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M29W040B90K1

STMicroelectronics

M29W040B90K1 by STMicroelectronics

M29W040B90K1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles and operates in temperatures from 0 °C to 70 °C. Ideal for embedded applications, it offers reliable data storage in compact designs.

Median Price

$5.230

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 964 parts In-Stock

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$5.230

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964

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DF Sales Co.

USA . 964 parts In-Stock

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$5.230

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964

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Anansix

USA . 2,872 parts In-Stock

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Vyrian

USA . 2,216 parts In-Stock

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Digiode

USA . 1,393 parts In-Stock

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LWI Electronics Inc

India . 679 parts In-Stock

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J2 Sourcing AB

Sweden . 534 parts In-Stock

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534

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Tectiva GmbH

Germany . 353 parts In-Stock

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ComSIT Distribution GmbH

Germany . 274 parts In-Stock

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Prism Electronics

USA . 60 parts In-Stock

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Sunrise Surplus Inc.

USA . 58 parts In-Stock

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Electronics Depot

USA . 42 parts In-Stock

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R&J Components

USA . 39 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 32 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 23 parts In-Stock

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Atlantic Semiconductor

USA . 17 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12 parts In-Stock

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North Shore Components

USA . 2 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 523 parts In-Stock

1+ parts

$3.076

100+ parts

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$2.768

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523

$3.076

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$2.768

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MKK Technologies

India . 2,339 parts In-Stock

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$5.783

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$5.783

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DigiPath Technology Company

USA . 2,339 parts In-Stock

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$5.783

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$5.783

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AZTECH Wire

Italy . 744 parts In-Stock

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$16.550

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744

$16.550

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Microchip USA

USA . 456 parts In-Stock

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$31.074

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456

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A-Z Elektronik GmbH

Germany . 13,244 parts In-Stock

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Alle Elektronik GmbH

Germany . 8,829 parts In-Stock

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Assy Fe

Spain . 5,400 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Parana Technologies

USA . 2,044 parts In-Stock

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$3.677

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Infinite Electronics LLP (Excess)

. 1,977 parts In-Stock

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Kepictronics

USA . 900 parts In-Stock

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900

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Corphita

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Perfect Parts

USA . 52 parts In-Stock

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Overview

Elevate your projects with the M29W040B90K1 from STMicroelectronics, a trusted leader in innovative memory solutions. This high-performance Flash Memory delivers unparalleled reliability and efficiency, perfect for a range of applications from consumer electronics to industrial automation. Experience exceptional endurance and swift access times that empower your designs while minimizing power consumption—unlocking value and performance without compromise. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable construction ensures reliable performance and protection from environmental factors.

Surface Mount: YES

Facilitates compact design and easy integration onto PCBs, saving space in applications.

Package Shape: RECTANGULAR

Standard shape for efficient use of space in various electronic devices.

Operating Mode: ASYNCHRONOUS

Allows for faster and more flexible data access and control.

Nominal Supply Voltage / Vsup: 3.3 V

Optimized for low power consumption, making it suitable for battery-operated devices.

Power Supplies (V): 3/3.3

Flexible power supply options enhance compatibility across different systems.

No. of Terminals: 32

Provides sufficient connectivity for various applications while maintaining compactness.

Package Style: CHIP CARRIER

Designed for efficient heat dissipation and reliability in performance.

Maximum Operating Temperature: 70 °C

Suitable for a wide range of operating environments, ensuring reliability in varied conditions.

Organization: 512KX8

Offers a balanced memory structure for efficient data storage and management.

Minimum Operating Temperature: 0 °C

Ensures functionality in standard room conditions, broadening its application scope.

No. of Sectors/Size: 8

Facilitates organized data management and efficient memory allocation.

Terminal Finish: TIN LEAD

Provides reliable electrical connections and solderability for manufacturing.

Terminal Position: QUAD

Enables high-density functional layouts while maintaining electrical integrity.

Maximum Seated Height: 3.56 mm

Low profile design aids in space-constrained applications.

Width: 11.43 mm

Compact width suitable for a variety of electronic devices and systems.

Minimum Supply Voltage (Vsup): 2.7 V

Flexibility in power requirements enhances compatibility with different electrical systems.

Type: NOR TYPE

Offers fast random access and efficient data retrieval, ideal for code execution.

Length: 13.97 mm

Standard length facilitates interchangeable use in various applications.

Programming Voltage (V): 2.7

Ensures reliable data programming and retention, crucial for performance.

Temperature Grade: COMMERCIAL

Designed for use in commercial applications where temperature control is important.

Technology: CMOS

Offers low power consumption and high performance, suitable for modern electronics.

Parallel or Serial: PARALLEL

Supports high-speed data transfer, improving overall system performance.

Terminal Form: J BEND

Enhanced mounting stability on PCB enhances reliability and performance.

Sector Size (Words): 64K

Aids in efficient data organization and management for applications.

Maximum Supply Current: 20 mA

Ensures low power consumption, making it suitable for power-sensitive applications.

No. of Words: 524288 words

Provides ample storage capacity for various data-intensive applications.

Toggle Bit: YES

Enables error detection, improving data integrity during operations.

Memory Width: 8

Standard data width for compatibility with most systems and ease of integration.

Terminal Pitch: 1.27 mm

Standardized pitch ensures compatibility with various PCB designs.

No. of Words Code: 512K

Reflects the product's adequate capacity and organization for data storage.

Command User Interface: YES

User-friendly interface simplifies interaction and programming of the memory device.

Maximum Supply Voltage (Vsup): 3.6 V

Allows a broad operational range for diverse applications.

Endurance: 100000 Write/Erase Cycles

Provides long-term reliability for firmware or data storage applications.

Memory Density: 4194304 bit

High density suitable for advanced applications requiring larger storage capacities.

Memory IC Type: FLASH

Flash memory technology supports reprogrammability, making it versatile for various applications.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current conserves battery life in portable devices.

Maximum Access Time: 90 ns

Fast access time enhances system responsiveness and performance.

Data Polling: YES

Allows for real-time status checking during memory operations, improving reliability.

Technical Specifications

Flash Memory M29W040B90K1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

90 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e0

Length:

13.97 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29W040B90K1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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