Loading...

M29F800DB70N1

STMicroelectronics

M29F800DB70N1 by STMicroelectronics

M29F800DB70N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and a max access time of 70ns. It features an asynchronous operation mode, dual terminal position, and is ideal for embedded applications requiring reliable data storage. Its compact SOIC package ensures efficient space utilization in electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,446

-

-

-

-

J2 Sourcing AB

Sweden . 1,254 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,254

-

-

-

-

Pegasus Components GmbH

Germany . 770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

770

-

-

-

-

Digiode

USA . 356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

356

-

-

-

-

Anansix

USA . 114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

114

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 66 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66

-

-

-

-

Connector Distribution Corp

USA . 43 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43

-

-

-

-

Right Parts Inc.

USA . 43 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43

-

-

-

-

Q Components

USA . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,494 parts In-Stock

1+ parts

$5.173

100+ parts

-

1k+ parts

$4.656

10k+ parts

-

1,494

$5.173

-

$4.656

-

MKK Technologies

India . 1,545 parts In-Stock

1+ parts

$9.728

100+ parts

-

1k+ parts

-

10k+ parts

-

1,545

$9.728

-

-

-

DigiPath Technology Company

USA . 1,545 parts In-Stock

1+ parts

$9.728

100+ parts

-

1k+ parts

-

10k+ parts

-

1,545

$9.728

-

-

-

AZTECH Wire

Italy . 403 parts In-Stock

1+ parts

$13.770

100+ parts

-

1k+ parts

-

10k+ parts

-

403

$13.770

-

-

-

Component Stockers USA

USA . 326 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

326

$99.990

-

-

-

Parana Technologies

USA . 1,845 parts In-Stock

1+ parts

-

100+ parts

$6.185

1k+ parts

-

10k+ parts

-

1,845

-

$6.185

-

-

Corphita

USA . 1,246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,246

-

-

-

-

Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Microchip USA

USA . 464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

464

-

-

-

-

Perfect Parts

USA . 157 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

157

-

-

-

-

Overview

Unlock unparalleled performance with the M29F800DB70N1 from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality flash memory offers remarkable reliability and efficiency, perfect for applications ranging from consumer electronics to automotive systems. Enjoy faster data access and seamless integration, all while benefiting from ST’s commitment to excellence and customer satisfaction. Elevate your designs with this versatile memory solution that promises both durability and unmatched value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact designs, making it suitable for modern electronic applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on circuit boards, perfect for space-constrained devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access and improved performance in read operations.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is common and compatible with many existing electronic systems.

Power Supplies (V): 5

This single voltage requirement simplifies power supply design and integration in various applications.

No. of Terminals: 48

Having 48 terminals allows for ample connectivity options and efficient signal distribution.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The thin profile is advantageous for applications where space is limited, such as in portable devices.

Alternate Memory Width: 8

An alternate memory width of 8 bits enables flexibility in data handling and improves compatibility.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this product is suitable for a variety of operating environments.

Organization: 512KX16

This organization provides a balance between capacity and performance, making it efficient for data storage.

Minimum Operating Temperature: 0 °C

Suitable for a wide range of applications due to its operational capability from 0 °C upwards.

No. of Sectors/Size: 1,2,1,15

The sectoring scheme allows for efficient data management and flexibility in memory usage across applications.

Terminal Finish: TIN LEAD

The tin-lead finish ensures reliability in soldering and provides excellent electrical conductivity.

Terminal Position: DUAL

Dual terminal positioning enhances installation options and adaptability during assembly.

Maximum Seated Height: 1.2 mm

A low seated height ensures compatibility with low-profile designs and improves overall assembly efficiency.

Width: 12 mm

The compact width facilitates efficient layout on PCB, crucial for dense electronic assemblies.

Minimum Supply Voltage (Vsup): 4.5 V

The lower bound on supply voltage ensures functionality in varied supply scenarios, enhancing adaptability.

Type: NOR TYPE

As a NOR type flash memory, it offers fast random access capabilities, which is ideal for code execution directly from flash.

Common Flash Interface: YES

The presence of a common flash interface simplifies integration and communication with microcontroller units.

Length: 18.4 mm

Compact length contributes to efficient space management on circuit boards for various applications.

Programming Voltage (V): 5

A programming voltage of 5V aligns with standard practices, ensuring ease of integration and programming.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliability for general consumer electronics applications.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operation, making it ideal for modern applications.

Parallel or Serial: PARALLEL

Parallel configuration allows for higher data throughput, enhancing performance in data-intensive applications.

Terminal Form: GULL WING

Gull-wing terminals facilitate easy soldering and placement on printed circuit boards.

Sector Size (Words): 16K,8K,32K,64K

Various sector sizes provide flexibility for different applications, optimizing memory usage.

Maximum Supply Current: 20 mA

A modest maximum supply current indicates efficient power use, suitable for battery-powered devices.

No. of Words: 524288 words

With 524288 words, it offers substantial storage capacity for firmware and data applications.

Toggle Bit: YES

Toggle bit capability supports advanced programming and troubleshooting features.

Memory Width: 16

A memory width of 16 bits maximizes data bandwidth, making it efficient for applications requiring larger data transfers.

Terminal Pitch: 0.5 mm

The fine terminal pitch allows for high-density arrangements, which is key for compact design layouts.

No. of Words Code: 512K

512K words of code allows for substantial storage capabilities in embedded applications.

Command User Interface: YES

Having a user-friendly command interface simplifies the interaction with the memory, enhancing usability.

Ready or Busy: YES

The readiness signal helps in managing memory operations efficiently, ensuring smooth interactions with the host device.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safe operating margin, ensuring device longevity and reliability.

Boot Block: BOTTOM

Having the boot block at the bottom allows for faster access during system initialization, an important feature for bootable applications.

Memory Density: 8388608 bit

With a memory density of 8388608 bits, it maximizes storage efficiency, suitable for a variety of data-intensive applications.

Memory IC Type: FLASH

Flash memory type is perfect for non-volatile storage, ensuring data retention without power.

Maximum Standby Current: 0.00015 Amp

A very low standby current indicates efficiency and reduced power consumption during idle states.

Maximum Access Time: 70 ns

A maximum access time of 70 ns enhances speed for read operations, essential in high-performance applications.

Data Polling: YES

The inclusion of data polling allows for efficient monitoring of memory state without unnecessary delays.

Technical Specifications

Flash Memory M29F800DB70N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DB70N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20