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M29F200BB50N3

STMicroelectronics

M29F200BB50N3 by STMicroelectronics

M29F200BB50N3 from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, ideal for automotive applications. It features a max access time of 50 ns, supports up to 100K write/erase cycles, and operates in asynchronous mode. Its compact SOIC package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,294 parts In-Stock

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Digiode

USA . 2,532 parts In-Stock

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2,532

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Anansix

USA . 1,873 parts In-Stock

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1,873

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PC Components Company LLC

USA . 124 parts In-Stock

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Bristol Electronics

USA . 124 parts In-Stock

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124

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,400 parts In-Stock

1+ parts

$4.779

100+ parts

-

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$4.301

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$4.779

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$4.301

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MKK Technologies

India . 1,729 parts In-Stock

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$8.987

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$8.987

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DigiPath Technology Company

USA . 1,729 parts In-Stock

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$8.987

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1,729

$8.987

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AZTECH Wire

Italy . 242 parts In-Stock

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$10.760

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QUARKTWIN TECHNOLOGY LTD

USA . 20,414 parts In-Stock

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Microchip USA

USA . 4,794 parts In-Stock

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Corphita

USA . 2,342 parts In-Stock

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Parana Technologies

USA . 327 parts In-Stock

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$5.714

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Overview

Unlock exceptional performance with the M29F200BB50N3 Flash Memory from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for reliability and versatility, this high-quality NOR flash memory excels in automotive applications, ensuring durability in demanding environments. With impressive endurance and fast access times, it empowers your projects with seamless data management, enabling rapid development and enhanced efficiency at every turn. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, making the product suitable for various applications.

Surface Mount: YES

Allows for compact designs and automated assembly processes.

Package Shape: RECTANGULAR

Optimizes space usage on PCBs, providing flexibility in layout.

Operating Mode: ASYNCHRONOUS

Ensures faster data access, enhancing performance in various applications.

Nominal Supply Voltage / Vsup: 5 V

Common voltage level simplifies integration into existing systems.

Power Supplies (V): 5

Standard power requirement for easy compatibility with many devices.

No. of Terminals: 48

Provides ample connection points for versatile applications and functionalities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Ideal for space-constrained designs, allowing for more compact electronics.

Alternate Memory Width: 8

Enhances compatibility with various systems that utilize 8-bit memory architectures.

Maximum Operating Temperature: 125 °C

High temperature tolerance makes it suitable for harsh environmental conditions.

Organization: 128KX16

Allows efficient memory organization, facilitating better data management.

Minimum Operating Temperature: -40 °C

Robust performance in extreme cold environments, ideal for automotive applications.

No. of Sectors/Size: 1,2,1,3

Flexible sector sizing supports various application needs.

Terminal Finish: TIN LEAD

Offers reliable solderability and corrosion resistance for durable connections.

Terminal Position: DUAL

Facilitates easier connections and integration into diverse circuit layouts.

Maximum Seated Height: 1.2 mm

Thin profile enhances compatibility with low-profile designs.

Width: 12 mm

Compact width contributes to smaller overall board size.

Minimum Supply Voltage (Vsup): 4.5 V

Broad operating voltage range enables flexibility in the design.

Type: NOR TYPE

Offers fast read times and is ideal for applications requiring low latency.

Length: 18.4 mm

Compact length supports space-efficient PCB layouts.

Programming Voltage (V): 5

Standard programming voltage simplifies integration into existing systems.

Temperature Grade: AUTOMOTIVE

Designed to withstand the rigors of automotive applications, ensuring reliability.

Technology: CMOS

Low power consumption and high speed make CMOS technology desirable for many applications.

Parallel or Serial: PARALLEL

Offers faster data transfer rates suitable for demanding applications.

Terminal Form: GULL WING

Common form factor eases manufacturing and assembly processes.

Sector Size (Words): 16K, 8K, 32K, 64K

Allows flexibility in memory allocation for diverse application requirements.

Maximum Supply Current: 20 mA

Low current consumption supports energy-efficient designs.

No. of Words: 131072 words

Provides sufficient storage capacity for a wide range of applications.

Toggle Bit: YES

Enables efficient memory management and data manipulation.

Memory Width: 16

Supports 16-bit data paths for enhanced performance in data processing.

Terminal Pitch: 0.5 mm

Fine pitch enhances compactness and accommodates more connections in smaller areas.

No. of Words Code: 128K

Offers ample memory size for embedded applications.

Command User Interface: YES

User-friendly interface simplifies memory configuration and operation.

Ready or Busy: YES

Provides clear status indication, allowing for accurate timing in data operations.

Maximum Supply Voltage (Vsup): 5.5 V

Flexible voltage range enhances compatibility with various systems.

Endurance: 100000 Write/Erase Cycles

High endurance supports long-term reliability in applications with frequent updates.

Boot Block: BOTTOM

Supports secure and efficient system boot configurations.

Memory Density: 2097152 bit

High density allows for more data storage in a compact module.

Memory IC Type: FLASH

Non-volatile memory type retains data without power, ideal for reliable storage.

Maximum Standby Current: 0.0001 Amp

Very low standby current enhances overall energy efficiency.

Maximum Access Time: 50 ns

Fast access time improves system performance in data-intensive applications.

Data Polling: YES

Enables real-time data monitoring and enhances operational responsiveness.

Technical Specifications

Flash Memory M29F200BB50N3 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

50 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F200BB50N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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