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M29W040B90N1

STMicroelectronics

M29W040B90N1 by STMicroelectronics

M29W040B90N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100K write/erase cycles, making it ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 11,100 parts In-Stock

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Vyrian

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R&J Components

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Digiode

USA . 937 parts In-Stock

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Anansix

USA . 854 parts In-Stock

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Prism Electronics

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IDEA Electronic Components Group

UK . 246 parts In-Stock

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$4.499

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$4.049

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MKK Technologies

India . 1,152 parts In-Stock

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$8.460

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DigiPath Technology Company

USA . 1,152 parts In-Stock

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$8.460

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AZTECH Wire

Italy . 296 parts In-Stock

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$19.920

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A-Z Elektronik GmbH

Germany . 6,975 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,650 parts In-Stock

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Corphita

USA . 4,610 parts In-Stock

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Assy Fe

Spain . 1,051 parts In-Stock

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Microchip USA

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Perfect Parts

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Kepictronics

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Parana Technologies

USA . 56 parts In-Stock

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$5.379

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Overview

Elevate your designs with the M29W040B90N1 Flash Memory from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-performance memory chip delivers exceptional reliability and efficiency, ideal for automotive, industrial, and consumer applications. With a compact footprint and robust endurance of 100,000 write/erase cycles, it offers seamless integration into your projects, ensuring faster data access while reducing power consumption. Experience unparalleled quality and performance that empowers your next breakthrough!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and longevity of the flash memory product.

Surface Mount: YES

Surface mount technology allows for compact design and simplifies the assembly process, making it suitable for modern applications.

Package Shape: RECTANGULAR

The rectangular shape efficiently utilizes board space, making this product ideal for space-constrained designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times and simpler interface control, enhancing performance.

Nominal Supply Voltage / Vsup: 3.3 V

3.3 V operation aligns with standard voltage levels for many devices, making it versatile for integration.

Power Supplies (V): 3/3.3

Compatibility with both 3V and 3.3V power supplies increases flexibility for various applications.

No. of Terminals: 32

A sufficient number of terminals for complex functions while still maintaining a compact size.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile are advantageous for low-profile applications, allowing for more compact designs.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C makes this product suitable for commercial environments.

Organization: 512KX8

This organization offers a balance between capacity and ease of use, allowing for efficient memory management.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this product can be used in a variety of standard environmental conditions.

No. of Sectors/Size: 8

Having multiple sectors enhances data organization and management, improving memory utilization.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability, which is critical for reliable electrical connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB design and allows for easier integration into various systems.

Maximum Seated Height: 1.2 mm

A low seated height contributes to a compact design, making it suitable for applications with limited space.

Width: 8 mm

A width of 8 mm helps maintain a slim profile, perfect for small electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

The ability to operate at a minimum of 2.7 V enhances compatibility with a broader range of devices.

Type: NOR TYPE

NOR type provides fast random access times, making it suitable for applications requiring quick data retrieval.

Length: 18.4 mm

A length of 18.4 mm maintains a compact structure without sacrificing performance.

Programming Voltage (V): 2.7

A programming voltage of 2.7 V ensures compatibility with various logic levels and devices.

Temperature Grade: COMMERCIAL

Commercial temperature grading indicates reliability in typical operating conditions, ensuring consistent performance.

Technology: CMOS

CMOS technology enables low power consumption, making it ideal for battery-powered applications.

Parallel or Serial: PARALLEL

Parallel data access allows for faster data transfer rates, enhancing performance for high-speed applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and provide better mechanical stability on PCBs.

Sector Size (Words): 64K

64K sector size allows for efficient data management and flexibility in using memory resources.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures low power consumption during operation, contributing to energy efficiency.

No. of Words: 524288 words

With 524288 words, this flash memory offers a substantial amount of storage space for various applications.

Toggle Bit: YES

The presence of a toggle bit simplifies the programming and erasing of the memory, enhancing usability.

Memory Width: 8

An 8-bit memory width provides adequate data handling for many common applications.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for high-density component placement, making it suitable for modern circuit designs.

No. of Words Code: 512K

512K word code indicates a strong capability for data storage, making it useful for applications requiring substantial memory.

Command User Interface: YES

A command user interface simplifies the integration and control of the memory within various systems.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V ensures safe operation under various conditions while maintaining performance.

Endurance: 100000 Write/Erase Cycles

With an endurance of 100,000 cycles, this memory is well-suited for applications that require repeated programmability.

Memory Density: 4194304 bit

A high memory density of 4194304 bits allows for efficient storage, making this product versatile for many applications.

Memory IC Type: FLASH

As a flash memory type, it provides non-volatile storage, retaining data without power.

Maximum Standby Current: 0.0001 Amp

A very low maximum standby current minimizes power consumption in idle states, ideal for battery-operated devices.

Maximum Access Time: 90 ns

A maximum access time of 90 ns ensures fast read operations, enhancing performance for time-sensitive applications.

Data Polling: YES

Data polling enables efficient monitoring of memory status, simplifying the programming process and enhancing usability.

Technical Specifications

Flash Memory M29W040B90N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29W040B90N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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