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M29W200BB70N1

STMicroelectronics

M29W200BB70N1 by STMicroelectronics

M29W200BB70N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and data polling capabilities, it ensures reliable performance in commercial environments.

Median Price

$8.960

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 10 parts In-Stock

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Vyrian

USA . 3,286 parts In-Stock

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Digiode

USA . 1,643 parts In-Stock

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Anansix

USA . 715 parts In-Stock

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ComSIT Distribution GmbH

Germany . 31 parts In-Stock

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ComSIT USA

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A2Z Electronics, Inc.

USA . 20 parts In-Stock

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Microfarads

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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IDEA Electronic Components Group

UK . 1,829 parts In-Stock

1+ parts

$5.275

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$4.748

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$6.248

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$6.186

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$5.936

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AZTECH Wire

Italy . 441 parts In-Stock

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$8.680

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MKK Technologies

India . 2,213 parts In-Stock

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DigiPath Technology Company

USA . 2,213 parts In-Stock

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Component Stockers USA

USA . 515 parts In-Stock

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Kepictronics

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Parana Technologies

USA . 2,250 parts In-Stock

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Microchip USA

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Corphita

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Perfect Parts

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Overview

Unlock unparalleled performance with the M29W200BB70N1 Flash Memory from STMicroelectronics, a leader renowned for quality and innovation. Its compact design ensures easy integration into various applications like automotive systems, industrial controls, and consumer electronics. Experience fast asynchronous operation, robust endurance, and low power consumption, delivering exceptional reliability and efficiency to elevate your projects. Trust in STMicroelectronics for memory solutions that drive success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact design and easier manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape is standard for efficient use of board space in various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies design and increases data throughput in real-time applications.

Nominal Supply Voltage / Vsup: 3.3 V

A nominal voltage of 3.3 V is ideal for many digital circuits, ensuring compatibility across devices.

Power Supplies (V): 3/3.3

Supports multiple supply voltages, providing flexibility in system design.

No. of Terminals: 48

A higher number of terminals facilitates more connections and functionality in compact devices.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This style allows for a compact footprint, ideal for space-constrained applications.

Alternate Memory Width: 8

Offers options for different data pathways, catering to various design requirements.

Maximum Operating Temperature: 70 °C

Supports operation in demanding environments, enhancing reliability.

Organization: 128KX16

This organization allows for efficient data structuring, optimizing memory access.

Minimum Operating Temperature: 0 °C

The ability to operate from 0 °C ensures functionality in a range of climates.

No. of Sectors/Size: 1,2,1,3

Flexible sector sizes enhance performance and adaptability for diverse applications.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and durability in various conditions.

Terminal Position: DUAL

Dual terminal positioning enhances mechanical stability and connectivity.

Maximum Seated Height: 1.2 mm

Low height enables stacking and efficient PCB space utilization.

Width: 12 mm

A compact width is beneficial for high-density circuit designs.

Minimum Supply Voltage (Vsup): 2.7 V

Supports a lower voltage range, aligning with energy-efficient designs.

Type: NOR TYPE

NOR flash memory is known for fast read times, making it suitable for high-speed applications.

Length: 20 mm

This length is a standard size that fits well with various hardware configurations.

Programming Voltage (V): 2.7

Operation can occur at lower programming voltages, ensuring compatibility with modern devices.

Temperature Grade: COMMERCIAL

Commercial grade classification reflects suitability for general-purpose applications.

Technology: CMOS

CMOS technology provides low power consumption and high performance, suitable for battery-powered devices.

Parallel or Serial: PARALLEL

Parallel configuration allows for faster data transfer rates compared to serial configurations.

Terminal Form: GULL WING

Gull wing leads are optimal for surface mounting, ensuring secure connections.

Sector Size (Words): 16K, 8K, 32K, 64K

Variable sector sizes enhance the flexibility of memory management and performance.

Maximum Supply Current: 20 mA

A relatively low maximum supply current contributes to energy-efficient operation.

No. of Words: 131072 words

Provides ample memory space for a variety of applications, making it versatile.

Toggle Bit: YES

This feature supports the identification of the current state of device memory, enhancing performance.

Memory Width: 16

A wider memory width enables faster data processing capabilities.

Terminal Pitch: 0.5 mm

Narrow terminal pitch allows higher density components on printed circuit boards.

No. of Words Code: 128K

A clear specification of word capacity facilitates informed choices for customers.

Command User Interface: YES

Provides users with an accessible method for memory management, enhancing usability.

Ready or Busy: YES

This functionality allows for state monitoring, improving data management performance.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum voltage support allows for compatibility in various power-sensitive applications.

Endurance: 100000 Write/Erase Cycles

High endurance ensures long-term reliability and durability in write-intensive applications.

Boot Block: BOTTOM

Boot block configuration supports efficient firmware storage and recovery processes.

Memory Density: 2097152 bit

This density ensures sufficient storage for applications requiring substantial memory.

Memory IC Type: FLASH

Flash memory type is suitable for a broad range of applications, including storage and boot processes.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current enhances the overall energy efficiency of the device.

Maximum Access Time: 70 ns

Fast access time leads to improved performance, making it suitable for high-speed applications.

Data Polling: YES

Enables users to confirm the memory operation state, enhancing functionality and usability.

Technical Specifications

Flash Memory M29W200BB70N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

48

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29W200BB70N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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