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M29F080D70N6

STMicroelectronics

M29F080D70N6 by STMicroelectronics

M29F080D70N6 from STMicroelectronics is a NOR flash memory with 1M x 8 organization, operating at 5V. It features a max access time of 70 ns and operates in temperatures from -40 °C to 85°C, making it ideal for industrial applications. Its compact SOIC package ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 23,760 parts In-Stock

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Digiode

USA . 4,606 parts In-Stock

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Vyrian

USA . 4,508 parts In-Stock

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Anansix

USA . 1,090 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 127 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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IDEA Electronic Components Group

UK . 219 parts In-Stock

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$5.043

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$4.538

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219

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$4.538

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MKK Technologies

India . 1,656 parts In-Stock

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$9.482

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DigiPath Technology Company

USA . 1,656 parts In-Stock

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$9.482

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AZTECH Wire

Italy . 586 parts In-Stock

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$21.770

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Component Stockers USA

USA . 605 parts In-Stock

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$99.990

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Perfect Parts

USA . 6,814 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,117 parts In-Stock

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Corphita

USA . 2,676 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Glotronic Ltd.

UK . 2,392 parts In-Stock

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Parana Technologies

USA . 994 parts In-Stock

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Microchip USA

USA . 262 parts In-Stock

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GreenTree Electronics

Israel . 94 parts In-Stock

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Kepictronics

USA . 93 parts In-Stock

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Overview

Unlock unparalleled performance and reliability with the M29F080D70N6 flash memory from STMicroelectronics. This high-quality NOR flash memory is designed for a wide range of applications, ensuring your devices run smoothly even in demanding environments. With ST’s renowned commitment to innovation and quality, you gain enhanced durability and efficiency, transforming your projects into successful ventures. Elevate your technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures long-lasting reliability in various environments.

Surface Mount: YES

Surface mount technology allows for easier integration into compact electronic designs.

Package Shape: RECTANGULAR

The rectangular shape is efficient for circuit board layouts, optimizing space utilization.

Operating Mode: ASYNCHRONOUS

Asynchronous operation permits faster data access and processing, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage of 5V is widely supported, ensuring compatibility with various systems.

Power Supplies (V): 5

This power supply requirement makes it easy to incorporate into existing designs without modifications.

No. of Terminals: 40

With 40 terminals, this component provides ample connectivity options for diverse applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile allow for space-efficient designs, ideal for portable devices.

Maximum Operating Temperature: 85 °C

A high operating temperature rating makes the product suitable for industrial applications.

Organization: 1MX8

This organization enables efficient data storage and retrieval, optimizing memory usage.

Minimum Operating Temperature: -40 °C

The extensive temperature range ensures reliability in extreme environments.

No. of Sectors/Size: 16

Having multiple sectors facilitates better memory management and organization.

Terminal Finish: TIN LEAD

Tin-lead finish ensures good solderability and robust connections during assembly.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB design and layout.

Maximum Seated Height: 1.2 mm

A low seated height is advantageous for compact assemblies in thin devices.

Width: 10 mm

The 10 mm width is suitable for standard PCB footprints, ensuring easy integration.

Minimum Supply Voltage (Vsup): 4.5 V

This flexibility in minimum supply voltage helps maintain functionality in power-sensitive applications.

Type: NOR TYPE

NOR Flash is favorable for high-speed random access applications.

Common Flash Interface: YES

Compatibility with standard flash interfaces simplifies integration into existing systems.

Length: 18.4 mm

The 18.4 mm length helps fit compact design requirements without sacrificing performance.

Programming Voltage (V): 5

A standard programming voltage promotes consistency and reliability in programming operations.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperature conditions ensures reliability in harsh environments.

Technology: CMOS

CMOS technology results in low power consumption, making it energy-efficient.

Parallel or Serial: PARALLEL

Parallel access allows faster data transfer rates, improving overall system performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and assembly, enhancing manufacturing efficiency.

Sector Size (Words): 64K

With a significant sector size, this product can handle large blocks of data effectively.

Maximum Supply Current: 20 mA

The low maximum supply current supports energy-efficient designs, conserving power.

No. of Words: 1048576 words

With over a million words available, it offers substantial storage capacity for various applications.

Toggle Bit: YES

The toggle bit feature enhances data integrity verification during read operations.

Memory Width: 8

An 8-bit memory width is suitable for a variety of data processing applications.

Terminal Pitch: 0.5 mm

The 0.5 mm pitch allows for higher-density designs, ideal for modern electronic devices.

No. of Words Code: 1M

The 1M words code indicates a robust capacity, useful for complex data storage needs.

Command User Interface: YES

A user-friendly command interface facilitates easier integration and programming.

Ready or Busy: YES

The ready/busy indicator supports efficient resource management during memory operations.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage provides flexibility in design margins while ensuring stable operation.

Memory Density: 8388608 bit

A high memory density is crucial for applications requiring large data sets.

Memory IC Type: FLASH

Being a flash memory IC means it can be easily erased and reprogrammed, enhancing versatility.

Maximum Standby Current: 0.00015 Amp

The extremely low standby current helps extend battery life in portable applications.

Maximum Access Time: 70 ns

A fast access time of 70 ns improves responsiveness in data-intensive applications.

Data Polling: YES

Data polling capability allows quick checks on the status of read/write operations for efficient control.

Technical Specifications

Flash Memory M29F080D70N6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

16

No. of Terminals:

40

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29F080D70N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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