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M29F040B70K1

STMicroelectronics

M29F040B70K1 by STMicroelectronics

M29F040B70K1 from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for asynchronous applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. This compact chip carrier is perfect for embedded systems requiring reliable data storage.

Median Price

$11.540

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

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Freelance Electronics

USA . 264 parts In-Stock

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$4.029

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Component Electronics Inc.

Canada . 235 parts In-Stock

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Voyager Components

USA . 10 parts In-Stock

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Chip Stock

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Digiode

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Electronics Depot

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ACDS - Activité Composants Distribution Service

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MRC Electronics

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LWI Electronics Inc

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J & M Industries LLC

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ECAB

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Bristol Electronics

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Greenchips

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SIE Connect GmbH - GreenChips

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Halfin

Belgium . 128 parts In-Stock

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R&J Components

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NAC Semi

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Legend Electronics Inc.

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Atlantic Semiconductor

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Freddi Giovanni

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Sogenti Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ComSIT Distribution GmbH

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LIBRA Elektronik GmbH

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Quantum Digital Technology

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Sinequanon

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Mentor Electronics Marketing, LLC

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Corel Iberica Componentes, S.L.

Spain . 26 parts In-Stock

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Martec Srl

Italy . 23 parts In-Stock

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GES GmbH

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EMSNET

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Elcom Components

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,431 parts In-Stock

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$3.853

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$3.468

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MKK Technologies

India . 457 parts In-Stock

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DigiPath Technology Company

USA . 457 parts In-Stock

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AZTECH Wire

Italy . 80 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,660 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,773 parts In-Stock

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Kepictronics

USA . 4,452 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 3,142 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 1,547 parts In-Stock

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Microchip USA

USA . 497 parts In-Stock

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Parana Technologies

USA . 450 parts In-Stock

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Eliminating Global Boundries, Inc

USA . 50 parts In-Stock

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Overview

Unlock your project’s potential with the M29F040B70K1 Flash Memory from STMicroelectronics, where quality meets reliability. Renowned for their innovative solutions, STMicroelectronics delivers a high-performance memory chip perfect for various applications such as embedded systems, consumer electronics, and automotive designs. With impressive endurance and fast access times, this memory solution ensures optimal performance while providing exceptional value to enhance your product's capabilities. Elevate your designs with ST's trusted technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material offers reliable protection against environmental factors, ensuring long-lasting performance.

Surface Mount: YES

The surface mount design allows for compact circuit board layouts, ensuring efficient use of space.

Package Shape: RECTANGULAR

The rectangular shape provides a uniform footprint, making integration into various devices straightforward.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances data access speeds, making it suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage simplifies system design and compatibility with existing components.

Power Supplies (V): 5

Consistent power supply requirements ensure ease of integration into most electronic systems.

No. of Terminals: 32

The 32 terminals facilitate a wide range of connectivity options for versatility in design.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging provides improved thermal performance and reliable electrical connections.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C makes this memory suitable for standard commercial applications.

Organization: 512KX8

The 512Kx8 organization enables flexible data structuring, ideal for various memory-intensive applications.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this product can function in a wide range of environmental conditions.

No. of Sectors/Size: 8

Eight sectors allow for organized data management and efficient memory utilization.

Terminal Finish: TIN LEAD

Tin lead finish ensures effective solderability, enhancing assembly quality and reliability.

Terminal Position: QUAD

Quad terminal positioning allows for better space management and ease of routing on PCBs.

Maximum Seated Height: 3.56 mm

The low seated height minimizes overall device profile, enabling compact designs.

Width: 11.43 mm

A width of 11.43 mm makes it a versatile component suitable for various PCB layouts.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V allows compatibility with lower-voltage applications.

Type: NOR TYPE

NOR type flash memory provides faster read access times, suitable for code storage and execution.

Length: 13.97 mm

A compact length contributes to space efficiency while maintaining high performance.

Programming Voltage (V): 5

The programming voltage aligns with standard practices, enhancing convenience in design.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliability in typical operating conditions.

Technology: CMOS

CMOS technology provides low power consumption and high speed, making it ideal for modern applications.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates, improving overall system performance.

Terminal Form: J BEND

J bend terminal form offers reliable mechanical support for secure and stable connections.

Sector Size (Words): 64K

64K sector size balances storage efficiency and performance, optimizing usage for various applications.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures the device can deliver adequate performance without significant power draw.

No. of Words: 524288 words

Offers substantial word capacity, providing ample storage for applications requiring high data density.

Toggle Bit: YES

Toggle bit functionality enhances reliability and efficiency in read operations.

Memory Width: 8

An 8-bit memory width aligns with many modern data architectures, ensuring compatibility.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is standard, facilitating easy integration into various circuit designs.

No. of Words Code: 512K

512K words of code capacity is ideal for a range of applications requiring substantial memory.

Command User Interface: YES

An intuitive command user interface simplifies control, enabling faster development and integration.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to operate at up to 5.5V provides flexibility in power supply options.

Endurance: 100000 Write/Erase Cycles

With an endurance of 100,000 write/erase cycles, it ensures longevity and reliability for frequent use.

Memory Density: 4194304 bit

High memory density of 4194304 bits is ideal for storing large amounts of data efficiently.

Memory IC Type: FLASH

Flash memory type offers non-volatile storage, retaining data even when power is lost.

Maximum Standby Current: 0.0001 Amp

The low maximum standby current contributes to energy efficiency, making it a good choice for battery-powered applications.

Maximum Access Time: 70 ns

A maximum access time of 70 ns enables swift data retrieval, enhancing system responsiveness.

Data Polling: YES

Data polling feature allows for efficient monitoring of data operations, improving overall performance.

Technical Specifications

Flash Memory M29F040B70K1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29F040B70K1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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