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M29W010B70N6E

STMicroelectronics

M29W010B70N6E by STMicroelectronics

M29W010B70N6E from STMicroelectronics is a NOR flash memory with a 128K x 8 organization, operating at 3.3V and featuring a max access time of 70 ns. It supports asynchronous operation and offers industrial-grade temperature range (-40 °C to 85 °C). Ideal for embedded applications, it ensures high endurance with up to 100k write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 18,600 parts In-Stock

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Vyrian

USA . 6,990 parts In-Stock

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6,990

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Anansix

USA . 2,809 parts In-Stock

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Digiode

USA . 1,921 parts In-Stock

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Pegasus Components GmbH

Germany . 47 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,518 parts In-Stock

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$4.643

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$4.179

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1,518

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$4.179

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MKK Technologies

India . 56 parts In-Stock

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$8.731

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56

$8.731

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DigiPath Technology Company

USA . 56 parts In-Stock

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$8.731

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56

$8.731

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AZTECH Wire

Italy . 161 parts In-Stock

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$17.770

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161

$17.770

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QUARKTWIN TECHNOLOGY LTD

USA . 27,076 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,734 parts In-Stock

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Microchip USA

USA . 4,533 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,489 parts In-Stock

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Corphita

USA . 4,169 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Parana Technologies

USA . 1,884 parts In-Stock

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$5.552

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Kepictronics

USA . 1,752 parts In-Stock

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Metaverse IC Inc.

Canada . 1,026 parts In-Stock

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Overview

Unlock the power of reliable storage with the M29W010B70N6E Flash Memory from STMicroelectronics. Renowned for their superior quality and innovation, STMicroelectronics delivers a solution that excels in performance across diverse applications, from automotive to industrial systems. This compact, energy-efficient memory device ensures swift data access and robust endurance, providing unmatched value and peace of mind for your projects. Trust in STMicroelectronics for cutting-edge technology that drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body ensures protection against environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for efficient space utilization on PCBs, enhancing design flexibility.

Package Shape: RECTANGULAR

The rectangular shape helps in easier integration into designs, providing a compact footprint.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access and improved performance in read/write operations.

Nominal Supply Voltage / Vsup (V): 3.3

Standard nominal voltage of 3.3V provides compatibility with a broad range of electronic devices.

Power Supplies (V): 3/3.3

Supports both 3V and 3.3V power supplies, increasing versatility across different applications.

No. of Terminals: 32

With 32 terminals, extensive functionalities can be achieved while ensuring reliable connections.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact style is ideal for space-constrained applications, making it suitable for modern electronics.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature indicates suitability for industrial applications that experience high thermal conditions.

Organization: 128KX8

This organization allows for efficient data storage and retrieval, enhancing overall system performance.

Minimum Operating Temperature: -40 °C

The wide temperature range from -40 °C to 85 °C is ideal for harsh environments, ensuring reliable operation.

No. of Sectors/Size: 8

Having multiple sectors enhances data management and improves system organization.

Terminal Finish: TIN/TIN BISMUTH

The reliable terminal finish ensures durability and excellent solderability for robust connections.

Terminal Position: DUAL

Dual terminal positioning allows for better adaptability in circuit designs, ensuring user convenience.

Maximum Seated Height: 1.2 mm

A lower seated height promotes a more compact design and is better suited for thin profile applications.

Width: 8 mm

This width allows for efficient utilization of board space, facilitating easy integration.

Minimum Supply Voltage (Vsup): 2.7 V

Operates at a low minimum supply voltage, making it versatile for devices with lower power requirements.

Type: NOR TYPE

NOR flash provides fast read performance, making it an excellent choice for fast data access applications.

Length: 18.4 mm

Compact length allows it to fit into tight spaces while maintaining functionality.

Programming Voltage (V): 2.7

Low programming voltage reduces power consumption, allowing it to be used in energy-sensitive applications.

Temperature Grade: INDUSTRIAL

Industrial-grade components ensure reliability and longevity in challenging operational environments.

Technology: CMOS

CMOS technology provides lower power consumption, making it suitable for battery-powered devices.

Parallel or Serial: PARALLEL

Parallel data access allows for faster read and write operations, enhancing system performance.

Terminal Form: GULL WING

Gull wing terminals provide a stable mechanical connection, ensuring reliability in soldered joints.

Sector Size (Words): 16K

A larger sector size facilitates efficient data management, allowing for quicker data processing.

Maximum Supply Current: 20 mA

Low maximum supply current aids in preserving battery life in portable applications.

No. of Words: 131072 words

A substantial data capacity ensures adequate storage for a wide range of applications.

Toggle Bit: YES

Toggle bit functionality enables easy status checking during read/write operations, contributing to enhanced reliability.

Memory Width: 8

An 8-bit memory width is standard for many applications, ensuring compatibility with common interfaces.

Terminal Pitch: 0.5 mm

A fine terminal pitch allows for densely packed electronic designs, catering to modern compact designs.

No. of Words Code: 128K

A high word code count offers significant storage space, suitable for large data applications.

Command User Interface: YES

A user-friendly command interface simplifies operations and promotes ease of integration into various systems.

Maximum Supply Voltage (Vsup): 3.6 V

Capable of operating at higher voltages, it provides flexibility for applications requiring increased performance.

Endurance: 100000 Write/Erase Cycles

A high endurance rating ensures long-lasting performance, particularly in applications requiring frequent updates.

Memory Density: 1048576 bit

The substantial memory density supports a wide range of applications and helps in meeting growing storage needs.

Memory IC Type: FLASH

Flash memory is suitable for a variety of applications including storage devices, embedded systems, and more.

Maximum Standby Current: 0.0001 Amp

Minimal standby current helps conserve power during inactive periods, vital for battery-operated devices.

Maximum Access Time: 70 ns

A quick access time enhances the speed of data retrieval, ensuring efficient performance in data-intensive applications.

Data Polling: YES

Data polling capability enhances reliability by allowing verification of data programming status, ensuring data integrity.

Technical Specifications

Flash Memory M29W010B70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29W010B70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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