Loading...

M29W200BT55N1

STMicroelectronics

M29W200BT55N1 by STMicroelectronics

M29W200BT55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for space-constrained applications. This device operates asynchronously, ensuring efficient data handling in embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,319

-

-

-

-

Vyrian

USA . 2,810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,810

-

-

-

-

Zilex Electronics Inc.

Canada . 1,632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,632

-

-

-

-

Anansix

USA . 620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

620

-

-

-

-

Connector Distribution Corp

USA . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23

-

-

-

-

Right Parts Inc.

USA . 23 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,998 parts In-Stock

1+ parts

$4.430

100+ parts

-

1k+ parts

$3.987

10k+ parts

-

1,998

$4.430

-

$3.987

-

MKK Technologies

India . 173 parts In-Stock

1+ parts

$8.330

100+ parts

-

1k+ parts

-

10k+ parts

-

173

$8.330

-

-

-

DigiPath Technology Company

USA . 173 parts In-Stock

1+ parts

$8.330

100+ parts

-

1k+ parts

-

10k+ parts

-

173

$8.330

-

-

-

AZTECH Wire

Italy . 1,192 parts In-Stock

1+ parts

$10.220

100+ parts

-

1k+ parts

-

10k+ parts

-

1,192

$10.220

-

-

-

Microchip USA

USA . 381 parts In-Stock

1+ parts

$13.799

100+ parts

-

1k+ parts

-

10k+ parts

-

381

$13.799

-

-

-

A-Z Elektronik GmbH

Germany . 4,694 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,694

-

-

-

-

Alle Elektronik GmbH

Germany . 3,129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,129

-

-

-

-

Corphita

USA . 1,436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,436

-

-

-

-

Parana Technologies

USA . 1,399 parts In-Stock

1+ parts

-

100+ parts

$5.296

1k+ parts

-

10k+ parts

-

1,399

-

$5.296

-

-

Overview

Unlock unparalleled performance and efficiency with the M29W200BT55N1 Flash Memory from STMicroelectronics. Renowned for their commitment to innovation and quality, STMicroelectronics delivers this compact and robust solution perfect for a wide range of applications—from consumer electronics to automotive systems. Enjoy enhanced data management, lower power consumption, and increased reliability, empowering your projects to reach new heights while ensuring seamless integration and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stress, making the flash memory reliable for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of space on circuit boards, facilitating easy integration into modern electronics.

Package Shape: RECTANGULAR

Rectangular shape optimizes layout for high-density PCB designs, offering flexibility in component placement.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster access speeds and simplifies design requirements, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

The standard 3.3V operation is widely supported in modern electronics, ensuring compatibility with most devices and reducing power consumption.

Power Supplies (V): 3.3

Single voltage power supply simplifies design and ensures efficient operation, aligning with energy-saving standards.

No. of Terminals: 48

The 48-terminal configuration provides ample connectivity for data and control signals, enhancing performance in more complex applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile allows for space-saving designs, making this memory suitable for portable and compact electronics.

Alternate Memory Width: 8

An alternate memory width of 8 bits caters to various use cases, enabling versatility in applications ranging from consumer electronics to industrial systems.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures stable operation in a variety of environmental conditions, making it ideal for commercial applications.

Organization: 128KX16

The memory organization allows efficient data storage and retrieval, suitable for applications requiring quick access to large amounts of data.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliability even in cooler environments, expanding its range of potential applications.

No. of Sectors/Size: 1,2,1,3

The sector configuration enhances data management capabilities, optimizing read and write processes for improved system performance.

Terminal Finish: TIN LEAD

The tin-lead finish provides excellent solderability and corrosion resistance, ensuring reliable connections and longevity in electronic devices.

Terminal Position: DUAL

Dual terminal position offers improved layout flexibility on circuit boards, facilitating versatile application designs.

Maximum Seated Height: 1.2 mm

The low seated height allows for ultra-thin device designs, essential for modern portable electronics.

Width: 12 mm

Compact width contributes to space-saving designs while maintaining high data density, aligning with industry trends toward miniaturization.

Minimum Supply Voltage (Vsup): 3 V

Operating down to 3V enhances compatibility with low-power devices, supporting energy-efficient applications.

Type: NOR TYPE

NOR type memory provides random access capabilities, making it suitable for code storage in embedded systems.

Length: 20 mm

The compact length enables integration into space-constrained designs without sacrificing performance.

Programming Voltage (V): 3

The 3V programming voltage allows for lower power operation, extending battery life in portable devices.

Temperature Grade: COMMERCIAL

Commercial temperature grading assures reliability for general consumer applications without extreme conditions.

Technology: CMOS

CMOS technology offers lower power consumption and higher speed, making it an efficient choice for modern electronic devices.

Parallel or Serial: PARALLEL

Parallel data access enables faster data transfer rates, ideal for high-performance applications.

Terminal Form: GULL WING

Gull wing terminals enhance soldering and connection reliability, ensuring robust assembly in electronic devices.

Sector Size (Words): 16K,8K,32K,64K

Flexible sector sizes allow for optimized data storage and management, improving efficiency in applications.

Maximum Supply Current: 20 mA

Low maximum supply current supports energy-efficient designs, making this memory suitable for battery-powered devices.

No. of Words: 131072 words

A capacity of 131072 words allows for substantial data storage, meeting the demands of modern applications.

Toggle Bit: YES

The presence of a toggle bit facilitates easier data verification and integrity checks, enhancing data reliability.

Memory Width: 16

A memory width of 16 bits supports high data throughput, suitable for applications that require significant data processing.

Terminal Pitch: 0.5 mm

The 0.5 mm pitch allows for high-density placement on PCBs, maximizing usage space and maintaining performance.

No. of Words Code: 128K

A word code of 128K enhances the efficiency of memory addressing and management, optimizing performance in various applications.

Command User Interface: YES

A command user interface simplifies operations and makes integration into systems easier for developers.

Ready or Busy: YES

The ready or busy indicator supports efficient operation coordination in multi-tasking environments, improving system reliability.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V ensures high performance while remaining within safe operational limits for numerous devices.

Endurance: 100000 Write/Erase Cycles

An endurance of 100,000 cycles ensures long-lasting performance, making it a solid choice for applications requiring frequent updates.

Boot Block: TOP

Top boot block organization allows for faster firmware updates and reliable startup processes, essential for embedded systems.

Memory Density: 2097152 bit

High memory density provides ample storage capacity for complex applications, catering to a wide range of consumer and industrial needs.

Memory IC Type: FLASH

Flash memory type is favored for non-volatile data storage, ensuring data retention even without power, crucial for many applications.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current ensures battery conservation in systems where power efficiency is critical.

Maximum Access Time: 55 ns

Fast maximum access time translates to quick data reads, enhancing overall system responsiveness and performance.

Data Polling: YES

Data polling capability provides developers with a reliable method to check memory status, facilitating smoother operation in integrated systems.

Technical Specifications

Flash Memory M29W200BT55N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29W200BT55N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20