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M29F800DT70N1

STMicroelectronics

M29F800DT70N1 by STMicroelectronics

M29F800DT70N1 from STMicroelectronics is a 5V NOR flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates asynchronously, and supports data polling. Ideal for embedded applications requiring reliable storage.

Median Price

$8.518

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,500 parts In-Stock

1+ parts

$8.518

100+ parts

$3.691

1k+ parts

$3.492

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-

1,500

$8.518

$3.691

$3.492

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Chip Stock

USA . 24,900 parts In-Stock

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Vyrian

USA . 4,867 parts In-Stock

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4,867

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Digiode

USA . 2,586 parts In-Stock

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2,586

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Anansix

USA . 1,812 parts In-Stock

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1,812

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Lakeland Logistics Inc

USA . 1,500 parts In-Stock

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1,500

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R&J Components

USA . 94 parts In-Stock

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94

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Lonics

Poland . 8 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 80 parts In-Stock

1+ parts

$4.733

100+ parts

-

1k+ parts

$4.260

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80

$4.733

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$4.260

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MKK Technologies

India . 560 parts In-Stock

1+ parts

$8.901

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560

$8.901

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DigiPath Technology Company

USA . 560 parts In-Stock

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$8.901

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560

$8.901

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AZTECH Wire

Italy . 710 parts In-Stock

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$9.580

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710

$9.580

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Component Stockers USA

USA . 316 parts In-Stock

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$99.990

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316

$99.990

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A-Z Elektronik GmbH

Germany . 11,824 parts In-Stock

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Alle Elektronik GmbH

Germany . 7,882 parts In-Stock

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Corphita

USA . 3,747 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Parana Technologies

USA . 2,371 parts In-Stock

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$5.660

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2,371

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$5.660

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Kepictronics

USA . 1,152 parts In-Stock

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Microchip USA

USA . 366 parts In-Stock

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366

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Overview

Unlock the power of innovation with the M29F800DT70N1 Flash Memory from STMicroelectronics! Renowned for its exceptional quality and reliability, this versatile memory chip is perfect for a range of applications—from consumer electronics to automotive systems. With its robust design, minimal power consumption, and rapid access speeds, it delivers unmatched performance while ensuring data integrity. Choose STMicroelectronics for cutting-edge technology that propels your projects forward with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures protection against environmental factors, increasing the longevity of the flash memory.

Surface Mount: YES

Surface mount technology allows for compact PCB designs, making this product suitable for space-constrained applications.

Package Shape: RECTANGULAR

The rectangular package shape is versatile and widely compatible with various PCB layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances speed performance for read and write operations, making it ideal for high-performance applications.

Nominal Supply Voltage / Vsup: 5V

The standard 5V supply voltage is broadly supported by existing systems, facilitating easier integration.

Power Supplies (V): 5

Single 5V power supply simplifies circuit design and reduces power consumption.

No. of Terminals: 48

With 48 terminals, this memory chip offers ample input/output capabilities for complex applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile contribute to minimal space usage on the board while maintaining high performance.

Alternate Memory Width: 8

The alternative memory width provides flexibility in data handling and interfacing with various system architectures.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this flash memory is suitable for a wide range of industrial applications.

Organization: 512KX16

The organization format allows for efficient data storage and retrieval, catering to applications requiring organized data management.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0 °C ensures functionality in cooler environments.

No. of Sectors/Size: 1,2,1,15

Having multiple sector sizes allows for flexible memory management suited for various data storage requirements.

Terminal Finish: TIN LEAD

The tin-lead terminal finish ensures reliable soldering and durability of connections.

Terminal Position: DUAL

Dual terminal position enhances stability and alignment during installation.

Maximum Seated Height: 1.2 mm

A low maximum seated height allows for integration into ultra-slim electronic devices.

Width: 12 mm

A compact width of 12 mm optimizes space usage in designed circuits.

Minimum Supply Voltage (Vsup): 4.5V

A lower minimum supply voltage ensures compatibility with a range of power supply systems.

Type: NOR TYPE

NOR type memory offers faster read access times, making it suitable for applications requiring quick data retrieval.

Common Flash Interface: YES

The support for common flash interfaces enhances interoperability with numerous devices and systems.

Parallel or Serial: PARALLEL

Parallel data transfer increases the speed of data access and retrieval, beneficial for high-throughput applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and ease of soldering.

Sector Size (Words): 16K, 8K, 32K, 64K

Flexible sector sizes enhance memory usage efficiency and versatility for various applications.

Maximum Supply Current: 20 mA

A low maximum supply current ensures lower power consumption, beneficial for battery-operated devices.

No. of Words: 524288 words

A large number of words allows for substantial data storage capacity, meeting the needs of complex applications.

Toggle Bit: YES

The inclusion of a toggle bit feature enhances the control over memory operations, improving overall performance.

Memory Width: 16

A memory width of 16 bits supports high-volume data processing capabilities.

Terminal Pitch: 0.5 mm

A fine terminal pitch of 0.5 mm accommodates compact board layouts and tighter spacing requirements.

No. of Words Code: 512K

A coding capability with 512K words supports extensive data storage and application flexibility.

Command User Interface: YES

The command user interface facilitates easy control over memory operations and prompts.

Ready or Busy: YES

The ready/busy feature allows for efficient data processing management by indicating the memory status.

Maximum Supply Voltage (Vsup): 5.5V

The higher maximum voltage tolerance increases operational reliability under varying power conditions.

Boot Block: TOP

The top boot block configuration supports quick boot times, enhancing overall system efficiency.

Memory Density: 8388608 bit

With a high memory density of 8388608 bits, this device allows for extensive applications in data storage.

Memory IC Type: FLASH

Flash memory technology is optimal for non-volatile storage solutions, retaining data without power.

Maximum Standby Current: 0.00015 Amp

Extremely low standby current translates to energy efficiency, making it suitable for low-power applications.

Maximum Access Time: 70 ns

A competitive maximum access time of 70 ns enhances the speed of data retrieval and overall system performance.

Data Polling: YES

Data polling capability allows for efficient monitoring of memory status, improving interaction with memory operations.

Technical Specifications

Flash Memory M29F800DT70N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DT70N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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