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M29F010B70K6T

STMicroelectronics

M29F010B70K6T by STMicroelectronics

M29F010B70K6T from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,432 parts In-Stock

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7,432

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Digiode

USA . 2,730 parts In-Stock

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2,730

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QIE Inc.

USA . 1,400 parts In-Stock

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1,400

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Anansix

USA . 758 parts In-Stock

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758

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Bristol Electronics

USA . 197 parts In-Stock

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197

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Cyclops Electronics Ltd

UK . 36 parts In-Stock

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36

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,661 parts In-Stock

1+ parts

$5.199

100+ parts

-

1k+ parts

$4.679

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1,661

$5.199

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$4.679

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MKK Technologies

India . 2,201 parts In-Stock

1+ parts

$9.776

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2,201

$9.776

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DigiPath Technology Company

USA . 2,201 parts In-Stock

1+ parts

$9.776

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2,201

$9.776

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AZTECH Wire

Italy . 745 parts In-Stock

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$16.860

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745

$16.860

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QUARKTWIN TECHNOLOGY LTD

USA . 20,777 parts In-Stock

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20,777

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A-Z Elektronik GmbH

Germany . 5,159 parts In-Stock

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5,159

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Microchip USA

USA . 4,512 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,439 parts In-Stock

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3,439

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Corphita

USA . 1,565 parts In-Stock

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1,565

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Parana Technologies

USA . 471 parts In-Stock

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$6.216

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471

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$6.216

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Overview

Unlock the potential of your next project with the M29F010B70K6T Flash Memory from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers this reliable NOR-type memory solution, perfect for a range of applications from industrial automation to consumer electronics. Enjoy superior performance with fast access times, excellent endurance, and robust temperature operation—ideal for demanding environments. Choose M29F010B70K6T for quality, reliability, and lasting value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to physical stress, making the product suitable for various applications.

Surface Mount: YES

Being a surface mount device allows for easier integration into modern circuitry, saving board space and improving performance.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout on PCBs, optimizing space and enhancing the aesthetic of electronic designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster access times and greater flexibility in data handling, which improves overall system performance.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is standard for many applications, ensuring compatibility with a wide range of devices.

Power Supplies (V): 5

Single supply of 5V simplifies design requirements and reduces power management complexity.

No. of Terminals: 32

Having 32 terminals allows for robust connections, facilitating easier interfacing with various host systems.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging enhances thermal management, which contributes to reliability during high-performance operations.

Maximum Operating Temperature: 85 °C

The maximum operating temperature of 85 °C makes this product suitable for industrial applications where high thermal tolerance is crucial.

Organization: 128KX8

With an organization of 128Kx8, this memory provides a good balance between density and accessibility for various applications.

Minimum Operating Temperature: -40 °C

This wide temperature range (-40 °C to 85 °C) ensures reliable operation in extreme environments, ideal for industrial use.

No. of Sectors/Size: 8

Having multiple sectors allows for organized data management, which enhances data access efficiency and performance.

Terminal Finish: TIN LEAD

Tin-lead terminals provide excellent solderability and conductivity, facilitating reliable connections in PCB assembly.

Terminal Position: QUAD

The quad terminal position optimizes space and improves electrical performance by reducing inductance.

Maximum Seated Height: 3.56 mm

A lower seated height enhances mounting options and optimizes design flexibility in compact spaces.

Width: 11.43 mm

The compact width allows for modern electronic designs that require high-density components.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V ensures stable performance and reliable operation in various environments.

Type: NOR TYPE

NOR type memory is known for its fast random access speed, making it ideal for applications requiring quick data retrieval.

Length: 13.97 mm

This length contributes to the device's compact design, allowing for integration in space-constrained applications.

Programming Voltage (V): 5

The programming voltage of 5V simplifies interfacing with most IC circuits, promoting ease of design.

Temperature Grade: INDUSTRIAL

Industrial-grade components are built to withstand harsher conditions, ensuring longevity and reliability in demanding applications.

Technology: CMOS

CMOS technology is energy efficient, providing low power consumption while maintaining high performance.

Parallel or Serial: PARALLEL

Parallel data access speeds up data transfer rates, improving overall system performance significantly.

Terminal Form: J BEND

J bend terminals offer better mechanical stability during soldering, ensuring reliable connections.

Sector Size (Words): 16K

A sector size of 16K allows for efficient data organization and greater control over memory management.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA enables low power consumption, aligning with energy-efficient electronic designs.

No. of Words: 131072 words

With a capability of storing 131072 words, this memory is suitable for a wide variety of applications requiring substantial data storage.

Toggle Bit: YES

The inclusion of a toggle bit facilitates improved data integrity checking, which is important for reliable data storage.

Memory Width: 8

An 8-bit memory width strikes a balance between data throughput and complexity, making it versatile for different applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm aids in compact PCB layouts, allowing for more densely packed designs.

No. of Words Code: 128K

The memory's ability to store 128K words enhances its utility in various applications requiring substantial storage.

Command User Interface: YES

A command user interface simplifies control commands, enhancing user-friendliness and efficiency in operations.

Maximum Supply Voltage (Vsup): 5.5 V

The range of voltage tolerance (up to 5.5V) allows compatibility with a wider array of devices and circuits.

Endurance: 100000 Write/Erase Cycles

With an endurance of 100,000 write/erase cycles, this product is highly reliable for applications demanding frequent rewriting.

Memory Density: 1048576 bit

A memory density of 1 megabit provides ample storage space for various applications, enhancing capability.

Memory IC Type: FLASH

As a flash memory IC, it offers non-volatile storage, retaining data without the need for continuous power.

Maximum Standby Current: 0.0001 Amp

The low maximum standby current enhances energy efficiency, making it ideal for battery-powered devices.

Maximum Access Time: 70 ns

A maximum access time of 70 ns indicates fast data retrieval, beneficial for high-speed applications.

Data Polling: YES

Data polling capability provides confirmation of data status, enhancing overall data integrity and reliability.

Technical Specifications

Flash Memory M29F010B70K6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29F010B70K6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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