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M29F800DT55N1

STMicroelectronics

M29F800DT55N1 by STMicroelectronics

M29F800DT55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,145 parts In-Stock

1+ parts

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8,145

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Digiode

USA . 2,851 parts In-Stock

1+ parts

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1k+ parts

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2,851

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Anansix

USA . 1,032 parts In-Stock

1+ parts

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1,032

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,286 parts In-Stock

1+ parts

$3.633

100+ parts

-

1k+ parts

$3.270

10k+ parts

-

1,286

$3.633

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$3.270

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MKK Technologies

India . 2,214 parts In-Stock

1+ parts

$6.832

100+ parts

-

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10k+ parts

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2,214

$6.832

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DigiPath Technology Company

USA . 2,214 parts In-Stock

1+ parts

$6.832

100+ parts

-

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10k+ parts

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2,214

$6.832

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AZTECH Wire

Italy . 621 parts In-Stock

1+ parts

$17.030

100+ parts

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10k+ parts

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621

$17.030

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GreenTree Electronics

Israel . 4,032 parts In-Stock

1+ parts

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4,032

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Corphita

USA . 3,850 parts In-Stock

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3,850

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Perfect Parts

USA . 3,699 parts In-Stock

1+ parts

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3,699

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Parana Technologies

USA . 1,008 parts In-Stock

1+ parts

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100+ parts

$4.344

1k+ parts

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1,008

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$4.344

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Microchip USA

USA . 444 parts In-Stock

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444

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Overview

Unlock the potential of your projects with the M29F800DT55N1 Flash Memory from STMicroelectronics! Renowned for its reliable performance and cutting-edge technology, this high-quality NOR flash memory offers seamless integration into a variety of applications—from consumer electronics to industrial systems. With its compact design and efficient power consumption, elevate your designs while enjoying the peace of mind that comes from choosing a trusted leader in semiconductor innovation. Get ready to boost efficiency and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, enhancing reliability.

Surface Mount: YES

Surface mount technology provides a compact form factor, allowing for space-saving designs in electronic applications.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient PCB design and layout, optimizing available space.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data handling and faster response times, which can enhance system performance.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V operation is compatible with a wide range of systems, making it easier to integrate into existing designs.

Power Supplies (V): 5

Operating at a consistent power supply voltage simplifies design implementation and improves stability.

No. of Terminals: 48

A higher number of terminals provides extensive connectivity options, allowing for greater data transfer and interfacing capabilities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile contribute to compact electronic designs, allowing for slimmer devices.

Alternate Memory Width: 8

The alternate memory width supports versatile applications and data handling requirements.

Maximum Operating Temperature: 70 °C

With high-temperature tolerance, this product is suitable for diverse operating environments, enhancing its application scope.

Organization: 512KX16

The organization format optimizes data storage efficiency, enabling effective memory utilization.

Minimum Operating Temperature: 0 °C

The low minimum temperature ensures functionality in varying environmental conditions.

No. of Sectors/Size: 1,2,1,15

Flexible sector sizing allows for effective memory management and storage organization tailored to application needs.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability, enhancing assembly reliability and performance.

Terminal Position: DUAL

Dual terminal positioning facilitates various assembly methods, improving compatibility with different PCB designs.

Maximum Seated Height: 1.2 mm

A low seated height supports compact designs and preserves space on the circuit board.

Width: 12 mm

Moderate width aids in space-efficient placement on PCBs while maintaining structural integrity.

Minimum Supply Voltage (Vsup): 4.5 V

The low minimum supply voltage ensures flexibility in power supply configurations and efficiency.

Type: NOR TYPE

NOR type memory is ideal for applications requiring fast random access and reliable data retention.

Common Flash Interface: YES

Support for common flash interface standards facilitates easier integration into existing systems, reducing design complexity.

Parallel or Serial: PARALLEL

Parallel data architecture allows for faster data transfer rates and improved performance in high-speed applications.

Terminal Form: GULL WING

Gull wing terminals provide enhanced solder joint reliability, ensuring durable connections to the PCB.

Sector Size (Words): 16K,8K,32K,64K

Various sector sizes promote efficient memory management tailored to specific needs, optimizing performance.

Maximum Supply Current: 20 mA

A moderate supply current ensures efficient power consumption, crucial for battery-operated devices.

No. of Words: 524288 words

With over half a million words, this product offers substantial storage capacity for a variety of applications.

Toggle Bit: YES

Toggle bit functionality enhances the reliability of memory operations, particularly in error detection scenarios.

Memory Width: 16

The 16-bit memory width is suitable for applications requiring significant data throughput.

Terminal Pitch: 0.5 mm

Close terminal pitch supports higher density designs, maximizing PCB space utilization.

No. of Words Code: 512K

A capacity of 512K words provides expanded storage options for complex applications.

Command User Interface: YES

User-friendly command interface simplifies interaction with the memory device, facilitating easier integration.

Ready or Busy: YES

The ready/busy feature provides real-time status updates, ensuring improved error handling and efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a range of supply voltages enhances versatility across different application environments.

Boot Block: TOP

Top boot block configuration enhances security and allows for efficient system recovery in critical applications.

Memory Density: 8388608 bit

High memory density makes this product suitable for applications requiring substantial data storage.

Memory IC Type: FLASH

Flash memory technology provides fast erase and write cycles, making it ideal for dynamic storage needs.

Maximum Standby Current: 0.00015 Amp

Very low standby current ensures energy efficiency, vital for battery-powered devices.

Maximum Access Time: 55 ns

Fast access time boosts overall system performance, allowing quicker data retrieval.

Data Polling: YES

Data polling capability enhances the memory's reliability by monitoring operational status effectively.

Technical Specifications

Flash Memory M29F800DT55N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DT55N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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