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M50FW016N5G

STMicroelectronics

M50FW016N5G by STMicroelectronics

M50FW016N5G from STMicroelectronics is a 16Mb NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.0-3.6V, features a compact SOIC package, and is ideal for embedded applications requiring reliable data storage. Its dual terminal design ensures efficient surface mounting in space-constrained environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Cyclops Electronics Ltd

UK . 20,598 parts In-Stock

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USA . 18,000 parts In-Stock

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Vyrian

USA . 5,161 parts In-Stock

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Anansix

USA . 1,119 parts In-Stock

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Digiode

USA . 591 parts In-Stock

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Prism Electronics

USA . 68 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 20 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 521 parts In-Stock

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$3.332

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$2.999

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521

$3.332

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MKK Technologies

India . 812 parts In-Stock

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$6.266

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DigiPath Technology Company

USA . 812 parts In-Stock

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$6.266

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AZTECH Wire

Italy . 994 parts In-Stock

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$20.900

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Kepictronics

USA . 20,651 parts In-Stock

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Assy Fe

Spain . 20,651 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,726 parts In-Stock

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Parana Technologies

USA . 1,869 parts In-Stock

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$3.984

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Alle Elektronik GmbH

Germany . 1,817 parts In-Stock

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Microchip USA

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Corphita

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Perfect Parts

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Overview

Unlock the potential of your designs with the M50FW016N5G flash memory from STMicroelectronics. Renowned for its reliability and innovation, STMicroelectronics provides a robust solution that excels in diverse applications, from consumer electronics to industrial systems. With its compact, thin-profile design and exceptional performance, this memory chip ensures efficient data storage and rapid access, empowering your projects with speed and efficiency. Experience the quality that drives progress!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides protection from environmental factors, ensuring longevity and reliability of the flash memory.

Surface Mount: YES

Surface mount technology allows for a compact design, making it ideal for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular package shape maximizes space efficiency on the PCB, enabling denser circuit designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer speeds, improving overall performance of the memory device.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal supply voltage of 3.3V is standard in many applications, ensuring compatibility and ease of integration.

No. of Terminals: 40

With 40 terminals, this flash memory provides ample connectivity options for various applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile facilitate space-saving designs, making it suitable for compact electronic devices.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes this memory suitable for a wide range of applications, including industrial environments.

Organization: 2MX8

The 2MX8 organization enhances data management and access, improving efficiency in data operations.

Minimum Operating Temperature: -20 °C

The ability to operate at -20 °C allows for usage in colder environments, adding to its versatility.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides excellent solderability and reliability, ensuring strong connections.

Terminal Position: DUAL

Dual terminal positions improve flexibility in PCB layout, allowing for optimized design.

Maximum Seated Height: 1.2 mm

A low seated height of 1.2 mm is ideal for sleek designs, contributing to the compact profile of devices.

Width: 10 mm

The narrow width enables efficient space utilization on PCBs, making the memory suitable for tight layouts.

Minimum Supply Voltage (Vsup): 3 V

Operating at a minimum supply voltage of 3 V enhances compatibility with a variety of systems and power-saving applications.

Peak Reflow Temperature: 260 °C

The peak reflow temperature ensures that the device can withstand the soldering process without damage, promoting reliability.

Type: NOR TYPE

NOR flash is known for fast read speeds and efficient random access, making it suitable for code storage.

Length: 18.4 mm

The 18.4 mm length is optimal for fitting into most standard layouts while maximizing storage capacity.

Programming Voltage: 3 V

With a programming voltage of 3 V, this memory is easy to integrate with standard microcontroller voltages.

Technology: CMOS

CMOS technology offers low power consumption while maintaining high performance, ideal for battery-operated devices.

Parallel or Serial: PARALLEL

A parallel interface allows for faster data transfer rates compared to serial, improving performance in high-speed applications.

Terminal Form: GULL WING

Gull wing terminals simplify PCB assembly and increase manufacturing reliability.

No. of Words: 2097152 words

With over 2 million words, this memory provides substantial storage for applications requiring large data sets.

Memory Width: 8

An 8-bit memory width supports efficient data handling, suitable for a variety of applications.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm provides compatibility with high-density PCB designs.

No. of Words Code: 2M

A coding capacity of 2M words allows this part to efficiently handle large programs or datasets.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates the device can be handled with limited precautions, facilitating easier manufacturing processes.

Maximum Supply Voltage (Vsup): 3.6 V

This maximum supply voltage offers flexibility in design and allows for tuning the performance according to application needs.

Memory Density: 16777216 bits

A memory density of 16 megabits provides a significant amount of storage, enabling complex applications.

Memory IC Type: FLASH

Flash memory allows for non-volatile data storage, retaining information even when power is lost.

Maximum Access Time: 11 ns

An access time of 11 ns ensures quick data retrieval, enhancing the system's performance.

Technical Specifications

Flash Memory M50FW016N5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e6

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

40

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50FW016N5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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