominal Supply Voltage / Vsup (V): 5

A standardized supply voltage of 5V is widely compatible with various systems and simplifies design considerations.

Power Supplies (V): 5

Powering the device with a consistent 5V supply enhances stability and performance.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options for diverse applications, improving flexibility.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging allows for better heat dissipation, enhancing the durability and reliability of the memory.

Maximum Operating Temperature: 85 °C

Operating at high temperatures up to 85 °C makes this product suitable for industrial environments.

Organization: 128KX8

The organization of 128K x 8 bits offers efficient data structuring and access, suitable for various applications.

Minimum Operating Temperature: -40 °C

The capability to function at exceptionally low temperatures (-40 °C) ensures reliability in extreme conditions.

No. of Sectors/Size: 8

Having 8 sectors allows for enhanced data management and organization, making it easier to handle large volumes of data.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on terminals reduces oxidation and improves solderability, ensuring long-term reliability.

Terminal Position: QUAD

Quad terminal positioning enhances the connection stability and ensures efficient data transfer.

Maximum Seated Height: 3.56 mm

A low maximum seated height allows for compact designs, making it easier to fit into various spaces.

Width: 11.43 mm

A width of 11.43 mm is manageable for integration in various circuit layouts while optimizing space.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum voltage requirement of 4.5V ensures compatibility with a wide range of power supply systems.

Maximum Time At Peak Reflow Temperature (s): 40

Allowing up to 40 seconds at peak reflow temperature ensures efficient soldering without damaging the device.

Peak Reflow Temperature °C: 250

A peak reflow temperature of 250 °C ensures compatibility with modern manufacturing processes for easy assembly.

Type: NOR TYPE

NOR type technology offers fast read speeds and is well-suited for applications that require quick data access.

Length: 13.97 mm

The length of 13.97 mm is well-suited for various device layouts, ensuring flexibility in design.

Programming Voltage (V): 5

The standard 5V programming voltage streamlines integration with existing circuits and systems.

Temperature Grade: INDUSTRIAL

Industrial temperature grading indicates suitability for harsh environments, ensuring consistent performance.

Technology: CMOS

CMOS technology offers low power consumption, contributing to overall energy efficiency in designs.

Parallel or Serial: PARALLEL

Parallel operation allows for faster data throughput, improving the overall performance of data-intensive applications.

Terminal Form: J BEND

J-bend terminal form improves mechanical stability and ensures reliable connections.

Sector Size (Words): 16K

A sector size of 16K words enables efficient data management and performance across various applications.

Maximum Supply Current: 20 mA

The maximum supply current of 20 mA is low, ensuring the device is energy-efficient and suitable for battery-operated devices.

No. of Words: 131072 words

With 131072 words, this memory device offers substantial storage capacity for diverse applications.

Toggle Bit: YES

The presence of a toggle bit feature enhances error correction and communication reliability.

Memory Width: 8

An 8-bit memory width is ideal for general-purpose applications, providing balance between performance and complexity.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is standard, ensuring compatibility with many PCB designs and manufacturing processes.

No. of Words Code: 128K

A code indicating 128K words provides a substantial data structure for various user applications.

Command User Interface: YES

A command user interface simplifies user access and control, enhancing user experience and operational efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a maximum voltage of 5.5V provides design flexibility while ensuring reliable operation.

Endurance: 100000 Write/Erase Cycles

An endurance rating of 100,000 cycles means this flash memory is durable and suitable for frequent updates.

Memory Density: 1048576 bit

A memory density of 1048576 bit offers expansive storage capacity, accommodating large data sets.

Memory IC Type: FLASH

Being a FLASH memory IC allows for non-volatile storage, making it suitable for applications where data retention is crucial.

Maximum Standby Current: 0.0001 Amp

A very low maximum standby current contributes to energy savings and prolongs battery life in portable applications.

Maximum Access Time: 45 ns

With a maximum access time of 45 ns, the device provides quick data retrieval suitable for high-speed applications.

Data Polling: YES

Data polling capability ensures efficient monitoring of memory operations, enhancing performance in data-intensive applications.

Technical Specifications

Flash Memory M29F010B45K6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

45 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

250

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29F010B45K6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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