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M29W010B70K6E

STMicroelectronics

M29W010B70K6E by STMicroelectronics

M29W010B70K6E from STMicroelectronics is a NOR flash memory with a 128Kx8 organization, operating at 3.3V and supporting asynchronous mode. It features an industrial temperature range of -40 °C to 85 °C and offers up to 100,000 write/erase cycles. Ideal for embedded applications, it ensures reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,632 parts In-Stock

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3,632

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Anansix

USA . 2,831 parts In-Stock

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2,831

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Digiode

USA . 1,033 parts In-Stock

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1,033

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 248 parts In-Stock

1+ parts

$2.351

100+ parts

-

1k+ parts

$2.116

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248

$2.351

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$2.116

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MKK Technologies

India . 105 parts In-Stock

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$4.420

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105

$4.420

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DigiPath Technology Company

USA . 105 parts In-Stock

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$4.420

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105

$4.420

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AZTECH Wire

Italy . 503 parts In-Stock

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$21.960

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503

$21.960

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Component Stockers USA

USA . 689 parts In-Stock

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$99.990

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689

$99.990

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Kepictronics

USA . 7,634 parts In-Stock

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Corphita

USA . 3,882 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Microchip USA

USA . 417 parts In-Stock

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417

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Parana Technologies

USA . 241 parts In-Stock

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$2.810

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241

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$2.810

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Overview

Unlock the potential of your projects with the M29W010B70K6E Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. Built to withstand extreme temperatures and engineered with robust endurance for over 100,000 write/erase cycles, this high-quality memory chip is perfect for industrial applications, ensuring reliability and efficiency. Experience superior performance, lower power consumption, and unmatched durability—empowering your designs like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection from environmental factors, making the product reliable for various applications.

Surface Mount: YES

Being surface mount technology allows for reduced PCB space and improved design flexibility, making it suitable for compact devices.

Package Shape: RECTANGULAR

The rectangular shape is standard for many PCB layouts, facilitating easier integration into existing designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for quicker data handling and can improve system performance in high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a nominal voltage of 3.3V, making it compatible with most modern digital circuits.

Power Supplies (V): 3/3.3

Flexible voltage supply options ensure compatibility with various microcontrollers and systems.

No. of Terminals: 32

A 32-terminal configuration allows for robust connectivity and supports various interfacing options.

Package Style (Meter): CHIP CARRIER

As a chip carrier, this style promotes efficient heat dissipation and ensures stable operation in high-performance environments.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature rating makes it suitable for industrial applications where temperature variations are common.

Organization: 128KX8

This organization offers a balanced architecture for storage applications, optimizing data access and integrity.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C ensures reliability in extreme environments, ideal for industrial and automotive applications.

No. of Sectors/Size: 8

Having multiple sectors allows for efficient data management and organization, enhancing performance during write/erase cycles.

Terminal Finish: MATTE TIN

Matte tin terminal finishes provide excellent solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: QUAD

Quad terminal positioning allows for lower inductance and supports high-frequency applications, leading to better performance.

Maximum Seated Height: 3.56 mm

A compact height allows for space-efficient designs, enabling integration in slim-profile applications.

Width: 11.43 mm

Standard width facilitates compatibility with a variety of PCB layouts and designs.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V enables compatibility with lower voltage applications, enhancing flexibility.

Type: NOR TYPE

NOR type memory is known for fast read speeds and efficient memory access, making it suitable for code execution.

Length: 13.97 mm

A well-defined length fits easily into various PCB designs and allows for straightforward positioning.

Programming Voltage (V): 2.7

Low programming voltage helps in reducing power consumption during write processes, making it energy-efficient.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this temperature grade ensures durability and reliability in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, enhancing overall performance in electronic devices.

Parallel or Serial: PARALLEL

Parallel interfacing allows for faster data transfer rates, ideal for applications needing high-speed access.

Terminal Form: J BEND

J bend terminals provide secure connections and ease of manual handling during manufacturing.

Sector Size (Words): 16K

The larger sector size aids in efficient data handling and reduces the time needed for memory management.

Maximum Supply Current: 20 mA

A relatively low maximum supply current can lead to reduced energy costs and improved battery life in portable devices.

No. of Words: 131072 words

This capacity enables the storage of significant amounts of data, useful for a variety of applications.

Toggle Bit: YES

The presence of a toggle bit allows for easier status monitoring and can simplify error handling processes.

Memory Width: 8

An 8-bit memory width is standard, enabling compatibility with a wide range of microcontrollers and hardware.

Terminal Pitch: 1.27 mm

Standard terminal pitch ensures easy soldering and compatibility with various circuit boards.

No. of Words Code: 128K

This specification indicates a significant storage capability, allowing for various applications in embedded systems.

Command User Interface: YES

Features a user-friendly command interface for easier programming and configuration, enhancing usability.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V offers flexibility for high-performance systems while ensuring safe operation.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures prolonged product life and reliability, even in write-intensive applications.

Memory Density: 1048576 bit

The high memory density allows for better data storage efficiency, suitable for high-capacity applications.

Memory IC Type: FLASH

Flash memory technology ensures fast read and write access time, critical for performance-sensitive applications.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current makes the device suitable for power-sensitive applications, prolonging battery life.

Maximum Access Time: 70 ns

A maximum access time of 70 ns enables fast data retrieval, enhancing system responsiveness.

Data Polling: YES

The capability for data polling allows for effective monitoring of memory operations, improving reliability in application performance.

Technical Specifications

Flash Memory M29W010B70K6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29W010B70K6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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