Loading...

M50FLW040BN5G

STMicroelectronics

M50FLW040BN5G by STMicroelectronics

M50FLW040BN5G from STMicroelectronics is a 4Mbit NOR Flash memory with a 3.3V supply, featuring an 11ns max access time and operating in synchronous mode. It comes in a thin profile SO package, ideal for compact applications. With -20 °C to 85 °C temp range, it's perfect for various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,992 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,992

-

-

-

-

Vyrian

USA . 3,488 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,488

-

-

-

-

Anansix

USA . 830 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

830

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 133 parts In-Stock

1+ parts

$5.370

100+ parts

-

1k+ parts

$4.833

10k+ parts

-

133

$5.370

-

$4.833

-

MKK Technologies

India . 1,102 parts In-Stock

1+ parts

$10.098

100+ parts

-

1k+ parts

-

10k+ parts

-

1,102

$10.098

-

-

-

DigiPath Technology Company

USA . 1,102 parts In-Stock

1+ parts

$10.098

100+ parts

-

1k+ parts

-

10k+ parts

-

1,102

$10.098

-

-

-

AZTECH Wire

Italy . 678 parts In-Stock

1+ parts

$12.040

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$12.040

-

-

-

Corphita

USA . 3,372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,372

-

-

-

-

Parana Technologies

USA . 1,763 parts In-Stock

1+ parts

-

100+ parts

$6.421

1k+ parts

-

10k+ parts

-

1,763

-

$6.421

-

-

Microchip USA

USA . 330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

330

-

-

-

-

Overview

Unlock unparalleled performance with the M50FLW040BN5G Flash Memory from STMicroelectronics, a leader in cutting-edge technology. This compact and efficient solution ensures rapid data access for various applications, from consumer electronics to automotive systems. Experience the durability and reliability associated with ST's commitment to quality, empowering your designs with low power consumption and high-speed operation. Elevate your projects with a memory solution you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliable performance in various operating conditions.

Surface Mount: YES

Surface mount technology enables compact design and easy integration into modern electronic devices.

Package Shape: RECTANGULAR

Standard shape facilitates efficient use of PCB space and simplifies design layout.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances performance by allowing faster data transfer speeds.

Nominal Supply Voltage / Vsup (V): 3.3

Standard operating voltage provides compatibility with a wide range of electronic systems.

Power Supplies (V): 3.3

Single voltage requirement simplifies power supply design and minimizes power consumption.

No. of Terminals: 40

Adequate number of terminals allows for versatile connections and functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Thin profile design helps save space in compact applications, ideal for portable devices.

Maximum Operating Temperature: 85 °C

High operating temperature range makes it suitable for use in varied environmental conditions.

Organization: 512KX8

Provides efficient data organization and retrieval, optimizing the memory performance.

Minimum Operating Temperature: -20 °C

Wide temperature range ensures reliable performance in extreme conditions.

No. of Sectors/Size: 8

Multiple sectors allow for organized data management and efficient storage usage.

Terminal Position: DUAL

Dual terminal positioning supports flexible mounting options for better PCB design.

Maximum Seated Height: 1.2 mm

Low profile design enhances space-saving capabilities and supports compact layouts.

Width: 8 mm

Compact width fits well into modern, space-constrained electronic designs.

Minimum Supply Voltage (Vsup): 3 V

Low voltage operation allows for greater energy efficiency and longer battery life.

Peak Reflow Temperature °C: 260

High peak temperature tolerance supports robust assembly processes during manufacturing.

Type: NOR TYPE

NOR type architecture allows for fast random access and efficient read speeds.

Length: 18.4 mm

Compact length ensures compatibility with space-efficient designs.

Programming Voltage (V): 3

Compatible programming voltage simplifies the circuit design and reduces complexity.

Technology: CMOS

CMOS technology provides low power consumption and high density, making it ideal for portable devices.

Parallel or Serial: PARALLEL

Parallel operation allows for high-speed data transfers, making it suitable for performance-critical applications.

Terminal Form: GULL WING

Gull wing design facilitates automated assembly and ensures a strong mechanical bond.

Maximum Supply Current: 60 mA

Moderate supply current supports efficient power management in battery-operated devices.

No. of Words: 524288 words

Large word count allows for substantial data storage capability, meeting diverse application requirements.

Memory Width: 8

8-bit memory width is standard for many applications, providing balanced performance and efficiency.

Terminal Pitch: 0.5 mm

Fine terminal pitch supports high-density board layouts, crucial for modern device miniaturization.

No. of Words Code: 512K

512K words offers ample data storage for a variety of applications, from consumer electronics to industrial systems.

Command User Interface: YES

User-friendly command interface allows for easy integration and control in software applications.

Ready or Busy: YES

Ready/busy indication streamlines data flow, ensuring reliable communication with host systems.

Maximum Supply Voltage (Vsup): 3.6 V

Flexible voltage range supports compatibility with various power supply designs.

Memory Density: 4194304 bit

Significant memory density enhances data storage efficiency, making it suitable for high-capacity applications.

Memory IC Type: FLASH

Flash memory type offers rapid access and reprogramming capabilities, ideal for a broad range of uses.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current maximizes energy efficiency, particularly in battery-powered devices.

Maximum Access Time: 11 ns

Fast access time ensures quick data retrieval and enhances overall system performance.

Technical Specifications

Flash Memory M50FLW040BN5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G40

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

40

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M50FLW040BN5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20