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M29W200BT70N6E

STMicroelectronics

M29W200BT70N6E by STMicroelectronics

M29W200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,461 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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7,461

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Anansix

USA . 1,571 parts In-Stock

1+ parts

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1,571

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Digiode

USA . 812 parts In-Stock

1+ parts

-

100+ parts

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812

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,284 parts In-Stock

1+ parts

$1.846

100+ parts

-

1k+ parts

$1.661

10k+ parts

-

2,284

$1.846

-

$1.661

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MKK Technologies

India . 711 parts In-Stock

1+ parts

$3.470

100+ parts

-

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-

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711

$3.470

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DigiPath Technology Company

USA . 711 parts In-Stock

1+ parts

$3.470

100+ parts

-

1k+ parts

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-

711

$3.470

-

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AZTECH Wire

Italy . 1,043 parts In-Stock

1+ parts

$19.450

100+ parts

-

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1,043

$19.450

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-

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Corphita

USA . 4,737 parts In-Stock

1+ parts

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4,737

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Parana Technologies

USA . 1,974 parts In-Stock

1+ parts

-

100+ parts

$2.207

1k+ parts

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1,974

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$2.207

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Microchip USA

USA . 439 parts In-Stock

1+ parts

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439

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Cyclops Electronics Ltd (Excess)

UK . 114 parts In-Stock

1+ parts

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114

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Overview

Unlock the power of innovation with the M29W200BT70N6E Flash Memory from STMicroelectronics—a leader in high-performance semiconductor solutions. Designed for reliability and efficiency, this versatile memory device delivers exceptional endurance and fast access times, making it perfect for a range of applications from industrial automation to consumer electronics. Experience unmatched quality backed by ST’s commitment to excellence, ensuring your projects run smoothly and effectively!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body offers durability and environmental resistance, making the flash memory suitable for various applications.

Surface Mount: YES

Surface mount technology allows for efficient space-saving designs and easier integration into compact electronic devices.

Package Shape: RECTANGULAR

The rectangular shape enhances compatibility with PCB layouts, ensuring a compact and efficient design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler control signals and faster data access, beneficial for performance-critical applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V optimizes power consumption while ensuring compatibility with most modern electronic systems.

Power Supplies (V): 3/3.3

Supports a range of power supply voltages, providing flexibility in system design and integration.

No. of Terminals: 48

A higher number of terminals allows for more data lines and features, enhancing the overall functionality of the memory.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and small outline make this flash memory ideal for space-constrained applications.

Alternate Memory Width: 8

An alternate memory width option supports versatile applications and more efficient data handling.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliability and performance in industrial applications.

Organization: 128KX16

The organization of memory allows for efficient data management and ease of integration in various systems.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures makes this flash memory suitable for extreme environments.

No. of Sectors/Size: 1,2,1,3

Flexible sector sizes provide versatility in memory management and usage scenarios.

Terminal Finish: MATTE TIN/TIN BISMUTH

The terminal finish enhances solderability and reduces oxidation, ensuring stable connections.

Terminal Position: DUAL

Dual terminal position enables better layout options for board design, facilitating easier integration.

Maximum Seated Height: 1.2 mm

A low seated height supports slim designs while maintaining performance and reliability.

Width: 12 mm

Compact width aids in efficient use of PCB space in modern electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

This low minimum supply voltage increases compatibility with various power sources.

Maximum Time At Peak Reflow Temperature (s): 40

A manageable time at peak reflow allows for efficient manufacturing processes.

Peak Reflow Temperature °C: 260

The high reflow temperature ensures robustness during the soldering process.

Type: NOR TYPE

NOR type architecture enables fast random access and efficient reading operations.

Length: 20 mm

The optimal length supports flexible design options and efficient use of space.

Programming Voltage (V): 2.7

A low programming voltage minimizes power consumption during data writing, enhancing overall efficiency.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in challenging environments.

Technology: CMOS

CMOS technology offers low power consumption and high density, making this memory efficient.

Parallel or Serial: PARALLEL

Parallel access allows for higher data throughput, boosting the performance in data-intensive applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and enhance mechanical stability.

Sector Size (Words): 16K, 8K, 32K, 64K

Variety in sector sizes provides flexibility in programming and memory management.

Maximum Supply Current: 20 mA

A low supply current ensures energy efficiency, ideal for battery-operated devices.

No. of Words: 131072 words

High word count capacity allows for significant data storage suitable for various applications.

Toggle Bit: YES

Support for toggle bits enhances data integrity checking and reliable data access.

Memory Width: 16

16-bit memory width supports efficient data handling and processing capabilities.

Terminal Pitch: 0.5 mm

A fine terminal pitch allows for a higher density of connections on the PCB, ideal for compact designs.

No. of Words Code: 128K

The memory's code specifications provide clarity on data organization and usage.

Command User Interface: YES

A user-friendly command interface simplifies integration and programming for developers.

Ready or Busy: YES

The capability to indicate readiness or busy state improves control handling in high-speed applications.

Maximum Supply Voltage (Vsup): 3.6 V

Support of a modest maximum supply voltage enhances compatibility with various electronic circuits.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures the longevity of the memory, suitable for write-intensive applications.

Boot Block: TOP

A top boot block configuration offers easier firmware updates and secure boot processes.

Memory Density: 2097152 bit

High memory density provides ample storage in a compact footprint for diverse applications.

Memory IC Type: FLASH

Flash memory type allows for non-volatile storage, ensuring data retention without power.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current optimizes power consumption, beneficial for portable devices.

Maximum Access Time: 70 ns

Fast access time improves responsiveness and efficiency in data-intensive applications.

Data Polling: YES

Support for data polling enhances data retrieval accuracy and reliability.

Technical Specifications

Flash Memory M29W200BT70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

20 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29W200BT70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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