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M50FLW080BK5G

STMicroelectronics

M50FLW080BK5G by STMicroelectronics

M50FLW080BK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.3V, features a quad terminal position, and supports applications in embedded systems. With a temp range of -20 °C to 85 °C, it's ideal for reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,691 parts In-Stock

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2,691

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Digiode

USA . 2,605 parts In-Stock

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2,605

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Anansix

USA . 1,711 parts In-Stock

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1,711

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,054 parts In-Stock

1+ parts

$3.308

100+ parts

-

1k+ parts

$2.977

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1,054

$3.308

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$2.977

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MKK Technologies

India . 1,570 parts In-Stock

1+ parts

$6.221

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1,570

$6.221

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DigiPath Technology Company

USA . 1,570 parts In-Stock

1+ parts

$6.221

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1,570

$6.221

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AZTECH Wire

Italy . 1,166 parts In-Stock

1+ parts

$8.860

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1,166

$8.860

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Component Stockers USA

USA . 748 parts In-Stock

1+ parts

$99.990

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748

$99.990

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Microchip USA

USA . 5,486 parts In-Stock

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5,486

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Parana Technologies

USA . 1,583 parts In-Stock

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$3.956

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1,583

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$3.956

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Corphita

USA . 986 parts In-Stock

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986

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Overview

Unlock a world of innovation with the M50FLW080BK5G from STMicroelectronics, a leader in cutting-edge semiconductor technology. This high-performance flash memory solution combines reliability and efficiency, perfect for demanding applications like IoT devices, automotive systems, and consumer electronics. With its low power consumption and robust temperature range, you gain enhanced performance and longevity, ensuring your projects thrive. Elevate your designs with STMicroelectronics' trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robustness, making the product suitable for various environmental conditions.

Surface Mount: YES

Being surface mount facilitates compact designs, allowing for high-density PCB layouts.

Package Shape: RECTANGULAR

The rectangular shape is optimal for efficient space utilization on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, improving overall system performance.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal supply voltage of 3.3V is standard in many applications, enhancing compatibility with other components.

Power Supplies: 3.3 V

Consistent power supply specifications ensure stable operation across various use cases.

No. of Terminals: 32

Having 32 terminals supports a wide range of functionalities and connections, making integration easier.

Package Style (Meter): CHIP CARRIER

The chip carrier style enables efficient heat dissipation and enhances reliability.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows this product to be used in demanding environments without risk of failure.

Organization: 1MX8

The memory organization of 1MX8 provides an efficient structure for data storage, optimizing access patterns.

Minimum Operating Temperature: -20 °C

A wide temperature range ensures reliable operation in various climatic conditions.

No. of Sectors/Size: 48,13

Having multiple sectors allows for better data management and organization, making it easier to handle large datasets.

Terminal Finish: TIN

Tin terminal finish offers good solderability and enhances the durability of connections.

Terminal Position: QUAD

Quad terminal positioning allows for greater connectivity options, which can improve performance in multi-chip configurations.

Maximum Seated Height: 3.56 mm

A compact seated height aids in saving space on the PCB while still maintaining accessibility.

Width: 11.43 mm

A moderate width allows flexibility in design without compromising the overall layout.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3V adds versatility, enabling operation with various supply configurations.

Type: NOR TYPE

NOR type memory is known for its fast read speeds and lower power consumption, making it ideal for high-performance applications.

Length: 13.97 mm

This length is conducive for compact designs, contributing to effective use of available board space.

Programming Voltage (V): 3 V

A programming voltage of 3V suits many contemporary digital systems, enhancing compatibility.

Technology: CMOS

CMOS technology offers low power consumption and high density, resulting in efficient memory performance.

Parallel or Serial: PARALLEL

Parallel operation provides high-speed data transfer, optimizing performance in applications requiring fast access.

Terminal Form: J BEND

The J bend terminal form improves mounting stability and reliability.

Sector Size (Words): 4K, 64K

Variable sector sizes provide flexibility in storage allocation, optimizing memory usage based on application needs.

Maximum Supply Current: 60 mA

This maximum supply current indicates low power consumption, making it energy efficient.

No. of Words: 1048576 words

A capacity of over 1 million words allows for substantial data storage, suitable for demanding applications.

Memory Width: 8

An 8-bit memory width allows for efficient data handling in applications that require moderate data throughput.

Terminal Pitch: 1.27 mm

The 1.27 mm pitch aids in simple and reliable soldering to PCB tracks, ensuring stable connections.

No. of Words Code: 1M

A word code of 1M signifies significant data capacity, meeting the needs of various digital applications.

Command User Interface: YES

A command user interface enables easier integration into systems with specific command requirements.

Maximum Supply Voltage (Vsup): 3.6 V

Allowing up to 3.6V gives design engineers some flexibility in power supply choices.

Memory Density: 8388608 bit

A high memory density translates to greater storage capabilities, accommodating complex applications.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage, retaining data even without power.

Maximum Standby Current: 0.0001 Amp

The very low standby current helps in extending battery life in portable devices.

Maximum Access Time: 11 ns

An access time of 11 ns indicates fast response rates, crucial for high-speed applications.

Technical Specifications

Flash Memory M50FLW080BK5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,13

No. of Terminals:

32

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M50FLW080BK5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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