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M50FW080NB5G

STMicroelectronics

M50FW080NB5G by STMicroelectronics

M50FW080NB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a compact SOIC package, operating at 3.3V. It features fast access times of 11 ns and supports asynchronous operation, making it ideal for embedded applications. With a wide temp range (-20 °C to 85 °C), it's perfect for diverse environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 24,600 parts In-Stock

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24,600

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Vyrian

USA . 6,471 parts In-Stock

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6,471

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Digiode

USA . 2,615 parts In-Stock

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2,615

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Anansix

USA . 1,618 parts In-Stock

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1,618

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 346 parts In-Stock

1+ parts

$2.329

100+ parts

-

1k+ parts

$2.096

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-

346

$2.329

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$2.096

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MKK Technologies

India . 756 parts In-Stock

1+ parts

$4.380

100+ parts

-

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756

$4.380

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DigiPath Technology Company

USA . 756 parts In-Stock

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$4.380

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-

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756

$4.380

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AZTECH Wire

Italy . 444 parts In-Stock

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$11.070

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-

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444

$11.070

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Component Stockers USA

USA . 581 parts In-Stock

1+ parts

$99.990

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581

$99.990

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A-Z Elektronik GmbH

Germany . 5,144 parts In-Stock

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5,144

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Alle Elektronik GmbH

Germany . 3,429 parts In-Stock

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3,429

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Corphita

USA . 2,771 parts In-Stock

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2,771

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Parana Technologies

USA . 2,196 parts In-Stock

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$2.785

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2,196

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$2.785

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Kepictronics

USA . 1,505 parts In-Stock

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Assy Fe

Spain . 1,505 parts In-Stock

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1,505

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Microchip USA

USA . 421 parts In-Stock

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421

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Overview

Unlock unparalleled performance with the M50FW080NB5G flash memory from STMicroelectronics—a leader in innovation and reliability. This compact, high-quality NOR flash solution excels in speed and efficiency, making it perfect for diverse applications, from consumer electronics to industrial devices. With a robust design and exceptional endurance, the M50FW080NB5G ensures your devices run smoothly, delivering unmatched value that empowers your projects to thrive. Elevate your designs with trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable construction ensures long-lasting performance and resistance to environmental factors.

Surface Mount: YES

Ideal for compact designs, allowing efficient use of space on printed circuit boards.

Package Shape: RECTANGULAR

Standard shape facilitates easier integration into various electronic designs.

Operating Mode: ASYNCHRONOUS

Allows for faster data access and operational efficiency in performance-critical applications.

Nominal Supply Voltage / Vsup (V): 3.3

Low voltage operation promotes energy efficiency and compatibility with modern digital systems.

Power Supplies (V): 3.3

Consistent voltage supply ensures stable operation across multiple applications.

No. of Terminals: 32

Provides ample connectivity options for complex circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Optimized for reduced footprint, perfect for space-constrained applications.

Maximum Operating Temperature: 85 °C

High temperature tolerance enhances reliability in demanding environments.

Organization: 1MX8

Allows efficient storage structure for organized data access.

Minimum Operating Temperature: -20 °C

Wide operational temperature range ensures functionality in various conditions.

No. of Sectors/Size: 16

Segmented structure helps in better management and organization of stored data.

Terminal Finish: TIN/TIN BISMUTH

Corrosion-resistant finish ensures reliable connectivity and longevity.

Terminal Position: DUAL

Facilitates flexible mounting options, enhancing design versatility.

Maximum Seated Height: 1.2 mm

Low profile design complements high-density PCBs and compact devices.

Width: 8 mm

Compact width enables integration into tight spaces within various devices.

Minimum Supply Voltage (Vsup): 3 V

Flexibility in supply voltage accommodates a range of applications.

Type: NOR TYPE

NOR flash memory supports fast read speeds, making it suitable for code execution.

Length: 12.4 mm

Compact length enhances compatibility with various designs and layouts.

Programming Voltage (V): 3

Standard programming voltage simplifies design requirements and increases compatibility.

Technology: CMOS

CMOS technology provides low power consumption while maintaining high performance.

Parallel or Serial: PARALLEL

Parallel interface allows for simultaneous data access, increasing overall performance.

Terminal Form: GULL WING

Gull wing terminals offer enhanced solderability and mounting stability.

Sector Size (Words): 64K

Larger sector sizes improve efficiency for bulk data operations and management.

Maximum Supply Current: 60 mA

Moderate current specification promotes energy efficiency suitable for battery-powered devices.

No. of Words: 1048576 words

Generous memory allocation supports complex applications and extensive data storage needs.

Memory Width: 8

8-bit memory width enhances data processing capabilities, making it suitable for wide applications.

Terminal Pitch: 0.5 mm

Fine pitch helps in high-density designs allowing more components in a compact area.

No. of Words Code: 1M

The 1M words capacity provides ample storage for applications requiring significant data.

Command User Interface: YES

User-friendly command interface simplifies development and integration processes.

Maximum Supply Voltage (Vsup): 3.6 V

Versatile voltage range supports a variety of system designs and operational requirements.

Memory Density: 8388608 bit

High memory density allows for efficient data management and storage in compact environments.

Memory IC Type: FLASH

Flash memory type ensures non-volatile storage, preserving data without power supply.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current enhances efficiency, making it suitable for power-sensitive applications.

Maximum Access Time: 11 ns

Fast access time ensures quick data retrieval, optimizing system performance.

Technical Specifications

Flash Memory M50FW080NB5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

12.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

16

No. of Terminals:

32

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M50FW080NB5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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