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PSD813F1AV-12MT

STMicroelectronics

PSD813F1AV-12MT by STMicroelectronics

PSD813F1AV-12MT from STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V and features a max access time of 12 ns. This compact flatpack design ensures efficient performance in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,113 parts In-Stock

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4,113

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Digiode

USA . 2,761 parts In-Stock

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2,761

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Anansix

USA . 164 parts In-Stock

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164

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,258 parts In-Stock

1+ parts

$5.008

100+ parts

-

1k+ parts

$4.507

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2,258

$5.008

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$4.507

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MKK Technologies

India . 710 parts In-Stock

1+ parts

$9.416

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710

$9.416

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DigiPath Technology Company

USA . 710 parts In-Stock

1+ parts

$9.416

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710

$9.416

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Corphita

USA . 4,422 parts In-Stock

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4,422

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Parana Technologies

USA . 614 parts In-Stock

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$5.987

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614

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$5.987

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Overview

Unlock unparalleled performance with the PSD813F1AV-12MT from STMicroelectronics, a leader in innovative semiconductor solutions. This reliable NOR Flash Memory offers exceptional speed and efficiency, ideal for a range of applications including automotive systems, consumer electronics, and IoT devices. Trust in STMicroelectronics' commitment to quality, ensuring robust operation in demanding environments. Elevate your designs with superior memory that delivers reliability and scalability for future growth!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, making this flash memory ideal for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient PCB usage, making it suitable for modern electronic devices.

Package Shape: SQUARE

The square shape optimizes space on the PCB, facilitating easier integration into tight layouts.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances speed and efficiency, ensuring faster data access and processing.

Nominal Supply Voltage / Vsup (V): 3.3

A nominal voltage of 3.3V is compatible with a wide range of low-power applications, making this memory versatile.

No. of Terminals: 52

The 52 terminals provide a good balance of connectivity and complexity, ensuring reliable integration into multiple systems.

Package Style (Meter): FLATPACK

Flatpack design minimizes height and maximizes circuit board space, ideal for designs where vertical height is limited.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this memory is reliable for commercial applications in warmer environments.

Organization: 128KX8

The 128Kx8 organization offers a structured layout that is conducive for efficient data retrieval and organization.

Minimum Operating Temperature: 0 °C

What this memory can withstand from 0 °C provides flexibility for use in various environmental conditions.

Terminal Position: QUAD

The quad terminal positioning allows for better thermal performance and easier heat dissipation.

Maximum Seated Height: 2.35 mm

A low seated height of 2.35 mm enables slim device designs while maintaining performance.

Width: 10 mm

A width of 10 mm is suitable for compact footprints in small electronic devices.

Minimum Supply Voltage (Vsup): 3 V

A minimum supply voltage of 3V enables operation in low-power applications.

Type: NOR TYPE

NOR type flash memory allows for effective random access, making it faster for reading operations.

Length: 10 mm

With a length of 10 mm, this product is designed to fit well within limited space on PCBs.

Programming Voltage (V): 3.3

The programming voltage of 3.3V aligns with modern digital systems, ensuring compatibility across various devices.

Temperature Grade: COMMERCIAL

Commercial-grade temperature tolerance ensures reliability in standard operational settings.

Technology: CMOS

CMOS technology facilitates lower power consumption and higher density, enhancing performance.

Parallel or Serial: PARALLEL

Parallel access allows for higher data throughput, making it suitable for high-speed applications.

Terminal Form: GULL WING

The gull wing terminal form supports reliable soldering and connection on PCBs, enhancing robustness.

No. of Words: 131072 words

With 131,072 words of storage, this memory offers sufficient space for moderate data storage needs.

Memory Width: 8

An 8-bit memory width is ideal for handling typical data sizes in common applications.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm aids in precision soldering and component placement on dense PCBs.

No. of Words Code: 128K

With a 128K word coding, this memory supports efficient data handling suitable for many consumer electronics.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V offers flexibility in power supply selection for various applications.

Maximum Write Cycle Time (tWC): 10 ms

A write cycle time of 10 ms ensures reasonable write speeds for applications needing quick updates.

Memory Density: 1048576 bit

A density of 1,048,576 bits provides ample storage for a variety of applications, striking a balance between space and capacity.

Memory IC Type: FLASH

Being a flash memory IC, it offers the advantage of non-volatile storage, maintaining data without power.

Maximum Access Time: 12 ns

With a maximum access time of 12 ns, this memory provides quick access to data, enhancing overall system performance.

Technical Specifications

Flash Memory PSD813F1AV-12MT attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

12 ns

JESD-30 Code:

S-PQFP-G52

Length:

10 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

52

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.35 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

10 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

PSD813F1AV-12MT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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