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M29F200BT70N6E

STMicroelectronics

M29F200BT70N6E by STMicroelectronics

M29F200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for industrial applications. With dual terminals and a wide temp range (-40 °C to 85 °C), it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,134 parts In-Stock

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4,134

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Digiode

USA . 1,831 parts In-Stock

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1,831

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Anansix

USA . 870 parts In-Stock

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870

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IDEA Electronic Components Group

UK . 1,513 parts In-Stock

1+ parts

$5.479

100+ parts

-

1k+ parts

$4.931

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1,513

$5.479

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$4.931

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AZTECH Wire

Italy . 721 parts In-Stock

1+ parts

$10.110

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721

$10.110

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MKK Technologies

India . 1,361 parts In-Stock

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$10.302

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1,361

$10.302

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DigiPath Technology Company

USA . 1,361 parts In-Stock

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$10.302

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1,361

$10.302

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Microchip USA

USA . 7,974 parts In-Stock

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7,974

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Corphita

USA . 2,301 parts In-Stock

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2,301

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Parana Technologies

USA . 2,285 parts In-Stock

1+ parts

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$6.550

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2,285

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$6.550

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QUARKTWIN TECHNOLOGY LTD

USA . 2,229 parts In-Stock

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2,229

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Overview

Elevate your designs with the M29F200BT70N6E from STMicroelectronics, a leader in high-quality flash memory solutions. This innovative NOR flash memory offers unparalleled reliability and adaptability for various applications, from industrial automation to consumer electronics. With its robust performance in extreme temperatures and impressive endurance, it ensures longevity and efficiency, empowering you to create cutting-edge products that stand out in today's competitive market. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ideal for a wide range of applications.

Surface Mount: YES

Facilitates easy integration into modern PCB designs, saving space and enabling faster assembly.

Package Shape: RECTANGULAR

Standard shape that fits well in most electronic designs, enabling efficient layout.

Operating Mode: ASYNCHRONOUS

Allows for increased performance by enabling quicker access to memory without clock synchronization.

Nominal Supply Voltage / Vsup (V): 5

Common voltage level simplifies power supply design and compatibility.

Power Supplies (V): 5

Consistent power requirements make this memory easy to implement across various devices.

No. of Terminals: 48

Offers ample connection points for robust integration and flexibility in design.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Space-efficient design ideal for compact and high-density circuit boards.

Alternate Memory Width: 8

Compatible with various system architectures, improving design versatility.

Maximum Operating Temperature: 85 °C

Designed for industrial applications, ensuring reliability in higher temperature environments.

Organization: 128KX16

Provides structured memory management suited for demanding applications.

Minimum Operating Temperature: -40 °C

Ensures performance in extreme low-temperature conditions, suitable for industrial use.

No. of Sectors/Size: 1,2,1,3

Flexible sector organization caters to diverse application needs.

Terminal Finish: MATTE TIN/TIN BISMUTH

Provides excellent solderability and resistance to corrosion, enhancing longevity.

Terminal Position: DUAL

Facilitates easy mounting and improves electrical contact reliability.

Maximum Seated Height: 1.2 mm

Low-profile design supports compact assemblies without compromising performance.

Width: 12 mm

Compact width allows for efficient space utilization on PCBs.

Minimum Supply Voltage (Vsup): 4.5 V

Provides flexibility in power supply design for various applications.

Maximum Time At Peak Reflow Temperature (s): 40

Resilient design tolerates standard soldering processes without damage.

Peak Reflow Temperature °C: 260

High-temperature tolerance aids in compatibility with modern assembly techniques.

Type: NOR TYPE

Offers fast random access which is beneficial for certain applications requiring quick data retrieval.

Length: 18.4 mm

Compact length facilitates small footprint designs.

Programming Voltage (V): 5

Standard voltage simplifies programming in various systems.

Temperature Grade: INDUSTRIAL

Delivers reliable performance under demanding environmental conditions.

Technology: CMOS

Low power consumption technology that enhances overall efficiency.

Parallel or Serial: PARALLEL

Allows faster data transfer rates, making it suitable for high-performance applications.

Terminal Form: GULL WING

Simplifies soldering and provides good mechanical strength.

Sector Size (Words): 16K,8K,32K,64K

Flexible sector configuration optimizes memory for different use cases.

Maximum Supply Current: 20 mA

Low current requirements enable energy-efficient designs.

No. of Words: 131072 words

Large memory capacity allows for complex applications and data storage.

Toggle Bit: YES

Provides additional control features for improved memory management.

Memory Width: 16

Wider data path allows for increased throughput and faster performance.

Terminal Pitch: 0.5 mm

Compact pitch supports higher density component placement on PCBs.

No. of Words Code: 128K

Suitable for a variety of applications that require substantial memory resources.

Command User Interface: YES

User-friendly interface streamlines programming and operations.

Ready or Busy: YES

Provides status indication that can simplify system design.

Maximum Supply Voltage (Vsup): 5.5 V

Flexibility in operation voltages accommodates a wider range of applications.

Endurance: 100000 Write/Erase Cycles

High endurance makes this memory reliable for repeated use in applications.

Boot Block: TOP

Enables reliable storage of critical boot information for device initialization.

Memory Density: 2097152 bit

High density offers significant storage capacity for various applications.

Memory IC Type: FLASH

Flash memory technology is versatile and widely supported in modern electronics.

Maximum Standby Current: 0.0001 Amp

Low standby current extends battery life in low-power applications.

Maximum Access Time: 70 ns

Fast access time enhances performance for demanding applications.

Data Polling: YES

Facilitates efficient data management and ensures accurate reading of memory status.

Technical Specifications

Flash Memory M29F200BT70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F200BT70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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