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M29F016D70N6

STMicroelectronics

M29F016D70N6 by STMicroelectronics

M29F016D70N6 from STMicroelectronics is a 2M x 8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features a max access time of 70 ns and operates in asynchronous mode. With a temp range of -40 °C to 85°C, it's perfect for harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 20,400 parts In-Stock

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Vyrian

USA . 6,419 parts In-Stock

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Anansix

USA . 1,332 parts In-Stock

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Digiode

USA . 564 parts In-Stock

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564

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Bristol Electronics

USA . 325 parts In-Stock

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325

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4 Star Electronics, Inc.

USA . 230 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,363 parts In-Stock

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$2.351

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$2.116

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2,363

$2.351

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$2.116

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MKK Technologies

India . 1,925 parts In-Stock

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$4.420

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$4.420

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DigiPath Technology Company

USA . 1,925 parts In-Stock

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$4.420

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$4.420

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AZTECH Wire

Italy . 161 parts In-Stock

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$17.300

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Component Stockers USA

USA . 278 parts In-Stock

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$18.190

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$18.190

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A-Z Elektronik GmbH

Germany . 4,595 parts In-Stock

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Corphita

USA . 3,695 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,063 parts In-Stock

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Perfect Parts

USA . 560 parts In-Stock

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Assy Fe

Spain . 472 parts In-Stock

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Microchip USA

USA . 286 parts In-Stock

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Parana Technologies

USA . 223 parts In-Stock

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$2.810

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223

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$2.810

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Overview

Unlock the potential of your designs with the M29F016D70N6 from STMicroelectronics, a leader in high-quality flash memory solutions. Built for reliability and performance, this compact NOR flash memory delivers exceptional speed and efficiency for diverse applications—from automotive systems to industrial controls. Enjoy peace of mind with a robust operating range and industry-grade durability, ensuring your projects thrive in any environment. Experience unparalleled value and innovation with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for industrial applications.

Surface Mount: YES

Surface mount technology allows for high-density mounting and reduces the overall size of the circuit board.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on the PCB and can enhance thermal performance.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times, improving data transfer rates and overall system responsiveness.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of devices and easy integration.

Power Supplies (V): 5

This specification promotes versatility in power supply integration, facilitating easier application in existing designs.

No. of Terminals: 40

A higher number of terminals can allow for more complex functionality and interfacing options with other components.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile are ideal for space-constrained applications, ensuring efficient use of board space.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C makes it suitable for high-temperature environments typically found in industrial applications.

Organization: 2MX8

This organization improves memory access efficiency and enables optimal data structure management.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product is reliable for extreme conditions, further emphasizing its industrial-grade quality.

No. of Sectors/Size: 32

Having 32 sectors allows for organized data storage and efficient memory management and access.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability, ensuring strong electrical connections and durability.

Terminal Position: DUAL

Dual terminal positions facilitate adaptable circuit board designs, improving layout flexibility.

Maximum Seated Height: 1.2 mm

A low seated height contributes to a sleeker profile, enhancing compatibility with compact devices.

Width: 10 mm

Compact width allows for dense packaging on PCBs, making it ideal for space-saving applications.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V ensures wider compatibility with various systems while maintaining performance.

Type: NOR TYPE

NOR type flash memory contributes to faster read speeds and lower power consumption during idle states.

Common Flash Interface: YES

Support for a common flash interface simplifies integration with existing designs and devices.

Length: 18.4 mm

The 18.4 mm length contributes to a compact footprint, which is crucial for portable and embedded applications.

Programming Voltage (V): 5

Consistent programming voltage aids in straightforward programming processes, enhancing user experience.

Temperature Grade: INDUSTRIAL

Industrial grade components are built to ensure reliability in harsh conditions, making them ideal for critical applications.

Technology: CMOS

CMOS technology reduces power consumption and improves performance, making it suitable for portable devices.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer compared to serial options, enhancing system throughput.

Terminal Form: GULL WING

Gull wing terminals ensure ease of handling and facilitate reliable connections to the PCB.

Sector Size (Words): 64K

A larger sector size can improve performance and efficiency in data management and access.

Maximum Supply Current: 20 mA

Low supply current prolongs battery life in portable applications, adding to user convenience.

No. of Words: 2097152 words

A substantial number of words means ample storage capacity, suitable for a wide range of applications.

Toggle Bit: YES

Toggle bit feature is essential for error detection and maintaining data integrity in memory storage.

Memory Width: 8

An 8-bit memory width helps in typical byte-addressable applications, ensuring compatibility and ease of use.

Terminal Pitch: 0.5 mm

A small terminal pitch enables a compact design, suitable for high-density PCBs.

No. of Words Code: 2M

2M words capability offers significant storage for applications that require ample memory.

Command User Interface: YES

A command user interface ensures ease of programming and integration into diverse systems.

Ready or Busy: YES

Ready or busy status signals allow for synchronized operations, improving system efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

Flexibility in maximum supply voltage supports a range of applications without compromising reliability.

Memory Density: 16777216 bit

High memory density enhances storage capabilities, making it suitable for data-intensive applications.

Memory IC Type: FLASH

Flash memory is non-volatile, ensuring data retention without power, vital for many applications.

Maximum Standby Current: 0.00015 Amp

Minimal standby current consumption aids in energy efficiency, particularly important in battery-powered applications.

Maximum Access Time: 70 ns

A fast access time of 70 ns ensures quick data retrieval, which is crucial for performance-critical applications.

Data Polling: YES

Data polling feature enables efficient data retrieval and enhances the overall performance of the memory device.

Technical Specifications

Flash Memory M29F016D70N6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G40

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

32

No. of Terminals:

40

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP40,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29F016D70N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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