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M50FLW080ANB5G

STMicroelectronics

M50FLW080ANB5G by STMicroelectronics

M50FLW080ANB5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode, ideal for embedded applications. It operates at 3.3V, features a max access time of 11 ns, and supports temperatures from -20 °C to 85 °C. Its compact SOIC package ensures efficient space utilization in designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 17,900 parts In-Stock

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Vyrian

USA . 2,097 parts In-Stock

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Digiode

USA . 1,759 parts In-Stock

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Prism Electronics

USA . 1,233 parts In-Stock

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Anansix

USA . 927 parts In-Stock

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Bristol Electronics

USA . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 330 parts In-Stock

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$3.746

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$3.372

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330

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$3.372

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MKK Technologies

India . 1,929 parts In-Stock

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$7.045

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$7.045

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DigiPath Technology Company

USA . 1,929 parts In-Stock

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$7.045

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AZTECH Wire

Italy . 357 parts In-Stock

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$18.000

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A-Z Elektronik GmbH

Germany . 5,279 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

Germany . 3,519 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Assy Fe

Spain . 1,512 parts In-Stock

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Corphita

USA . 1,460 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 1,242 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

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Overview

Elevate your designs with the M50FLW080ANB5G from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance flash memory offers unparalleled reliability and efficiency for a wide range of applications, from consumer electronics to industrial automation. Its compact design ensures seamless integration, while low power consumption enhances device longevity. Trust in ST's commitment to quality, delivering value that drives success in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing durable plastic/epoxy materials enhances the longevity and reliability of the flash memory product.

Surface Mount: YES

Surface mount technology allows for compact designs, making it suitable for modern electronic devices.

Package Shape: RECTANGULAR

Rectangular packaging optimizes space usage on PCBs, promoting efficient layout designs.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer speeds, making it ideal for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V makes it compatible with a wide range of digital logic levels.

Power Supplies (V): 3.3

Standard power supply requirements simplify integration into existing electronic systems.

No. of Terminals: 32

A 32-terminal configuration allows for multiple connections, enabling more complex functionalities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design facilitates easy integration into space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, it can function reliably in various environmental conditions.

Organization: 1MX8

The 1MX8 organization allows for efficient memory access, improving performance in data-intensive applications.

Minimum Operating Temperature: -20 °C

A wide operating temperature range makes it suitable for use in outdoor and industrial applications.

No. of Sectors/Size: 48, 13

Multiple sectors enhance data organization and management capabilities, enabling efficient data storage.

Terminal Finish: TIN/TIN BISMUTH

High-quality terminal finish improves solderability and reduces oxidation risk, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in design and allows for better routing on PCBs.

Maximum Seated Height: 1.2 mm

A low seated height contributes to a slim profile, which is essential for ultra-thin devices and space-saving designs.

Width: 8 mm

This suitable width strikes a balance between size and performance, allowing for compact integration.

Minimum Supply Voltage (Vsup): 3 V

Operating with a minimum voltage of 3V ensures compatibility with various low-power applications.

Type: NOR TYPE

NOR type memory offers fast read speeds and random access, making it ideal for applications requiring quick retrieval of data.

Length: 12.4 mm

Compact length supports space-efficient designs without compromising on memory capacity.

Programming Voltage (V): 3

Programming at 3V allows for lower power operation, contributing to energy efficiency.

Technology: CMOS

CMOS technology results in lower power consumption, making it energy-efficient and suitable for battery-powered devices.

Parallel or Serial: PARALLEL

Parallel configuration facilitates high-speed data transfers, ideal for applications requiring rapid data throughput.

Terminal Form: GULL WING

The gull wing terminal form is widely recognized for ease of soldering and good mechanical stability.

Sector Size (Words): 4K, 64K

Configurable sector size options provide flexibility for various application needs and data storage strategies.

Maximum Supply Current: 60 mA

A maximum current draw of 60 mA ensures efficient power usage while maintaining performance.

No. of Words: 1048576 words

With over a million words of storage, it provides significant capacity for applications requiring large amounts of data.

Memory Width: 8

An 8-bit memory width aligns with standard data bus configurations, simplifying integration into various systems.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for dense packaging, fitting more connections in a smaller area.

No. of Words Code: 1M

The 1M word count indicates a substantial storage capability, suitable for various storage-intensive applications.

Command User Interface: YES

A command user interface simplifies operation and control, facilitating easier integration with controllers.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum voltage of 3.6V provides a range for higher performance in demanding applications.

Memory Density: 8388608 bit

Featuring a high memory density supports larger datasets, perfect for applications in data storage and processing.

Memory IC Type: FLASH

As a flash memory type, it offers non-volatile storage capabilities, ensuring data retention without power.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current enhances energy efficiency, crucial for battery-operated devices.

Maximum Access Time: 11 ns

A rapid access time of 11 ns promotes high-speed performance, making it suitable for time-sensitive applications.

Technical Specifications

Flash Memory M50FLW080ANB5G attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

11 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3/e6

Length:

12.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

48,13

No. of Terminals:

32

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

4K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M50FLW080ANB5G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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