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PSD813F1VA-15M

STMicroelectronics

PSD813F1VA-15M by STMicroelectronics

PSD813F1VA-15M from STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode and a max access time of 15 ns. It operates at a nominal voltage of 3.3V, suitable for low-profile applications. Ideal for embedded systems, it features a compact flatpack design with 52 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,849 parts In-Stock

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Digiode

USA . 4,374 parts In-Stock

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4,374

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Anansix

USA . 2,620 parts In-Stock

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Prism Electronics

USA . 20 parts In-Stock

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IDEA Electronic Components Group

UK . 770 parts In-Stock

1+ parts

$3.285

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$2.957

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770

$3.285

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$2.957

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MKK Technologies

India . 794 parts In-Stock

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$6.178

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794

$6.178

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DigiPath Technology Company

USA . 794 parts In-Stock

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$6.178

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794

$6.178

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Microchip USA

USA . 316 parts In-Stock

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$7.006

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316

$7.006

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AZTECH Wire

Italy . 714 parts In-Stock

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$11.120

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714

$11.120

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Corphita

USA . 1,190 parts In-Stock

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Parana Technologies

USA . 51 parts In-Stock

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$3.928

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51

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$3.928

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Perfect Parts

USA . 22 parts In-Stock

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A-Plus Industry Inc.

USA . 2 parts In-Stock

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Overview

Unlock a new level of performance with the PSD813F1VA-15M from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality flash memory combines reliability and efficiency, perfect for applications ranging from consumer electronics to industrial systems. With its low-profile design and synchronous operation, it ensures fast data access and reduced power consumption, delivering exceptional value and seamless integration into your projects. Elevate your designs with ST's trusted technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures protection against environmental factors, enhancing reliability and durability.

Surface Mount: YES

Surface mount technology allows for compact designs and is ideal for high-density applications, facilitating easier integration into circuits.

Package Shape: SQUARE

The square shape optimizes space utilization on PCBs and supports better thermal management.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures faster data transfers, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at a nominal voltage of 3.3 V aligns with standard voltage levels in most digital systems, ensuring compatibility.

No. of Terminals: 52

A higher terminal count can facilitate more connections and better performance in complex circuit designs.

Package Style (Meter): FLATPACK, LOW PROFILE

The low-profile flatpack design is ideal for space-constrained applications, providing versatility in mounting options.

Maximum Operating Temperature: 70 °C

Operating effectively at up to 70 °C makes it suitable for a variety of commercial applications without the risk of overheating.

Organization: 128KX8

This organization provides a solid memory structure, enabling efficient data storage and retrieval.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C ensures reliable functionality in a wide range of environments.

Terminal Position: QUAD

The quad terminal position facilitates efficient connectivity and reduces the footprint on the PCB.

Maximum Seated Height: 1.54 mm

Low seated height minimizes the overall profile of the component, making it ideal for compact designs.

Width: 14 mm

A standard width ensures compatibility with existing applications and mounting designs.

Minimum Supply Voltage (Vsup): 3 V

Supports a minimum voltage of 3 V, allowing for flexible power supply options dependent on applications.

Type: NOR TYPE

NOR-type flash memory is known for its fast read speeds, making it an excellent choice for applications needing quick data access.

Length: 14 mm

Standard length of 14 mm allows for easy integration into existing PCB layouts.

Programming Voltage (V): 3.3

A standard programming voltage of 3.3 V makes it compatible with many microcontrollers and digital devices.

Temperature Grade: COMMERCIAL

Designed for commercial grade performance, this product is reliable for general use in consumer electronics.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, contributing to a longer battery life in portable devices.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data throughput and improves performance in environments with high data demands.

Terminal Form: GULL WING

Gull wing terminations provide robust mechanical support and are easier to solder during assembly.

No. of Words: 131072 words

Ample word count (131072 words) provides significant data storage capacity for a variety of applications.

Memory Width: 8

An 8-bit memory width suits a range of applications, providing an optimal balance between size and performance.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for a compact design while ensuring ease of soldering and manufacturing.

No. of Words Code: 128K

The coding of 128K words signifies good data storage capability, which is essential for various applications.

Maximum Supply Voltage (Vsup): 3.6 V

Allows operation up to 3.6 V, providing flexibility in power supply choices for different applications.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms ensures quick write operations, making this product efficient for data logging applications.

Memory Density: 1048576 bit

With a memory density of 1048576 bits, the product offers sufficient storage for a wide range of applications.

Memory IC Type: FLASH

Flash memory type allows for non-volatile data storage, perfect for applications needing data retention without a continuous power supply.

Maximum Access Time: 15 ns

A maximum access time of 15 ns enables fast data retrieval, beneficial for high-speed processing applications.

Technical Specifications

Flash Memory PSD813F1VA-15M attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

15 ns

JESD-30 Code:

S-PQFP-G52

Length:

14 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

52

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.54 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

14 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

PSD813F1VA-15M Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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