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M29F200BB70N6E

STMicroelectronics

M29F200BB70N6E by STMicroelectronics

M29F200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,202 parts In-Stock

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Digiode

USA . 852 parts In-Stock

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Anansix

USA . 694 parts In-Stock

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694

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NexGen Digital

USA . 30 parts In-Stock

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30

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IDEA Electronic Components Group

UK . 2,325 parts In-Stock

1+ parts

$2.507

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$2.256

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$2.507

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$2.256

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MKK Technologies

India . 141 parts In-Stock

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$4.714

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141

$4.714

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DigiPath Technology Company

USA . 141 parts In-Stock

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$4.714

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141

$4.714

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AZTECH Wire

Italy . 742 parts In-Stock

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$10.420

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742

$10.420

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QUARKTWIN TECHNOLOGY LTD

USA . 15,575 parts In-Stock

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Corphita

USA . 3,917 parts In-Stock

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Kepictronics

USA . 3,148 parts In-Stock

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Parana Technologies

USA . 1,356 parts In-Stock

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$2.998

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$2.998

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Microchip USA

USA . 380 parts In-Stock

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Overview

Unlock the potential of your designs with the M29F200BB70N6E Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. Renowned for their reliability, STMicroelectronics ensures that this high-performance memory delivers exceptional endurance and efficiency. Perfect for industrial applications, it boasts rapid access times and robust temperature tolerance, providing unmatched value to engineers seeking precision and performance. Elevate your projects with quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, enhancing the longevity of the product.

Surface Mount: YES

Surface mount technology allows for compact designs and higher efficiency in manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into various electronic designs, making it versatile for different applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides improved performance in speed and efficiency, which is crucial for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V means compatibility with standard electronic circuits, simplifying integration.

Power Supplies (V): 5

The requirement for a consistent 5V power supply makes it easy to source and integrate into existing systems.

No. of Terminals: 48

With 48 terminals, this memory chip offers ample connectivity for a variety of data and control signals.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and small outline significantly save board space, making it ideal for compact electronic devices.

Alternate Memory Width: 8

An alternative memory width enhances flexibility, allowing adaptation to different data bus architectures.

Maximum Operating Temperature: 85 °C

The ability to operate at higher temperatures makes it suitable for industrial and high-performance applications.

Organization: 128KX16

The organization format provides efficient data storage and access, which is essential for data-intensive applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range (-40 °C to 85 °C) makes this product reliable in harsh environmental conditions.

No. of Sectors/Size: 1,2,1,3

The configuration of sectors provides flexibility in data management, allowing effective use of memory space.

Terminal Finish: MATTE TIN/TIN BISMUTH

The use of matte tin/tin bismuth for terminal finish enhances reliability and prevents oxidation, ensuring better performance.

Terminal Position: DUAL

Dual terminal positioning improves soldering efficiency and connection reliability in surface mounting.

Maximum Seated Height: 1.2 mm

The low height profile promotes ease of placement in design layouts, ideal for space-constrained applications.

Width: 12 mm

Compact width allows for better placement options on PCB designs, contributing to smaller overall device sizes.

Minimum Supply Voltage (Vsup): 4.5 V

Operating with a minimum supply voltage of 4.5V enhances its compatibility with a variety of power supply systems.

Maximum Time At Peak Reflow Temperature (s): 40

A peak reflow time of 40 seconds provides adequate processing without damaging the component, ensuring reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature indicates robustness during manufacturing, allowing for efficient assembly processes.

Type: NOR TYPE

NOR type architecture allows for faster read speeds and random access, ideal for applications requiring quick data retrieval.

Length: 18.4 mm

The standard length fits well within common PCB layouts, simplifying design and manufacturing processes.

Programming Voltage (V): 5

A standard programming voltage simplifies integration into existing systems, reducing design complexity.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures reliability in challenging environments, making it suitable for demanding applications.

Technology: CMOS

CMOS technology provides low power consumption and high reliability, contributing to energy efficiency in devices.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates compared to serial interfaces, enhancing overall performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics and mechanical strength, ensuring reliable connections.

Sector Size (Words): 16K,8K,32K,64K

Varied sector sizes offer flexibility in data management and program configurations to suit different application needs.

Maximum Supply Current: 20 mA

A low maximum supply current contributes to the overall energy efficiency of the system, prolonging battery life in portable devices.

No. of Words: 131072 words

The large word capacity supports sophisticated applications requiring significant data storage.

Toggle Bit: YES

The toggle bit feature allows for easier data handling and management, enhancing read/write operations.

Memory Width: 16

The 16-bit memory width enables efficient data handling and facilitates easier integration with 16-bit data buses.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for higher density layouts, accommodating more components within smaller circuit boards.

No. of Words Code: 128K

A well-defined word code of 128K ensures clarity in source code operations and data management.

Command User Interface: YES

The presence of a command user interface simplifies interaction and programming, making it user-friendly.

Ready or Busy: YES

The ready/busy status indication provides real-time feedback on the memory state, improving system coordination.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage allows for some flexibility in power supply options while ensuring safety and performance.

Endurance: 100000 Write/Erase Cycles

A high endurance rating ensures longevity and reliability, making it suitable for applications requiring frequent updates.

Boot Block: BOTTOM

Having a bottom boot block aids in secure programming and data management, enhancing the memory's utility.

Memory Density: 2097152 bit

The substantial memory density provides ample storage for complex applications, accommodating a wide range of data types.

Memory IC Type: FLASH

Flash memory type offers non-volatile storage, ensuring data retention even when power is off, ideal for embedded systems.

Maximum Standby Current: 0.0001 Amp

The very low standby current enhances power efficiency, making it ideal for battery-operated devices.

Maximum Access Time: 70 ns

Fast access time of 70 ns significantly improves performance in data-intensive applications, suitable for real-time processing.

Data Polling: YES

Data polling feature improves data integrity and error handling, providing a reliable memory solution.

Technical Specifications

Flash Memory M29F200BB70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F200BB70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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