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M50FW040N5G

STMicroelectronics

M50FW040N5G by STMicroelectronics

M50FW040N5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC package, ideal for space-constrained applications. This versatile memory supports dual terminal positioning and operates b/w -20 °C to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip Stock

USA . 15,600 parts In-Stock

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Digiode

USA . 4,638 parts In-Stock

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Vyrian

USA . 2,760 parts In-Stock

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Bristol Electronics

USA . 2,134 parts In-Stock

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Semi Source

USA . 933 parts In-Stock

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933

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Anansix

USA . 128 parts In-Stock

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128

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Velocity Electronics

USA . 114 parts In-Stock

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114

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North Shore Components

USA . 37 parts In-Stock

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IDEA Electronic Components Group

UK . 686 parts In-Stock

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$4.274

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$3.847

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686

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$3.847

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MKK Technologies

India . 1,820 parts In-Stock

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$8.038

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$8.038

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DigiPath Technology Company

USA . 1,820 parts In-Stock

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$8.038

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$8.038

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AZTECH Wire

Italy . 1,069 parts In-Stock

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$8.350

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Component Stockers USA

USA . 471 parts In-Stock

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$99.990

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Kepictronics

USA . 39,848 parts In-Stock

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Assy Fe

Spain . 36,809 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,095 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,063 parts In-Stock

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Corphita

USA . 2,640 parts In-Stock

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Parana Technologies

USA . 781 parts In-Stock

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$5.111

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Microchip USA

USA . 389 parts In-Stock

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Overview

Unlock the power of innovation with the M50FW040N5G Flash Memory from STMicroelectronics! Renowned for its cutting-edge technology and reliability, STMicro delivers unmatched performance in a sleek, compact design. This memory solution excels in diverse applications—from consumer electronics to industrial automation—offering swift access times and low power consumption. Elevate your projects with a trusted partner that prioritizes quality and efficiency, ensuring you stay ahead in today’s fast-paced tech landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers durability and resistance to environmental factors, ensuring reliable performance.

Surface Mount: YES

Allows for easier integration into compact circuit designs, saving board space.

Package Shape: RECTANGULAR

Optimized for efficient layout and space management on PCBs.

Operating Mode: SYNCHRONOUS

Provides faster data transfer rates, improving overall performance.

Nominal Supply Voltage / Vsup: 3.3V

Common voltage value that is widely supported in various applications.

Power Supplies (V): 3.3

Standard voltage requirement simplifies power supply design.

No. of Terminals: 40

Multiple terminals allow for various data and power connections, enhancing versatility.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Space-efficient design ideal for compact electronic devices.

Maximum Operating Temperature: 85 °C

Suitable for various environments, making it applicable in diverse applications.

Organization: 512KX8

Facilitates effective data storage organization, optimizing memory access.

Minimum Operating Temperature: -20 °C

Allows operation in low-temperature environments, expanding usability.

No. of Sectors/Size: 8

Provides flexibility in data management and allocation across sectors.

Terminal Position: DUAL

Improves electrical connection reliability and performance.

Maximum Seated Height: 1.2 mm

Low profile design enables more flexible PCB layouts.

Width: 10 mm

Compact width fits well within limited space designs.

Minimum Supply Voltage (Vsup): 3V

Offers versatility in power supply options, accommodating various designs.

Peak Reflow Temperature °C: 260

High tolerance for manufacturing processes ensuring reliability.

Type: NOR TYPE

Provides fast random access capabilities, which is advantageous for specific applications.

Length: 18.4 mm

Compact dimensions support space-constrained PCB designs.

Programming Voltage (V): 3

Standard programming voltage facilitates compatibility with existing systems.

Technology: CMOS

Low power consumption contributes to energy-efficient operation.

Parallel or Serial: PARALLEL

Allows for higher data throughput, making it suitable for high-performance applications.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability during assembly.

Maximum Supply Current: 60 mA

Balanced current requirement, suitable for a variety of power settings.

No. of Words: 524288 words

Ample storage capacity for data-intensive applications.

Memory Width: 8

Provides a balance between storage capacity and ease of data retrieval.

Terminal Pitch: 0.5 mm

Fine pitch allows for higher density PCB layouts.

No. of Words Code: 512K

Significant memory offers flexibility in data applications.

Command User Interface: YES

Facilitates ease of use and enhances user interaction with the memory.

Ready or Busy: YES

Provides status information, which aids in system management.

Maximum Supply Voltage (Vsup): 3.6 V

Flexible operating voltage allows integration in diverse systems.

Memory Density: 4194304 bit

High density supports extensive data storage needs.

Memory IC Type: FLASH

Non-volatile memory type retains data without power, essential for many applications.

Maximum Standby Current: 0.0001 Amp

Minimal standby power consumption contributes to energy efficiency.

Maximum Access Time: 11 ns

Fast access time enhances performance, particularly for high-speed data applications.

Technical Specifications

Flash Memory M50FW040N5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M50FW040N5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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