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M50FLW080BNB5G

STMicroelectronics

M50FLW080BNB5G by STMicroelectronics

M50FLW080BNB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,582 parts In-Stock

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7,582

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Anansix

USA . 1,785 parts In-Stock

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1,785

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Digiode

USA . 467 parts In-Stock

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467

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,372 parts In-Stock

1+ parts

$1.939

100+ parts

-

1k+ parts

$1.745

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-

2,372

$1.939

-

$1.745

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MKK Technologies

India . 460 parts In-Stock

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$3.647

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460

$3.647

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DigiPath Technology Company

USA . 460 parts In-Stock

1+ parts

$3.647

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460

$3.647

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AZTECH Wire

Italy . 444 parts In-Stock

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$9.270

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444

$9.270

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Component Stockers USA

USA . 612 parts In-Stock

1+ parts

$99.990

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612

$99.990

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Parana Technologies

USA . 1,329 parts In-Stock

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$2.319

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$2.319

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Microchip USA

USA . 211 parts In-Stock

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Corphita

USA . 173 parts In-Stock

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Overview

Elevate your designs with the M50FLW080BNB5G flash memory from STMicroelectronics, a trusted leader in semiconductor solutions. This high-performance NOR flash offers superior reliability and efficiency, making it ideal for diverse applications like automotive, industrial, and consumer electronics. With a compact footprint and robust temperature range, it ensures seamless integration and optimal performance, empowering you to innovate without compromise. Choose STMicroelectronics for quality that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers durability and resistance to environmental factors, ensuring reliable performance.

Surface Mount: YES

Surface mount technology allows for smaller circuit board designs and can improve manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space usage on PCBs, making it easier to integrate into various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer rates, making the memory quicker and more efficient.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal supply voltage of 3.3V is standard for modern electronics, ensuring compatibility with a wide range of systems.

Power Supplies (V): 3.3

Consistent power supply requirement simplifies integration and keeps energy consumption within safe limits.

No. of Terminals: 32

A higher terminal count provides more options for connections, enhancing the integration flexibility into different systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline thin profile is ideal for compact designs, saving board space while maintaining performance.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliable operation in a range of environmental conditions.

Organization: 1MX8

1MX8 organization allows for efficient data storage, striking a balance between capacity and performance.

Minimum Operating Temperature: -20 °C

Operating in cold environments down to -20 °C expands the applicability of this memory in various conditions.

No. of Sectors/Size: 48, 13

Multiple sectors help with efficient data management and organization, improving overall performance.

Terminal Finish: TIN/TIN BISMUTH

This finish provides better solderability and corrosion resistance, ensuring reliable electrical performance.

Terminal Position: DUAL

Dual terminal positions enhance connectivity options, allowing for versatile design implementations.

Maximum Seated Height: 1.2 mm

Low profile design allows for integration in ultra-thin devices while conserving space.

Width: 8 mm

A width of 8 mm is suitable for a variety of devices, making it a versatile choice for developers.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3V ensures the device can operate efficiently in varied environments.

Type: NOR TYPE

NOR type flash memory is known for its fast access times and is suitable for code storage applications.

Length: 12.4 mm

The compact length allows for more flexibility in device design, aiding in space-constrained applications.

Programming Voltage (V): 3

Standard programming voltage reduces design complexity and supports ease of integration.

Technology: CMOS

CMOS technology offers low power consumption and high density, making it suitable for modern applications.

Parallel or Serial: PARALLEL

Parallel processing allows for faster data access speeds, enhancing overall system performance.

Terminal Form: GULL WING

Gull wing terminals provide reliable mechanical and electrical connections, facilitating easy soldering.

Sector Size (Words): 4K, 64K

Versatile sector sizes allow for flexible memory organization to match different application requirements.

Maximum Supply Current: 60 mA

A maximum supply current of 60 mA indicates the device can operate efficiently while providing the necessary power.

No. of Words: 1048576 words

With over a million words available, this memory offers substantial storage capacity for applications.

Memory Width: 8

An 8-bit memory width allows for efficient data handling and compatibility with various data buses.

Terminal Pitch: 0.5 mm

A tight terminal pitch supports high-density applications, enabling smaller PCB layouts.

No. of Words Code: 1M

1M words capacity signifies a good balance of size and performance for most applications.

Command User Interface: YES

A command user interface simplifies integration, allowing developers to easily control memory operations.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V provides flexibility in power management for various systems.

Memory Density: 8388608 bit

High memory density ensures that ample data can be stored within a compact form factor.

Memory IC Type: FLASH

Flash memory type is preferred for its reusability and fast access speeds, ideal for a range of applications.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current minimizes power consumption, promoting energy-efficient designs.

Maximum Access Time: 11 ns

Fast access time of 11 ns ensures quick data retrieval, enhancing overall system responsiveness.

Technical Specifications

Flash Memory M50FLW080BNB5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

12.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,13

No. of Terminals:

32

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M50FLW080BNB5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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