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M29W040B70N6E

STMicroelectronics

M29W040B70N6E by STMicroelectronics

M29W040B70N6E from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, ideal for industrial applications. It features an asynchronous operating mode, 70 ns max access time, and supports up to 100K write/erase cycles. Its compact SOIC package ensures efficient space utilization in designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,078 parts In-Stock

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Anansix

USA . 118 parts In-Stock

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Digiode

USA . 105 parts In-Stock

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IDEA Electronic Components Group

UK . 1,692 parts In-Stock

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$3.986

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$3.588

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MKK Technologies

India . 975 parts In-Stock

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$7.496

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DigiPath Technology Company

USA . 975 parts In-Stock

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$7.496

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AZTECH Wire

Italy . 37 parts In-Stock

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$22.010

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Component Stockers USA

USA . 200 parts In-Stock

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$99.990

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Perfect Parts

USA . 6,051 parts In-Stock

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Corphita

USA . 3,046 parts In-Stock

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Parana Technologies

USA . 1,164 parts In-Stock

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Microchip USA

USA . 486 parts In-Stock

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Assy Fe

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Overview

Unlock the potential of your next project with the M29W040B70N6E Flash Memory from STMicroelectronics. Renowned for its cutting-edge technology and reliability, STMicroelectronics offers a robust solution that seamlessly fits into diverse applications—from industrial automation to consumer electronics. With exceptional endurance and performance in extreme temperatures, this memory chip ensures efficiency and longevity, empowering you to elevate your designs and deliver unparalleled value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides protection against environmental factors, contributing to the longevity of the memory device.

Surface Mount: YES

Surface mount technology allows for compact designs, making it ideal for space-constrained applications.

Package Shape: RECTANGULAR

Rectangular packaging maximizes the efficient use of board space and facilitates easier soldering.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and simpler control sequences, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V is optimal for modern electronics, reducing power consumption while ensuring compatibility with other components.

Power Supplies (V): 3/3.3

Support for a range of supply voltages increases versatility in various applications.

No. of Terminals: 32

The 32-terminal configuration facilitates a wide range of I/O connections, improving device connectivity.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Thin profile design enables space-saving in compact electronic devices, enhancing design flexibility.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability in a variety of operating environments.

Organization: 512KX8

The organization of the memory allows for efficient data storage and retrieval, making it suitable for high-performance applications.

Minimum Operating Temperature: -40 °C

The capability to operate at low temperatures expands the range of applications, especially in harsh environments.

No. of Sectors/Size: 8

Multiple sectors allow for more organized data management and improved performance in applications requiring data segmentation.

Terminal Finish: TIN/TIN BISMUTH

Quality terminal finish ensures strong electrical connections and enhances solderability, contributing to device reliability.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout options, simplifying the design process.

Maximum Seated Height: 1.2 mm

Low height profile ensures compatibility with slim devices, making it an excellent choice for modern electronics.

Width: 8 mm

Compact width contributes to space efficiency on PCBs, allowing more components to fit into smaller areas.

Minimum Supply Voltage (Vsup): 2.7 V

Lower supply voltage minimizes power consumption, making it suitable for battery-operated devices.

Type: NOR TYPE

NOR flash memory is known for its fast read speeds, making it ideal for applications that require quick data access.

Length: 18.4 mm

Optimized length accommodates compact designs while delivering robust performance, enhancing application versatility.

Programming Voltage (V): 2.7

Low programming voltage reduces the risk of damage to sensitive components, ensuring data integrity.

Temperature Grade: INDUSTRIAL

Industrial grade certification means the product is built to withstand extreme conditions, suitable for critical applications.

Technology: CMOS

The use of CMOS technology allows for lower power consumption and higher density, relevant for modern memory requirements.

Parallel or Serial: PARALLEL

Parallel interfaces enable faster data transfer rates, improving overall system performance in high-speed applications.

Terminal Form: GULL WING

Gull-wing terminals provide excellent soldering characteristics and mechanical stability in assembly.

Sector Size (Words): 64K

A sector size of 64K allows for effective data organization and faster access times.

Maximum Supply Current: 20 mA

Low maximum supply current helps reduce power usage in applications where energy efficiency is critical.

No. of Words: 524288 words

The large number of words provides substantial storage capacity, suitable for data-heavy applications.

Toggle Bit: YES

The presence of a toggle bit helps with error detection during data transmission, enhancing reliability.

Memory Width: 8

An 8-bit memory width aligns well with common data bus architectures, ensuring compatibility with a variety of systems.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for high-density layouts, improving the performance of small form factor devices.

No. of Words Code: 512K

This memory size is ideal for a variety of applications, from embedded systems to consumer electronics.

Command User Interface: YES

A user-friendly command interface simplifies integration and programming, reducing time-to-market for developers.

Maximum Supply Voltage (Vsup): 3.6 V

The ability to support up to 3.6V adds flexibility for different system requirements and potential future upgrades.

Endurance: 100000 Write/Erase Cycles

High endurance ratings ensure longevity and reliability in data storage applications, crucial for mission-critical systems.

Memory Density: 4194304 bit

High memory density allows for considerable storage in a compact form factor, making it suitable for advanced applications.

Memory IC Type: FLASH

Flash memory technology enables fast read/write cycles and retention of data without power, making it versatile for various applications.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current maximizes battery life in portable applications, making it efficient for mobile devices.

Maximum Access Time: 70 ns

Fast access time enhances system performance by reducing latency in data retrieval.

Data Polling: YES

Data polling capability enhances the reliability of data processes, ensuring accurate reads during operations.

Technical Specifications

Flash Memory M29W040B70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29W040B70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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