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M29F800DT70N6E

STMicroelectronics

M29F800DT70N6E by STMicroelectronics

M29F800DT70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and is ideal for industrial applications requiring reliable data storage.

Median Price

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Lifecycle Status

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7

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1k+

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Chip Stock

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Vyrian

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Digiode

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Zilex Electronics Inc.

Canada . 244 parts In-Stock

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Bristol Electronics

USA . 171 parts In-Stock

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Atlantic Semiconductor

USA . 171 parts In-Stock

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Anansix

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IDEA Electronic Components Group

UK . 2,276 parts In-Stock

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$5.220

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$4.698

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MKK Technologies

India . 997 parts In-Stock

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$9.816

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DigiPath Technology Company

USA . 997 parts In-Stock

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AZTECH Wire

Italy . 266 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,444 parts In-Stock

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Corphita

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Parana Technologies

USA . 1,556 parts In-Stock

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Microchip USA

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Kepictronics

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Overview

Unlock the potential of your projects with the M29F800DT70N6E flash memory from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance NOR flash delivers unmatched reliability and efficiency, perfect for a variety of applications from automotive to industrial sectors. Its superior temperature range ensures robust operation in demanding environments, while its compact design facilitates seamless integration. Elevate your designs with quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection against environmental factors, ensuring longevity and reliability.

Surface Mount: YES

Surface mount technology allows for higher density mounting on PCBs, making it ideal for modern compact devices.

Package Shape: RECTANGULAR

A rectangular package shape enables efficient space utilization on printed circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous mode enables faster data access, improving overall system performance.

Nominal Supply Voltage / Vsup: 5V

Operating at a standard 5V supply voltage makes this product compatible with a wide range of electronic systems.

Power Supplies (V): 5

Consistent power supply requirements simplify integration into existing systems.

No. of Terminals: 48

A higher number of terminals allows for more functional interfaces and increases versatility in application.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

A small outline and thin profile makes it suitable for space-constrained designs, particularly in portable devices.

Alternate Memory Width: 8

Flexible memory width configuration aids in meeting specific application requirements.

Maximum Operating Temperature: 85 °C

High maximum operating temperature makes this product suitable for industrial applications where temperature extremes may occur.

Organization: 512KX16

The 512Kx16 organization provides a balanced configuration for data storage and retrieval, ensuring efficiency.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures makes this flash memory ideal for environments with extreme cooling needs.

No. of Sectors/Size: 1,2,1,15

Flexible sector sizing enhances the memory's adaptability for different usage scenarios.

Terminal Finish: TIN BISMUTH

This terminal finish provides excellent solderability and corrosion resistance, ensuring better connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options, improving design flexibility.

Maximum Seated Height: 1.2 mm

Compact seated height contributes to a low-profile design, aiding in space-saving applications.

Width: 12 mm

A width of 12 mm allows for compatibility in a variety of devices without unnecessary bulk.

Minimum Supply Voltage (Vsup): 4.5V

Lower voltage operation minimizes power consumption, enhancing energy efficiency.

Peak Reflow Temperature: 260 °C

A high reflow temperature tolerance facilitates compatibility with modern assembly processes.

Type: NOR TYPE

NOR-type flash memory is known for faster read speeds and efficient random access, making it suitable for code execution.

Common Flash Interface: YES

Support for common flash interfaces simplifies integration and promotes design standardization.

Length: 18.4 mm

A length of 18.4 mm strikes a balance between compactness and functionality.

Programming Voltage (V): 5

Standard programming voltage makes this memory easy to integrate with existing systems without needing additional voltage regulation.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures reliability in demanding conditions, suitable for critical applications.

Technology: CMOS

CMOS technology provides low power consumption and high efficiency, enhancing device performance.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfer rates, optimizing the memory's performance in high-speed applications.

Terminal Form: GULL WING

Gull wing terminals provide a stable mounting option and facilitate better solder joint quality.

Sector Size (Words): 16K, 8K, 32K, 64K

Varied sector sizes support different use cases, enhancing the flexibility of memory management.

Maximum Supply Current: 20 mA

Low maximum supply current improves the overall power efficiency of the system.

No. of Words: 524288 words

A substantial number of words enhances data storage capabilities, suitable for expansive applications.

Toggle Bit: YES

Toggle bit capability aids in data integrity checks and ensures reliable memory operation.

Memory Width: 16

A memory width of 16 bits allows for good data throughput, balancing performance and resource use.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for compact PCB designs while ensuring reliable connections.

No. of Words Code: 512K

With a coding capacity of 512K words, this memory is well-suited for various applications requiring significant data storage.

Command User Interface: YES

A command user interface simplifies user commands, enhancing the ease of integrating and using the flash memory.

Ready or Busy: YES

The ready/busy signal provides feedback on the memory's operational state, aiding in system management.

Maximum Supply Voltage (Vsup): 5.5V

Higher maximum voltage capacity provides design flexibility and ensures robustness against voltage spikes.

Boot Block: TOP

A top boot block configuration enables efficient booting processes, enhancing start-up speeds.

Memory Density: 8388608 bit

High memory density allows for extensive data storage, making it suitable for applications with large data requirements.

Memory IC Type: FLASH

As a flash memory IC, it offers non-volatile data storage, ensuring retention of data even without power.

Maximum Standby Current: 0.00015 Amp

Very low standby current enhances power efficiency, making it a great choice for battery-operated devices.

Maximum Access Time: 70 ns

Fast access time improves system performance by reducing latency in data retrieval.

Data Polling: YES

Data polling feature allows for real-time monitoring of the memory status, aiding in system reliability.

Technical Specifications

Flash Memory M29F800DT70N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e6

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DT70N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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