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M50FW040NB5G

STMicroelectronics

M50FW040NB5G by STMicroelectronics

M50FW040NB5G from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a compact SOIC-32 package, ideal for space-constrained applications. With a temp range of -20 °C to 85 °C, it's perfect for industrial use.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,006 parts In-Stock

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6,006

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Anansix

USA . 1,643 parts In-Stock

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1,643

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Digiode

USA . 819 parts In-Stock

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819

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IDEA Electronic Components Group

UK . 2,289 parts In-Stock

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$4.215

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-

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$3.793

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$4.215

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$3.793

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MKK Technologies

India . 2,236 parts In-Stock

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$7.925

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2,236

$7.925

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DigiPath Technology Company

USA . 2,236 parts In-Stock

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$7.925

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2,236

$7.925

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AZTECH Wire

Italy . 903 parts In-Stock

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$12.670

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903

$12.670

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Component Stockers USA

USA . 591 parts In-Stock

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$99.990

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 12,540 parts In-Stock

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Corphita

USA . 2,845 parts In-Stock

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Parana Technologies

USA . 549 parts In-Stock

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$5.039

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549

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Microchip USA

USA . 393 parts In-Stock

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Overview

Unlock unparalleled performance with the M50FW040NB5G flash memory from STMicroelectronics, a trusted leader in innovative semiconductor solutions. Designed for efficiency and reliability, this compact memory module is ideal for a wide array of applications, from consumer electronics to industrial devices. Experience superior speed, low power consumption, and robust durability, empowering your designs with enhanced functionality and longevity. Elevate your projects with the unmatched quality and expertise that STMicroelectronics brings to every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material provides reliable protection and ensures the device can withstand environmental stresses.

Surface Mount: YES

Compatible with modern manufacturing processes, enabling efficient assembly and offering a smaller footprint.

Package Shape: RECTANGULAR

Optimal shape for space efficiency, allowing easy integration into compact designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data access and improved performance compared to asynchronous alternatives.

Nominal Supply Voltage / Vsup (V): 3.3

Common voltage level ensures compatibility with a wide range of devices and systems.

Power Supplies (V): 3.3

Stable voltage supply enhances operation stability and energy efficiency.

No. of Terminals: 32

Ample terminals provide flexibility in connections and more functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Thin profile design saves space in PCB layouts, making it ideal for modern electronics.

Maximum Operating Temperature: 85 °C

Wide operating temperature range supports operation in diverse environmental conditions.

Organization: 512KX8

Large organization supports significant data storage, enhancing usability in various applications.

Minimum Operating Temperature: -20 °C

Can function in low-temperature conditions, making it suitable for a range of environments.

No. of Sectors/Size: 8

Multiple sectors enhance data management and organization capabilities.

Terminal Finish: TIN/TIN BISMUTH

Provides excellent solderability and long-term reliability for connections.

Terminal Position: DUAL

Dual terminal positions enhance layout flexibility on PCBs.

Maximum Seated Height: 1.2 mm

Compact height allows for efficient use in slim designs and crowded layouts.

Width: 8 mm

Compact width contributes to space-saving on printed circuit boards.

Minimum Supply Voltage (Vsup): 3 V

Allows for more flexible operation with various power sources.

Type: NOR TYPE

NOR flash memory is known for faster read speeds, making it ideal for applications needing quick access.

Length: 14 mm

Short length aids in compact designs, facilitating easier integration into smaller devices.

Programming Voltage (V): 3

Maintains compatibility with standard logic levels, ensuring easy integration.

Technology: CMOS

CMOS technology offers low power consumption and high reliability.

Parallel or Serial: PARALLEL

Parallel interface enhances throughput and maximizes data transfer rates.

Terminal Form: GULL WING

Gull wing terminals improve solder joint strength and reliability during the assembly process.

Maximum Supply Current: 60 mA

Moderate supply current helps in managing power consumption effectively.

No. of Words: 524288 words

Large word count allows for significant memory storage capacity for applications.

Memory Width: 8

8-bit width facilitates efficient data handling and processing.

Terminal Pitch: 0.5 mm

Narrow terminal pitch allows for high-density packaging on circuit boards.

No. of Words Code: 512K

High code capacity supports applications requiring substantial data storage.

Command User Interface: YES

User-friendly command interface simplifies operations and integration into different systems.

Ready or Busy: YES

Ready/busy status indication enhances control during read/write operations.

Maximum Supply Voltage (Vsup): 3.6 V

Provides a margin for operational voltage variances, ensuring stable performance.

Memory Density: 4194304 bit

High memory density supports a variety of demanding applications and data storage needs.

Memory IC Type: FLASH

Flash memory offers non-volatile storage, making it suitable for applications that require data retention.

Maximum Standby Current: 0.0001 Amp

Very low standby current signifies high energy efficiency, important for battery-powered applications.

Maximum Access Time: 11 ns

Fast access time ensures quick data retrieval, enhancing the overall system performance.

Technical Specifications

Flash Memory M50FW040NB5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

14 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M50FW040NB5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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