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M29W040B90K1E

STMicroelectronics

M29W040B90K1E by STMicroelectronics

M29W040B90K1E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles, making it ideal for embedded applications. With its compact chip carrier design and commercial temperature grade, it's perfect for space-constrained devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Chip Stock

USA . 18,900 parts In-Stock

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Cyclops Electronics Ltd

UK . 9,995 parts In-Stock

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9,995

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Vyrian

USA . 5,261 parts In-Stock

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Anansix

USA . 1,755 parts In-Stock

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1,755

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Digiode

USA . 282 parts In-Stock

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282

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Microfarads

USA . 2 parts In-Stock

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2

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Bristol Electronics

USA . 2 parts In-Stock

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2

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Semtec, LLC

USA . 1 parts In-Stock

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1

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,549 parts In-Stock

1+ parts

$3.260

100+ parts

-

1k+ parts

$2.934

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1,549

$3.260

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$2.934

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MKK Technologies

India . 162 parts In-Stock

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$6.131

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162

$6.131

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DigiPath Technology Company

USA . 162 parts In-Stock

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$6.131

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162

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AZTECH Wire

Italy . 791 parts In-Stock

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$11.110

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791

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Component Stockers USA

USA . 291 parts In-Stock

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$99.990

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291

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Authorized Procurement Solutions

USA . 36,000 parts In-Stock

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Kepictronics

USA . 9,552 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,832 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,221 parts In-Stock

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Corphita

USA . 1,989 parts In-Stock

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1,989

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Parana Technologies

USA . 1,325 parts In-Stock

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$3.898

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Microchip USA

USA . 227 parts In-Stock

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Overview

Unlock the power of reliable, high-performance storage with the M29W040B90K1E Flash Memory from STMicroelectronics. Renowned for their excellence in semiconductor technology, STMicroelectronics delivers a product designed for seamless integration and optimal efficiency across various applications such as consumer electronics, automotive systems, and industrial automation. Benefit from its low power consumption, robust design, and impressive endurance, ensuring your devices run smoothly and efficiently, giving you peace of mind and enhancing your innovation potential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental stress, ensuring a long-lasting product.

Surface Mount: YES

Surface mount technology allows for smaller circuit board designs and easier automated assembly.

Package Shape: RECTANGULAR

The rectangular shape optimizes space in PCB layouts, making it suitable for a variety of applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for more flexible control of data access, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at 3.3 V is ideal for low-power applications, making it energy-efficient.

Power Supplies (V): 3/3.3

Multiple supply voltage options provide versatility for integration into various systems.

No. of Terminals: 32

Having 32 terminals provides numerous connection points for data and power, facilitating integration.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging is suitable for high-density mounting and efficient heat dissipation.

Maximum Operating Temperature: 70 °C

With a high operating temperature, this product is suitable for use in hot environments without compromising performance.

Organization: 512KX8

The organization allows for efficient memory addressing and data retrieval, making it ideal for specific applications.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures functionality in cool environments.

No. of Sectors/Size: 8

Having multiple sectors aids in data management, enhancing performance and reliability.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and resistance to corrosion, ensuring reliable connections.

Terminal Position: QUAD

Quad terminal position allows for better signal integrity and easier routing on circuit boards.

Maximum Seated Height: 3.56 mm

The compact height allows for fitting into tight spaces within electronic devices.

Width: 11.43 mm

A moderate width balances footprint and layout efficiency in device design.

Minimum Supply Voltage (Vsup): 2.7 V

Supports low voltage operation, enhancing compatibility with modern electronic systems.

Type: NOR TYPE

NOR type memory is known for fast read speeds, making it suitable for applications that require rapid data access.

Length: 13.97 mm

The length size is designed for optimal layout and space utilization within circuit boards.

Programming Voltage (V): 2.7

A low programming voltage not only conserves energy but also reduces stress on the memory cells.

Temperature Grade: COMMERCIAL

Commercial grade ensures the product is suitable for a wide range of applications and environments.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, ideal for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel communication allows for faster data transfer rates, enhancing system performance.

Terminal Form: J BEND

J bend terminals provide efficient and reliable soldering practices during assembly.

Sector Size (Words): 64K

The 64K sector size supports efficient data management and easier error recovery.

Maximum Supply Current: 20 mA

Low current consumption helps reduce power usage and thermal output in electronic applications.

No. of Words: 524288 words

A large word count allows for substantial data storage capacity, making it suitable for complex applications.

Toggle Bit: YES

Toggle bit functionality enhances data integrity checks and simplifies memory management.

Memory Width: 8

An 8-bit memory width is standard for many applications, ensuring broad compatibility.

Terminal Pitch: 1.27 mm

A standard terminal pitch promotes ease of soldering and compatibility with existing designs.

No. of Words Code: 512K

512K word code indicates a moderate capacity, striking a balance between performance and cost.

Command User Interface: YES

A command user interface simplifies integration into various designs and enhances usability.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, helping to ensure proper handling and storage.

Maximum Supply Voltage (Vsup): 3.6 V

Supporting up to 3.6 V allows for flexibility in operating voltage ranges, suitable for different applications.

Endurance: 100000 Write/Erase Cycles

High endurance ensures reliability and longevity for applications requiring frequent writing and erasing of data.

Memory Density: 4194304 bit

The considerable memory density provides ample storage for applications requiring significant data handling.

Memory IC Type: FLASH

Being a flash memory type provides non-volatile storage capabilities, ideal for maintaining data without power.

Maximum Standby Current: 0.0001 Amp

Very low standby current contributes to overall power efficiency, particularly for battery-operated devices.

Maximum Access Time: 90 ns

Rapid access time ensures quick response in applications requiring high-speed data retrieval.

Data Polling: YES

Data polling capability improves the reliability and integrity of data operations, making it suitable for critical applications.

Technical Specifications

Flash Memory M29W040B90K1E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29W040B90K1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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