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M29F800DT55N6

STMicroelectronics

M29F800DT55N6 by STMicroelectronics

M29F800DT55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal configuration in a thin SO package, suitable for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in diverse environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,140 parts In-Stock

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Vyrian

USA . 2,100 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 361 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 277 parts In-Stock

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Anansix

USA . 115 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 110 parts In-Stock

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IDEA Electronic Components Group

UK . 720 parts In-Stock

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$3.198

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$2.878

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720

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$2.878

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MKK Technologies

India . 1,135 parts In-Stock

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$6.013

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$6.013

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DigiPath Technology Company

USA . 1,135 parts In-Stock

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$6.013

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$6.013

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AZTECH Wire

Italy . 746 parts In-Stock

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$13.030

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Component Stockers USA

USA . 484 parts In-Stock

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$99.990

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Corphita

USA . 3,933 parts In-Stock

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Parana Technologies

USA . 481 parts In-Stock

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$3.824

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Microchip USA

USA . 481 parts In-Stock

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Assy Fe

Spain . 5 parts In-Stock

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Overview

Elevate your designs with the M29F800DT55N6 from STMicroelectronics, a leader in high-quality flash memory solutions. This asynchronous NOR FLASH memory combines exceptional reliability and performance for a wide range of applications, from consumer electronics to industrial systems. With its robust temperature tolerance and compact form factor, it ensures seamless integration and durability. Choose STMicroelectronics for innovative technology that empowers your projects with efficiency and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures high reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for efficient utilization of PCB space, making it ideal for compact designs.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier installation and integration into various electronic designs.

Operating Mode: ASYNCHRONOUS

This operating mode enables faster data access and processing, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V allows compatibility with a wide range of equipment and simplifies power management.

Power Supplies (V): 5

Standard power supply requirement makes it easy to integrate into existing systems without additional voltage regulators.

No. of Terminals: 48

Having 48 terminals allows for extensive connectivity options, supporting various applications and configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The thin profile makes it suitable for space-constrained applications, such as portable devices.

Alternate Memory Width: 8

An alternate memory width provides flexibility in data handling and compatibility with different system architectures.

Maximum Operating Temperature: 85 °C

Designed to operate at high temperatures, making it suitable for industrial applications in harsh environments.

Organization: 512KX16

Optimized memory organization enhances data retrieval efficiency for complex applications.

Minimum Operating Temperature: -40 °C

Ability to function in extreme cold temperatures is perfect for outdoor or industrial environments.

No. of Sectors/Size: 1,2,1,15

Flexible sector sizing allows for efficient data management and optimized performance in varying application scenarios.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent solderability and reliability in connections.

Terminal Position: DUAL

Dual terminal positioning supports better integration and mounting options on the PCB.

Maximum Seated Height: 1.2 mm

Low profile design minimizes space usage while maintaining performance.

Width: 12 mm

Compact width allows for designs with limited space without sacrificing functionality.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V ensures compatibility with lower voltage systems.

Type: NOR TYPE

NOR type flash memory provides fast read access times and efficient code execution for embedded systems.

Common Flash Interface: YES

Integration with common flash interfaces enhances compatibility and ease of integration into existing systems.

Length: 18.4 mm

Compact length allows for versatile placement within various electronic designs.

Programming Voltage (V): 5

A programming voltage of 5V ensures reliable programming cycles and is suitable for most systems.

Temperature Grade: INDUSTRIAL

Industrial temperature grade guarantees performance reliability in rugged environments.

Technology: CMOS

CMOS technology provides low power consumption and high efficiency, making it ideal for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel communication enables faster data transfers, benefiting high-performance applications.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections and easy soldering to PCBs.

Sector Size (Words): 16K,8K,32K,64K

Variable sector size enhances program and erase flexibility, improving memory management.

Maximum Supply Current: 20 mA

Low maximum supply current results in energy-efficient operation, making it suitable for low-power designs.

No. of Words: 524288 words

A substantial number of words offers significant data storage capacity for various applications.

Toggle Bit: YES

Toggle bit functionality allows for efficient program and erase status checking, improving the development process.

Memory Width: 16

A memory width of 16 facilitates efficient data handling and transfers, enhancing performance.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high-density mounting on PCBs, perfect for compact electronic designs.

No. of Words Code: 512K

The 512K word code supports a wide range of applications, from consumer electronics to industrial systems.

Command User Interface: YES

A command user interface simplifies programming and control of the memory device, improving user experience.

Ready or Busy: YES

Ready/busy indication allows for better management of data operations, ensuring data integrity during transactions.

Maximum Supply Voltage (Vsup): 5.5 V

Support for a maximum supply voltage of 5.5V provides flexibility in powering options for diverse applications.

Boot Block: TOP

Top boot block configuration facilitates easier access for booting applications, enhancing system design efficiency.

Memory Density: 8388608 bit

A high memory density offers ample storage space for data-intensive applications and firmware.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage, perfect for applications requiring data retention after power loss.

Maximum Standby Current: 0.00015 Amp

Very low standby current ensures minimal power consumption during idle periods, maximizing battery life.

Maximum Access Time: 55 ns

Fast access time allows for quick data read/write operations, enhancing overall system performance.

Data Polling: YES

Data polling capability allows for efficient data retrieval and management, streamlining operations.

Technical Specifications

Flash Memory M29F800DT55N6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Additional Features:

TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DT55N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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