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PSD813F1AV-70UT

STMicroelectronics

PSD813F1AV-70UT by STMicroelectronics

PSD813F1AV-70UT by STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode and a max access time of 70 ns. It features a low-profile flatpack design, ideal for compact applications. Operating b/w 3V and 3.6V, it suits commercial temperature ranges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,649 parts In-Stock

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4,649

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Vyrian

USA . 3,699 parts In-Stock

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3,699

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Anansix

USA . 2,088 parts In-Stock

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2,088

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 461 parts In-Stock

1+ parts

$4.204

100+ parts

-

1k+ parts

$3.784

10k+ parts

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461

$4.204

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$3.784

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MKK Technologies

India . 2,329 parts In-Stock

1+ parts

$7.906

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2,329

$7.906

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DigiPath Technology Company

USA . 2,329 parts In-Stock

1+ parts

$7.906

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2,329

$7.906

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Corphita

USA . 2,606 parts In-Stock

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2,606

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Parana Technologies

USA . 2,022 parts In-Stock

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$5.027

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2,022

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$5.027

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Overview

Unlock the potential of your designs with the PSD813F1AV-70UT from STMicroelectronics, a leader in innovative technology. This high-quality flash memory solution ensures reliable performance in demanding applications, delivering speed and efficiency you can trust. With its compact design and robust temperature range, it’s perfect for consumer electronics, automotive systems, and more. Elevate your projects with ST's commitment to excellence—a choice that enhances value and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, making it reliable for a variety of applications.

Surface Mount: YES

Being surface mount compatible allows for easier integration into compact designs and improves the efficiency of circuit board layouts.

Package Shape: SQUARE

The square package shape provides uniformity in mounting, contributing to stable performance in high-density designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for quicker data access, improving overall performance and reducing latency in data processing.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal supply voltage of 3.3 V ensures compatibility with a wide range of modern digital devices, making it versatile for various applications.

No. of Terminals: 64

Having 64 terminals provides ample connections for parallel data processing, enhancing throughput and overall data handling efficiency.

Package Style (Meter): FLATPACK, LOW PROFILE

The flatpack low-profile design reduces stack height, allowing for space-efficient placement in compact electronic assemblies.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this product can perform reliably in a range of environmental conditions, enhancing its usability in various applications.

Organization: 128KX8

The 128Kx8 organization balances memory capacity with ease of access for efficient data retrieval and storage.

Minimum Operating Temperature: 0 °C

Operating down to 0 °C ensures functionality in cooler environmental conditions, making it suitable for a wider array of applications.

Terminal Position: QUAD

The quad terminal position enhances performance capabilities by allowing parallel connection advantages, leading to faster data transfers.

Maximum Seated Height: 1.54 mm

A maximum seated height of 1.54 mm contributes to design flexibility and space efficiency within electronic systems.

Width: 14 mm

The 14 mm width maintains standardization in design and compatibility with numerous circuit boards, enhancing ease of integration.

Minimum Supply Voltage: 3 V

The minimum supply voltage of 3 V provides flexibility in power supply options, accommodating devices with varying voltage requirements.

Type: NOR TYPE

As a NOR type memory, this product allows for faster reads and reliable random access capabilities, ideal for firmware storage.

Length: 14 mm

The length of 14 mm helps maintain compact designs while ensuring alignment with standard electronic components.

Programming Voltage: 3.3 V

A programming voltage of 3.3 V ensures safe and efficient programming procedures without risking damage to the memory.

Temperature Grade: COMMERCIAL

Being graded for commercial temperatures indicates reliable performance in typical conditions, catering to consumer electronics and general applications.

Technology: CMOS

CMOS technology offers low power consumption while maintaining high performance, making this product suitable for portable devices.

Parallel or Serial: PARALLEL

Parallel interface architecture allows simultaneous access to multiple bits, enhancing data transfer speeds and improving system performance.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and mounting on PCB, ensuring a stable connection and reducing assembly complexity.

No. of Words: 131072 words

With 131072 words, this memory offers substantial storage capacity for applications requiring significant data retention.

Memory Width: 8

An 8-bit memory width allows for effective data handling and efficient operation in various applications, from GPIO control to memory storage.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm is a standard dimension that enhances compatibility with a variety of PCB designs and layouts.

No. of Words Code: 128K

A word code of 128K indicates sufficient capacity for firmware applications, ensuring adequate storage for essential system code.

Maximum Supply Voltage: 3.6 V

A maximum supply voltage of 3.6 V provides headroom for voltage fluctuations, ensuring consistent and reliable operation in various conditions.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms allows for relatively quick writing speeds, accommodating applications that require frequent updates.

Memory Density: 1048576 bit

With a density of 1,048,576 bits, this memory is well-suited for storage-intensive tasks and applications, further enhancing its value in the market.

Memory IC Type: FLASH

Being a FLASH memory IC offers high endurance and reusability, providing an excellent balance of speed and data retention across repeated cycles.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, this product contributes to quicker data retrieval, crucial for improving the speed of overall system performance.

Technical Specifications

Flash Memory PSD813F1AV-70UT attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

S-PQFP-G64

Length:

14 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

64

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.54 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

14 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

PSD813F1AV-70UT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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