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PSD813F1AV-90UIT

STMicroelectronics

PSD813F1AV-90UIT by STMicroelectronics

PSD813F1AV-90UIT from STMicroelectronics is a low-profile, synchronous NOR flash memory with a 3.3V supply and 64 terminals. It operates in temperatures from -40 °C to 85 °C, featuring a max access time of 90 ns. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,736 parts In-Stock

1+ parts

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4,736

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Digiode

USA . 4,211 parts In-Stock

1+ parts

-

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-

1k+ parts

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4,211

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Anansix

USA . 340 parts In-Stock

1+ parts

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340

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,023 parts In-Stock

1+ parts

$5.060

100+ parts

-

1k+ parts

$4.554

10k+ parts

-

1,023

$5.060

-

$4.554

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MKK Technologies

India . 2,244 parts In-Stock

1+ parts

$9.515

100+ parts

-

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10k+ parts

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2,244

$9.515

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DigiPath Technology Company

USA . 2,244 parts In-Stock

1+ parts

$9.515

100+ parts

-

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2,244

$9.515

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Parana Technologies

USA . 720 parts In-Stock

1+ parts

-

100+ parts

$6.050

1k+ parts

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720

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$6.050

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Corphita

USA . 654 parts In-Stock

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654

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Overview

Unlock superior performance and reliability with the PSD813F1AV-90UIT from STMicroelectronics, a leader in innovative semiconductor solutions. This advanced flash memory combines low power consumption with robust temperature resilience, making it ideal for industrial applications, automotive systems, and consumer electronics. Experience the benefits of faster data access and impressive longevity, ensuring your projects run smoothly and efficiently while staying ahead in today’s competitive tech landscape.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and reliability, making this flash memory suitable for various industrial applications.

Surface Mount: YES

Being surface mount compatible allows for easier integration into compact designs, saving board space and enabling higher density layouts.

Package Shape: SQUARE

The square package shape is optimum for uniform thermal management and provides flexible layout options.

Operating Mode: SYNCHRONOUS

Synchronous operation enables higher data transfer rates, enhancing performance in demanding applications.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at a 3.3 V nominal supply voltage is ideal for compatibility with modern digital systems and reduces power consumption.

No. of Terminals: 64

With 64 terminals, this memory chip provides ample connections and supports parallel communication for faster data access.

Package Style (Meter): FLATPACK, LOW PROFILE

The low-profile flatpack package style is suitable for space-constrained designs, allowing for more compact device assembly.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes this memory suitable for standard industrial environments.

Organization: 128KX8

The organization of 128KX8 allows efficient handling of 8-bit data, making it ideal for applications requiring fast reads and writes.

Minimum Operating Temperature: -40 °C

With an extended minimum operating temperature of -40 °C, this memory is perfect for harsh environments and outdoor applications.

Terminal Position: QUAD

Quad terminal positioning facilitates effective power distribution and signal integrity, enhancing performance.

Maximum Seated Height: 1.54 mm

The low maximum seated height allows for integration into ultra-thin devices, contributing to sleeker product designs.

Width: 14 mm

A width of 14 mm aligns with standard board designs, ensuring compatibility and ease of integration.

Minimum Supply Voltage (Vsup): 3 V

With a minimum supply voltage of 3 V, this memory ensures wide compatibility with various power systems.

Type: NOR TYPE

NOR type memory is known for its fast read speeds, providing quick data access which is crucial for performance-critical applications.

Length: 14 mm

The 14 mm length contributes to a well-proportioned design, suited for efficient soldering and mounting processes.

Programming Voltage: 3.3 V

A programming voltage of 3.3 V simplifies the design for programming circuitry, reducing component count and design complexity.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliability in applications subject to extreme temperatures, making it ideal for rigorous environments.

Technology: CMOS

CMOS technology provides low power consumption and high speed, enhancing the efficiency and performance of the memory chip.

Parallel or Serial: PARALLEL

Parallel communication allows for high data throughput, making this memory suitable for applications requiring rapid data access.

Terminal Form: GULL WING

Gull wing terminals improve soldering characteristics and mounting consistency, ensuring reliable connections on the PCB.

No. of Words: 131072 words

A capacity of 131072 words provides ample memory space for most embedded applications, supporting complex data storage needs.

Memory Width: 8

An 8-bit memory width allows efficient storage and retrieval of data, optimizing the performance of various applications.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm strikes a balance between spacing for soldering and compact design, facilitating efficient PCB layouts.

No. of Words Code: 128K

With a 128K word code, this flash memory is capable of handling substantial amounts of data, making it versatile for various functions.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6 V ensures robust operation under varying power conditions, enhancing reliability.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms is beneficial for applications requiring moderate write operations, offering a good trade-off between speed and endurance.

Memory Density: 1048576 bit

With a density of 1048576 bits, this memory provides a substantial storage capacity, allowing for complex applications and larger data sets.

Memory IC Type: FLASH

As a FLASH memory IC type, this product has the advantages of non-volatility, making it perfect for data retention after power loss.

Maximum Access Time: 90 ns

A maximum access time of 90 ns ensures quick data access, crucial for performance-intensive applications.

Technical Specifications

Flash Memory PSD813F1AV-90UIT attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

S-PQFP-G64

Length:

14 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

64

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.54 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

14 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

PSD813F1AV-90UIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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