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M50FW080N5G

STMicroelectronics

M50FW080N5G by STMicroelectronics

M50FW080N5G from STMicroelectronics is a 1Mx8 NOR Flash memory with a 3.3V supply, ideal for asynchronous applications. It features a max access time of 11 ns and operates b/w -20 °C to 85 °C. This compact SOIC package is perfect for space-constrained designs.

Median Price

$11.200

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 5 parts In-Stock

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$11.200

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5

$11.200

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DF Sales Co.

USA . 5 parts In-Stock

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$11.200

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5

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Chip Stock

USA . 17,300 parts In-Stock

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Digiode

USA . 4,612 parts In-Stock

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Vyrian

USA . 3,079 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,855 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,176 parts In-Stock

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Anansix

USA . 371 parts In-Stock

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371

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Semi Source

USA . 285 parts In-Stock

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285

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Prism Electronics

USA . 75 parts In-Stock

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75

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Carlin Systems, Inc.

USA . 7 parts In-Stock

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 2,568 parts In-Stock

1+ parts

$1.130

100+ parts

$1.070

1k+ parts

$1.040

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2,568

$1.130

$1.070

$1.040

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IDEA Electronic Components Group

UK . 33 parts In-Stock

1+ parts

$4.064

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$3.657

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33

$4.064

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$3.657

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MKK Technologies

India . 201 parts In-Stock

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$7.641

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201

$7.641

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DigiPath Technology Company

USA . 201 parts In-Stock

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$7.641

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201

$7.641

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AZTECH Wire

Italy . 1,161 parts In-Stock

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$15.890

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$15.890

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Kepictronics

USA . 68,501 parts In-Stock

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68,501

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Metaverse IC Inc.

Canada . 11,889 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,504 parts In-Stock

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Microchip USA

USA . 5,695 parts In-Stock

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5,695

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Alle Elektronik GmbH

Germany . 4,336 parts In-Stock

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4,336

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 3,923 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,201 parts In-Stock

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Parana Technologies

USA . 2,023 parts In-Stock

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$4.859

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2,023

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$4.859

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Assy Fe

Spain . 1,604 parts In-Stock

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1,604

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Perfect Parts

USA . 84 parts In-Stock

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Overview

Unlock unparalleled performance with the M50FW080N5G Flash Memory from STMicroelectronics, a leader in semiconductor innovation. Designed for efficiency, this compact and reliable solution offers exceptional speed and versatility for a myriad of applications, from consumer electronics to industrial systems. Benefit from its low power consumption and robust temperature range, ensuring optimal operation in challenging environments. Experience enhanced data integrity and longevity, making it the smart choice for your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures robustness and long-lasting performance.

Surface Mount: YES

Surface mount technology allows for efficient use of space on PCBs and enables automated assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy integration into various designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides quicker response times, enhancing the efficiency of data transfers.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V makes it compatible with low-power applications while reducing energy consumption.

Power Supplies (V): 3.3

Standard power supply requirements simplify system design and reduce complexity.

No. of Terminals: 40

A higher number of terminals allows more connections, facilitating broader functionality in applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small and thin profile is perfect for space-constrained applications, such as mobile devices.

Maximum Operating Temperature: 85 °C

Operating up to 85 °C ensures reliability in high-temperature environments, making it suitable for industrial use.

Organization: 1MX8

This organization means efficient data storage and retrieval, ideal for various applications.

Minimum Operating Temperature: -20 °C

Wide temperature range compatibility ensures reliable operation in diverse environments.

No. of Sectors/Size: 16

Multiple sectors allow for organized data storage and improved manageability.

Terminal Finish: TIN BISMUTH

A tin-bismuth finish enhances corrosion resistance, ensuring longer product lifespan.

Terminal Position: DUAL

Dual terminal positioning can facilitate easier connectivity and integration into various designs.

Maximum Seated Height: 1.2 mm

The low profile design minimizes space requirements on circuit boards.

Width: 10 mm

Compact width is advantageous for PCB designs with tight spacing.

Minimum Supply Voltage (Vsup): 3 V

Flexible supply voltage allows for compatibility with a variety of systems.

Type: NOR TYPE

The NOR type offers fast read speeds, particularly useful for high-performance applications.

Length: 18.4 mm

Compact length makes it ideal for space-constrained designs without compromising performance.

Programming Voltage (V): 3

Low programming voltage enhances safety and efficiency during operation.

Technology: CMOS

CMOS technology ensures lower power consumption and better performance.

Parallel or Serial: PARALLEL

Parallel communication leads to faster data transfer rates, enhancing application performance.

Terminal Form: GULL WING

Gull wing terminals simplify soldering and ensure reliable connections.

Sector Size (Words): 64K

Larger sector sizes allow for more efficient data management and faster access.

Maximum Supply Current: 60 mA

Moderate current requirement aids in low-power design applications.

No. of Words: 1048576 words

A large number of words provides substantial storage capacity for data-intensive applications.

Memory Width: 8

8-bit memory width is suitable for many standard applications, striking a balance between cost and capacity.

Terminal Pitch: 0.5 mm

Fine pitch allows for compact designs, accommodating high-density layouts.

No. of Words Code: 1M

1M words gives ample space for code storage, ideal for embedded systems.

Command User Interface: YES

An accessible command user interface simplifies integration and usage for developers.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates a moderate sensitivity to moisture, guiding storage and handling procedures.

Maximum Supply Voltage (Vsup): 3.6 V

Allows for safe operation at slightly higher voltages during peak performance.

Memory Density: 8388608 bit

High memory density facilitates the storage of large data volumes in compact form.

Memory IC Type: FLASH

Flash memory type offers non-volatile data storage, ensuring data retention without power.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current enhances overall system efficiency and battery life.

Maximum Access Time: 11 ns

Fast access time improves system responsiveness, crucial for high-performance applications.

Technical Specifications

Flash Memory M50FW080N5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e6

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Sectors/Size:

16

No. of Terminals:

40

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50FW080N5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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