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M29F040B70N6E

STMicroelectronics

M29F040B70N6E by STMicroelectronics

M29F040B70N6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous mode, operates b/w -40 °C to 85 °C, and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 13,600 parts In-Stock

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Vyrian

USA . 5,888 parts In-Stock

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Anansix

USA . 2,434 parts In-Stock

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Digiode

USA . 543 parts In-Stock

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IDEA Electronic Components Group

UK . 1,699 parts In-Stock

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$3.308

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$2.977

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1,699

$3.308

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$2.977

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MKK Technologies

India . 1 parts In-Stock

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$6.221

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DigiPath Technology Company

USA . 1 parts In-Stock

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$6.221

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1

$6.221

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AZTECH Wire

Italy . 586 parts In-Stock

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$22.060

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586

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Component Stockers USA

USA . 658 parts In-Stock

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$99.990

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658

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Corphita

USA . 2,080 parts In-Stock

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Parana Technologies

USA . 1,896 parts In-Stock

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$3.956

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Microchip USA

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Assy Fe

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Overview

Unlock unparalleled performance and reliability with the M29F040B70N6E Flash Memory from STMicroelectronics. Renowned for their cutting-edge technology, STMicroelectronics delivers this robust, industrial-grade memory solution, ideal for a variety of applications, including automotive, telecommunications, and consumer electronics. Enjoy swift access times, durability with 100,000 write/erase cycles, and a compact design that fits effortlessly into your projects. Experience the perfect blend of quality, innovation, and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a durable and lightweight design, making it suitable for various applications.

Surface Mount: YES

Being a surface mount device allows for easier integration into compact circuitry, facilitating high-density designs.

Package Shape: RECTANGULAR

The rectangular package shape is optimal for efficient space utilization on PCBs, enhancing layout flexibility.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode provides faster access to memory, improving overall performance in read operations.

Nominal Supply Voltage / Vsup: 5V

Operating at a nominal supply voltage of 5V is compatible with a wide range of systems, simplifying power supply requirements.

Power Supplies (V): 5

The consistent power supply requirement of 5V enhances reliability, ensuring stability during operation.

No. of Terminals: 32

The presence of 32 terminals supports a robust connection, ensuring reliable performance even in high-demand applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile packaging makes it ideal for space-constrained designs, enhancing the versatility of applications.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes this product suitable for industrial applications that demand robust performance in challenging environments.

Organization: 512KX8

The 512KX8 memory organization offers a balanced structure for managing data, enabling efficient storage and retrieval.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this device is ideal for use in extreme environments, increasing its applicability in various sectors.

No. of Sectors/Size: 8

Having 8 sectors allows for organized data storage and management, enhancing the efficiency of memory operations.

Terminal Finish: TIN/TIN BISMUTH

The tin/tin bismuth terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

The dual terminal position enhances connection options, making it easier to integrate into different circuit designs.

Maximum Seated Height: 1.2 mm

A maximum seated height of 1.2 mm contributes to a slim profile, allowing for denser component layouts.

Width: 8 mm

The 8 mm width is compact, making this product suitable for small devices while allowing for multiple units on a PCB.

Minimum Supply Voltage (Vsup): 4.5V

A minimum supply voltage of 4.5V indicates versatility for various applications, accommodating a broader range of power supply scenarios.

Type: NOR TYPE

As a NOR type memory, it offers faster random access times, making it suitable for quick data retrieval tasks.

Length: 18.4 mm

The length of 18.4 mm is optimal for fitting into compact enclosures without sacrificing performance.

Programming Voltage (V): 5

The programming voltage of 5V is standard, making it easier to interface with existing systems.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this memory is built to withstand harsh operating conditions, extending its usable life in demanding environments.

Technology: CMOS

CMOS technology ensures low power consumption, making it energy-efficient and suitable for battery-operated devices.

Parallel or Serial: PARALLEL

The parallel architecture allows for faster data transfer rates, improving overall system performance.

Terminal Form: GULL WING

Gull wing terminals provide a stable mounting option and help reduce stress on the leads during soldering.

Sector Size (Words): 64K

A sector size of 64K allows for efficient data management, facilitating faster read and write operations.

Maximum Supply Current: 20 mA

The maximum supply current of 20 mA is low, making it suitable for power-sensitive applications.

No. of Words: 524288 words

With 524288 words of capacity, this memory offers sufficient storage for a variety of applications, balancing size and performance.

Toggle Bit: YES

The presence of a toggle bit enhances data integrity by providing a method for error detection and correction.

Memory Width: 8

An 8-bit memory width is standard for many applications, providing a balance between performance and complexity.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm enables compact designs while maintaining reliable connections.

No. of Words Code: 512K

The 512K words code ensures enough space for diverse applications, from embedded systems to consumer electronics.

Command User Interface: YES

Featuring a command user interface simplifies the control of the memory device, making programming and integration easier.

Maximum Supply Voltage (Vsup): 5.5V

The maximum supply voltage of 5.5V provides a safety margin for power supply variations, ensuring stable operation.

Endurance: 100000 Write/Erase Cycles

An endurance of 100,000 write/erase cycles ensures longevity, making this memory a reliable choice for applications that require frequent updates.

Memory Density: 4194304 bit

With a memory density of 4194304 bits, this device meets high-storage demands while maintaining a compact form factor.

Memory IC Type: FLASH

Being a flash memory IC, it offers non-volatile storage, retaining data even when power is lost, which is essential for many applications.

Maximum Standby Current: 0.0001 Amp

A low maximum standby current minimizes power consumption during idle periods, contributing to energy efficiency.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this memory offers quick data retrieval, enhancing system responsiveness.

Data Polling: YES

The data polling feature provides an efficient method for monitoring memory status, improving reliability in applications where data integrity is crucial.

Technical Specifications

Flash Memory M29F040B70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29F040B70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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