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M29F010B70N1

STMicroelectronics

M29F010B70N1 by STMicroelectronics

M29F010B70N1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles and comes in a compact SOIC package. Ideal for embedded applications requiring reliable data storage.

Median Price

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Lifecycle Status

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Vyrian

USA . 4,448 parts In-Stock

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Anansix

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Bristol Electronics

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Atlantic Semiconductor

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Digiode

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ComSIT Distribution GmbH

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ComSIT USA

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ACDS - Activité Composants Distribution Service

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Prism Electronics

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IDEA Electronic Components Group

UK . 560 parts In-Stock

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$2.439

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MKK Technologies

India . 227 parts In-Stock

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$5.097

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DigiPath Technology Company

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Microchip USA

USA . 179 parts In-Stock

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AZTECH Wire

Italy . 1,185 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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A-Z Elektronik GmbH

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GreenTree Electronics

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Metaverse IC Inc.

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Assy Fe

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Corphita

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Alle Elektronik GmbH

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Parana Technologies

USA . 2,176 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Unleash innovation with the M29F010B70N1 FLASH Memory from STMicroelectronics, a trusted leader in quality and reliability. Designed for seamless performance in diverse applications, this compact, high-density solution offers exceptional endurance and fast access times, perfect for consumer electronics, automotive systems, and industrial automation. Experience the advantage of superior technology backed by ST’s commitment to excellence—empowering your projects with unmatched value and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors.

Surface Mount: YES

Surface mount technology facilitates easier integration into compact designs, saving space in electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape is standard, making it compatible with a wide range of circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster data access times, improving overall performance in applications.

Nominal Supply Voltage / Vsup (V): 5

A standard supply voltage of 5V means easy compatibility with most systems and power sources.

Power Supplies (V): 5

Operating with a simple 5V supply reduces design complexity and cost.

No. of Terminals: 32

A sufficient number of terminals allows for versatile connections and enhanced functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile are ideal for space-constrained applications, particularly in modern electronics.

Maximum Operating Temperature: 70 °C

Supports a wide operating temperature range, making it suitable for various environmental conditions.

Organization: 128KX8

This organization ensures efficient data storage and retrieval, enhancing performance in application.

Minimum Operating Temperature: 0 °C

Operational capabilities start from 0 °C, making it versatile for numerous applications.

No. of Sectors/Size: 8

Having multiple sectors enhances data management and allows for efficient storage organization.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent conductivity and reliability in electrical connections.

Terminal Position: DUAL

Dual terminal positioning supports robust mounting and connection stability.

Maximum Seated Height: 1.2 mm

A low profile contributes to overall design compactness, making it easier to integrate into smaller devices.

Width: 8 mm

Compact width allows for efficient layout on PCBs, improving design flexibility.

Minimum Supply Voltage (Vsup): 4.5 V

Flexibility in operating voltage allows for use in various circuit configurations.

Type: NOR TYPE

NOR Flash is known for faster read times, making it beneficial for applications requiring quick data access.

Length: 18.4 mm

The compact length supports integration into small electronic devices without compromising performance.

Programming Voltage (V): 5

Standard programming voltage ensures compatibility with common programming devices and tools.

Temperature Grade: COMMERCIAL

Commercial temperature grading ensures stability and reliability in typical operational environments.

Technology: CMOS

CMOS technology offers low power consumption and high efficiency, suitable for battery-powered devices.

Parallel or Serial: PARALLEL

Parallel interface provides higher data transfer rates, enhancing performance in high-speed applications.

Terminal Form: GULL WING

Gull wing terminals ensure reliable solder joints and facilitate easy mounting on PCBs.

Sector Size (Words): 16K

Larger sector sizes allow for efficient data handling processes and reduced overhead in write operations.

Maximum Supply Current: 20 mA

Low supply current requirements contribute to energy efficiency, extending battery life in portable applications.

No. of Words: 131072 words

Significant memory capacity accommodates more data storage, making it suitable for complex applications.

Toggle Bit: YES

The inclusion of toggle bit functionality increases reliability in data verification and integrity.

Memory Width: 8

An 8-bit memory width strikes a balance between capacity and performance for a variety of applications.

Terminal Pitch: 0.5 mm

Fine terminal pitch supports high-density designs, ideal for modern, compact electronic devices.

No. of Words Code: 128K

Matching the memory capacity to specific needs allows for optimized data storage solutions.

Command User Interface: YES

An easy-to-use command interface simplifies integration and programming processes.

Maximum Supply Voltage (Vsup): 5.5 V

High maximum voltage tolerance allows for flexibility in power sourcing.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures long-lasting performance, making the product suitable for frequent data updates.

Memory Density: 1048576 bit

High memory density is advantageous for applications that require substantial data storage in small footprints.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage, which is critical for many electronic applications.

Maximum Standby Current: 0.0001 Amp

Low standby current contributes to energy efficiency, making it ideal for battery-operated devices.

Maximum Access Time: 70 ns

Fast access time enhances overall system performance in applications demanding rapid data retrieval.

Data Polling: YES

Data polling capability provides additional reliability by enabling validation of read operations.

Technical Specifications

Flash Memory M29F010B70N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29F010B70N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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