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M29F200BB70M6E

STMicroelectronics

M29F200BB70M6E by STMicroelectronics

M29F200BB70M6E from STMicroelectronics is a 2Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with a temp range of -40 °C to 85°C and offers 100K write/erase cycles. This compact SOIC package ensures efficient data storage in embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 5,255 parts In-Stock

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Vyrian

USA . 3,503 parts In-Stock

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Digiode

USA . 3,337 parts In-Stock

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3,337

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Infinite Electronics LLP

India . 1,088 parts In-Stock

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Anansix

USA . 604 parts In-Stock

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Pegasus Components GmbH

Germany . 41 parts In-Stock

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IDEA Electronic Components Group

UK . 1,457 parts In-Stock

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$5.394

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$4.855

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$5.394

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$4.855

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MKK Technologies

India . 1,064 parts In-Stock

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$10.143

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$10.143

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DigiPath Technology Company

USA . 1,064 parts In-Stock

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$10.143

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$10.143

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AZTECH Wire

Italy . 598 parts In-Stock

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$20.270

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Microchip USA

USA . 2,620 parts In-Stock

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Parana Technologies

USA . 1,487 parts In-Stock

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$6.449

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Corphita

USA . 196 parts In-Stock

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Overview

Unlock exceptional performance with the M29F200BB70M6E Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for industrial applications, this reliable NOR flash memory offers robust endurance, ensuring longevity and stability. With its compact size and asynchronous operation, it seamlessly integrates into your designs, enhancing efficiency and reducing power consumption. Trust STMicroelectronics to deliver quality and innovation that drives your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliability and longevity in various applications.

Surface Mount: YES

Facilitates efficient PCB space utilization and allows for automated assembly processes.

Package Shape: RECTANGULAR

Optimizes space on PCBs, making it ideal for compact designs.

Operating Mode: ASYNCHRONOUS

Provides faster access times compared to synchronous memory, enhancing system performance.

Nominal Supply Voltage / Vsup (V): 5

Standard operating voltage ensures compatibility with a wide range of electronics.

Power Supplies (V): 5

Simplifies the design by using a common voltage for various components.

No. of Terminals: 44

Offers ample connectivity options for data and control signals, enhancing functionality.

Package Style (Meter): SMALL OUTLINE

Compact form factor is ideal for space-constrained applications.

Alternate Memory Width: 8

Supports diverse configurations suitable for various applications.

Maximum Operating Temperature: 85 °C

Ideal for industrial applications where high temperatures might be encountered.

Organization: 128KX16

Enables efficient data organization and access patterns.

Minimum Operating Temperature: -40 °C

Suitable for harsh environments and industrial applications.

No. of Sectors/Size: 1,2,1,3

Flexibility in sector organization enhances the functionality for various use cases.

Terminal Finish: MATTE TIN

Provides corrosion resistance and longevity in various operating conditions.

Terminal Position: DUAL

Allows for efficient mounting and better signal integrity.

Maximum Seated Height: 3 mm

Low-profile design aids in compact electronic designs.

Width: 12.6 mm

Compact width fits seamlessly into limited space applications.

Minimum Supply Voltage (Vsup): 4.5 V

Offers flexibility in power supply options.

Type: NOR TYPE

Ideal for applications requiring random access and fast read speeds.

Length: 28.5 mm

Compact size enables space-saving designs.

Programming Voltage (V): 5

Standard voltage requirement simplifies design considerations for engineers.

Temperature Grade: INDUSTRIAL

Guaranteed performance in extreme conditions ensures reliability in critical applications.

Technology: CMOS

Low power consumption, making it energy-efficient for battery-operated devices.

Parallel or Serial: PARALLEL

Faster data transfer rates compared to serial options, improving overall system performance.

Terminal Form: GULL WING

Enhances soldering reliability and improves thermal performance.

Sector Size (Words): 16K, 8K, 32K, 64K

Versatile sector sizes support a range of applications and requirements.

Maximum Supply Current: 20 mA

Low power consumption aids in energy efficiency for the system.

No. of Words: 131072 words

Delivers substantial storage capacity for applications requiring large memory.

Toggle Bit: YES

Simplifies debugging and enhances overall reliability.

Memory Width: 16

Allows for efficient data handling and improved performance in various applications.

Terminal Pitch: 1.27 mm

Compatible with standard PCB connects, making it easy to integrate.

No. of Words Code: 128K

Denotes a sizeable memory capacity for versatile applications.

Command User Interface: YES

Provides more straightforward control and operation of the memory device.

Ready or Busy: YES

Offers status feedback, ensuring efficient and effective data operations.

Maximum Supply Voltage (Vsup): 5.5 V

Accommodates slight voltage fluctuations within standard operating limits.

Endurance: 100000 Write/Erase Cycles

Robust endurance means reliable long-term usage, suitable for data logging applications.

Boot Block: BOTTOM

Optimizes boot-up performance by allowing critical code storage.

Memory Density: 2097152 bit

High density ensures ample storage for complex applications.

Memory IC Type: FLASH

Benefits from non-volatility and fast read/write capabilities, appropriate for a wide range of applications.

Maximum Standby Current: 0.0001 Amp

Minimizes power consumption when idle, extending battery life in portable devices.

Maximum Access Time: 70 ns

Fast access time improves system responsiveness and overall performance.

Data Polling: YES

Allows for efficient monitoring of memory status, enhancing operational control.

Technical Specifications

Flash Memory M29F200BB70M6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

28.5 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

44

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

3 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12.6 mm

Trade Compliance

M29F200BB70M6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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