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M29F800DT70M6E

STMicroelectronics

M29F800DT70M6E by STMicroelectronics

M29F800DT70M6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design, operates in asynchronous mode, and supports industrial temperature ranges (-40 °C to 85°C). Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,222 parts In-Stock

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Anansix

USA . 1,288 parts In-Stock

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1,288

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Digiode

USA . 69 parts In-Stock

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69

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IDEA Electronic Components Group

UK . 1,856 parts In-Stock

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$3.560

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$3.204

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$3.560

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MKK Technologies

India . 761 parts In-Stock

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$6.695

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761

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DigiPath Technology Company

USA . 761 parts In-Stock

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$6.695

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761

$6.695

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AZTECH Wire

Italy . 1,216 parts In-Stock

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$17.620

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$17.620

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QUARKTWIN TECHNOLOGY LTD

USA . 11,775 parts In-Stock

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Microchip USA

USA . 5,361 parts In-Stock

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Corphita

USA . 3,194 parts In-Stock

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Parana Technologies

USA . 2,286 parts In-Stock

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$4.257

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$4.257

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Overview

Unlock unparalleled performance with the M29F800DT70M6E from STMicroelectronics, a leader in innovative flash memory solutions. This robust, industrial-grade NOR flash memory is engineered for reliability across diverse applications, ensuring your designs achieve optimal efficiency. With its compact form factor and asynchronous operation, it offers exceptional speed and power management, making it the ideal choice for advanced electronics in automotive, aerospace, and industrial sectors. Elevate your projects with ST's commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material provides protection, ensuring reliable performance in various environments.

Surface Mount: YES

Facilitates compact PCB designs and enhances assembly efficiency.

Package Shape: RECTANGULAR

Standard shape allows easy integration into circuit layouts.

Operating Mode: ASYNCHRONOUS

Enables faster access times and simplifies control, enhancing performance.

Nominal Supply Voltage / Vsup (V): 5

Standard operating voltage compatibility reduces system design complexity.

Power Supplies (V): 5

Single voltage supply simplifies power management in embedded systems.

No. of Terminals: 44

Sufficient terminals provide flexibility for I/O connections and signal routing.

Package Style (Meter): SMALL OUTLINE

Compact size allows for space-efficient installation in electronic devices.

Alternate Memory Width: 8

Supports different memory widths for versatile application use.

Maximum Operating Temperature: 85 °C

Supports high-temperature environments, making it suitable for industrial applications.

Organization: 512KX16

Provides a substantial data organization scheme for efficient data storage and access.

Minimum Operating Temperature: -40 °C

Ensures reliable functionality in extreme cold conditions, ideal for outdoor and industrial use.

No. of Sectors/Size: 1,2,1,15

Flexible sector sizes enhance memory management and allocation efficiency.

Terminal Finish: TIN/NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Facilitates easier placement on PCBs, simplifying assembly and minimizing space usage.

Maximum Seated Height: 2.8 mm

Low profile helps maintain a compact design in end products.

Width: 13.3 mm

Compact dimension allows for efficient use of space on circuit boards.

Minimum Supply Voltage (Vsup): 4.5 V

Offers a lower voltage threshold for power-sensitive applications.

Type: NOR TYPE

Provides fast read speed and random access capabilities, ideal for code storage.

Common Flash Interface: YES

Ensures compatibility with various controllers, streamlining integration into systems.

Length: 28.2 mm

Compact length fits easily within space-restricted designs.

Programming Voltage (V): 5

Standard voltage simplifies the design process for compatible programming devices.

Temperature Grade: INDUSTRIAL

Designed for rigorous industrial conditions, ensuring reliability and longevity.

Technology: CMOS

Offers low power consumption and high density, making it efficient for portable devices.

Parallel or Serial: PARALLEL

Improves data transfer speeds and allows simultaneous data access, enhancing performance.

Terminal Form: GULL WING

Enables better soldering and component placement on PCBs for improved reliability.

Sector Size (Words): 16K,8K,32K,64K

Varied sector sizes accommodate diverse application requirements and flexibility.

Maximum Supply Current: 20 mA

Reasonable current consumption supports efficient power management in designs.

No. of Words: 524288 words

Substantial memory capacity allows for extensive data storage capabilities.

Toggle Bit: YES

Facilitates easy detection of memory status, enhancing usability in embedded systems.

Memory Width: 16

Sufficient width permits efficient data processing and compatibility with various systems.

Terminal Pitch: 1.27 mm

Standard pitch ensures compatibility with a wide range of PCB layouts.

No. of Words Code: 512K

High word code allows for extensive data handling and application versatility.

Command User Interface: YES

User-friendly interface aids in easier command execution for efficient programming.

Ready or Busy: YES

This feature provides clear status feedback during operations, enhancing control and reliability.

Maximum Supply Voltage (Vsup): 5.5 V

Offers a safe margin for voltage variations ensuring stable operation.

Boot Block: TOP

Top boot block structure allows for quicker boot time and program execution.

Memory Density: 8388608 bit

High memory density enhances storage efficiency, suitable for complex applications.

Memory IC Type: FLASH

Flash technology provides rewritable memory, making it versatile for various applications.

Maximum Standby Current: 0.00015 Amp

Very low standby current reduces power consumption in idle applications.

Maximum Access Time: 70 ns

Quick access time improves system responsiveness and efficiency.

Data Polling: YES

Allows real-time data integrity checks, increasing reliability in critical applications.

Technical Specifications

Flash Memory M29F800DT70M6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3/e4

Length:

28.2 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

2.8 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

NOR TYPE

Width:

13.3 mm

Trade Compliance

M29F800DT70M6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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